Charge carrier generation in photosensitive amorphous molecular semiconductors
Thermalization process in photosensitive amorphous molecular semiconductors are theoretically considered from the standpoint of their parameters, namely: thermalization time, thermalization length. The heat electron formed in consequence of absorption of the light quantum by semiconductor molecules...
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| Дата: | 2003 |
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| Автор: | |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2003
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| Назва видання: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/117974 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Charge carrier generation in photosensitive amorphous molecular semiconductors / M.A. Zabolotny // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 1. — С. 102-104. — Бібліогр.: 8 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
irk-123456789-117974 |
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dspace |
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irk-123456789-1179742017-05-28T03:05:17Z Charge carrier generation in photosensitive amorphous molecular semiconductors Zabolotny, M.A. Thermalization process in photosensitive amorphous molecular semiconductors are theoretically considered from the standpoint of their parameters, namely: thermalization time, thermalization length. The heat electron formed in consequence of absorption of the light quantum by semiconductor molecules loses his surplus energy in the course of inelastic interaction with neighbouring atoms. The results of theoretical predictions are confirmed by the experimental ones obtained for a number of molecular semiconductors (anthracene, pentacene, PVC, PEPC). 2003 Article Charge carrier generation in photosensitive amorphous molecular semiconductors / M.A. Zabolotny // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 1. — С. 102-104. — Бібліогр.: 8 назв. — англ. 1560-8034 PACS: 71.35, 72.40, 72.80.1 http://dspace.nbuv.gov.ua/handle/123456789/117974 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| language |
English |
| description |
Thermalization process in photosensitive amorphous molecular semiconductors are theoretically considered from the standpoint of their parameters, namely: thermalization time, thermalization length. The heat electron formed in consequence of absorption of the light quantum by semiconductor molecules loses his surplus energy in the course of inelastic interaction with neighbouring atoms. The results of theoretical predictions are confirmed by the experimental ones obtained for a number of molecular semiconductors (anthracene, pentacene, PVC, PEPC). |
| format |
Article |
| author |
Zabolotny, M.A. |
| spellingShingle |
Zabolotny, M.A. Charge carrier generation in photosensitive amorphous molecular semiconductors Semiconductor Physics Quantum Electronics & Optoelectronics |
| author_facet |
Zabolotny, M.A. |
| author_sort |
Zabolotny, M.A. |
| title |
Charge carrier generation in photosensitive amorphous molecular semiconductors |
| title_short |
Charge carrier generation in photosensitive amorphous molecular semiconductors |
| title_full |
Charge carrier generation in photosensitive amorphous molecular semiconductors |
| title_fullStr |
Charge carrier generation in photosensitive amorphous molecular semiconductors |
| title_full_unstemmed |
Charge carrier generation in photosensitive amorphous molecular semiconductors |
| title_sort |
charge carrier generation in photosensitive amorphous molecular semiconductors |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| publishDate |
2003 |
| url |
http://dspace.nbuv.gov.ua/handle/123456789/117974 |
| citation_txt |
Charge carrier generation in photosensitive amorphous molecular semiconductors / M.A. Zabolotny // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 1. — С. 102-104. — Бібліогр.: 8 назв. — англ. |
| series |
Semiconductor Physics Quantum Electronics & Optoelectronics |
| work_keys_str_mv |
AT zabolotnyma chargecarriergenerationinphotosensitiveamorphousmolecularsemiconductors |
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2023-10-18T20:31:02Z |
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2023-10-18T20:31:02Z |
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1796150406605176832 |