Charge carrier generation in photosensitive amorphous molecular semiconductors
Thermalization process in photosensitive amorphous molecular semiconductors are theoretically considered from the standpoint of their parameters, namely: thermalization time, thermalization length. The heat electron formed in consequence of absorption of the light quantum by semiconductor molecules...
Збережено в:
| Дата: | 2003 |
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| Автор: | |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2003
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| Назва видання: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/117974 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Charge carrier generation in photosensitive amorphous molecular semiconductors / M.A. Zabolotny // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 1. — С. 102-104. — Бібліогр.: 8 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| Резюме: | Thermalization process in photosensitive amorphous molecular semiconductors are theoretically considered from the standpoint of their parameters, namely: thermalization time, thermalization length. The heat electron formed in consequence of absorption of the light quantum by semiconductor molecules loses his surplus energy in the course of inelastic interaction with neighbouring atoms. The results of theoretical predictions are confirmed by the experimental ones obtained for a number of molecular semiconductors (anthracene, pentacene, PVC, PEPC). |
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