Thermoelasticity in Ge due to nonuniform distribution of doping impurity studied by light polarization modulation technique
Volume-gradient photovoltage and birefrigence caused by a difference of main mechanical stress components have been studied in the Ge-monocrystal with step-like distribution of the doping impurity concentration, N. The qualitative agreement between the function obtained by integration of the spatial...
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| Дата: | 1999 |
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| Автори: | , , |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
1999
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| Назва видання: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/117956 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Thermoelasticity in Ge due to nonuniform distribution of doping impurity studied by light polarization modulation technique / B.K. Serdega, Ye.F. Venger, Ye.V. Nikitenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 1999. — Т. 2, № 1. — С. 153-156. — Бібліогр.: 7 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
irk-123456789-117956 |
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dspace |
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irk-123456789-1179562017-05-28T03:04:36Z Thermoelasticity in Ge due to nonuniform distribution of doping impurity studied by light polarization modulation technique Serdega, B.K. Venger, Ye.F. Nikitenko, Ye.V. Volume-gradient photovoltage and birefrigence caused by a difference of main mechanical stress components have been studied in the Ge-monocrystal with step-like distribution of the doping impurity concentration, N. The qualitative agreement between the function obtained by integration of the spatial dependence of the anisotropy and of the coordinate dependence of the photovoltage was observed. Using this fact, the conclusion is made that the features of thermoelastic mechanical stress can be distribution of expressed by the dependence |σz - σy| ~ d²N/dz². Remove selected 1999 Article Thermoelasticity in Ge due to nonuniform distribution of doping impurity studied by light polarization modulation technique / B.K. Serdega, Ye.F. Venger, Ye.V. Nikitenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 1999. — Т. 2, № 1. — С. 153-156. — Бібліогр.: 7 назв. — англ. 1560-8034 PACS 61.72 http://dspace.nbuv.gov.ua/handle/123456789/117956 535.3 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| language |
English |
| description |
Volume-gradient photovoltage and birefrigence caused by a difference of main mechanical stress components have been studied in the Ge-monocrystal with step-like distribution of the doping impurity concentration, N. The qualitative agreement between the function obtained by integration of the spatial dependence of the anisotropy and of the coordinate dependence of the photovoltage was observed. Using this fact, the conclusion is made that the features of thermoelastic mechanical stress can be distribution of expressed by the dependence |σz - σy| ~ d²N/dz².
Remove selected |
| format |
Article |
| author |
Serdega, B.K. Venger, Ye.F. Nikitenko, Ye.V. |
| spellingShingle |
Serdega, B.K. Venger, Ye.F. Nikitenko, Ye.V. Thermoelasticity in Ge due to nonuniform distribution of doping impurity studied by light polarization modulation technique Semiconductor Physics Quantum Electronics & Optoelectronics |
| author_facet |
Serdega, B.K. Venger, Ye.F. Nikitenko, Ye.V. |
| author_sort |
Serdega, B.K. |
| title |
Thermoelasticity in Ge due to nonuniform distribution of doping impurity studied by light polarization modulation technique |
| title_short |
Thermoelasticity in Ge due to nonuniform distribution of doping impurity studied by light polarization modulation technique |
| title_full |
Thermoelasticity in Ge due to nonuniform distribution of doping impurity studied by light polarization modulation technique |
| title_fullStr |
Thermoelasticity in Ge due to nonuniform distribution of doping impurity studied by light polarization modulation technique |
| title_full_unstemmed |
Thermoelasticity in Ge due to nonuniform distribution of doping impurity studied by light polarization modulation technique |
| title_sort |
thermoelasticity in ge due to nonuniform distribution of doping impurity studied by light polarization modulation technique |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| publishDate |
1999 |
| url |
http://dspace.nbuv.gov.ua/handle/123456789/117956 |
| citation_txt |
Thermoelasticity in Ge due to nonuniform distribution of doping impurity studied by light polarization modulation technique / B.K. Serdega, Ye.F. Venger, Ye.V. Nikitenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 1999. — Т. 2, № 1. — С. 153-156. — Бібліогр.: 7 назв. — англ. |
| series |
Semiconductor Physics Quantum Electronics & Optoelectronics |
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2023-10-18T20:30:59Z |
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2023-10-18T20:30:59Z |
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