Analysis of luminescence method applicability for determination of Cd₁₋xZnxTe composition
Physical fundamentals are analyzed for the method of determination of Cd₁₋xZnxTe composition x from measurements of the luminescence band peak position, emission being caused by annihilation of bound exciton - shallow neutral acceptor complexes at 4.2 K. Found are the conditions when application of...
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| Дата: | 2003 |
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| Автори: | , , |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2003
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| Назва видання: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/117989 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Analysis of luminescence method applicability for determination of Cd₁₋xZnxTe composition / K.D. Glinchuk, N.M. Litovchenko, O.N. Strilchuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 2. — С. 121-128. — Бібліогр.: 34 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
irk-123456789-117989 |
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irk-123456789-1179892017-05-28T03:04:57Z Analysis of luminescence method applicability for determination of Cd₁₋xZnxTe composition Glinchuk, K.D. Litovchenko, N.M. Strilchuk, O.N. Physical fundamentals are analyzed for the method of determination of Cd₁₋xZnxTe composition x from measurements of the luminescence band peak position, emission being caused by annihilation of bound exciton - shallow neutral acceptor complexes at 4.2 K. Found are the conditions when application of the method discussed enables to obtain reliable x values. 2003 Article Analysis of luminescence method applicability for determination of Cd₁₋xZnxTe composition / K.D. Glinchuk, N.M. Litovchenko, O.N. Strilchuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 2. — С. 121-128. — Бібліогр.: 34 назв. — англ. 1560-8034 PACS: 78.55. - m; 78.55. Et http://dspace.nbuv.gov.ua/handle/123456789/117989 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| language |
English |
| description |
Physical fundamentals are analyzed for the method of determination of Cd₁₋xZnxTe composition x from measurements of the luminescence band peak position, emission being caused by annihilation of bound exciton - shallow neutral acceptor complexes at 4.2 K. Found are the conditions when application of the method discussed enables to obtain reliable x values. |
| format |
Article |
| author |
Glinchuk, K.D. Litovchenko, N.M. Strilchuk, O.N. |
| spellingShingle |
Glinchuk, K.D. Litovchenko, N.M. Strilchuk, O.N. Analysis of luminescence method applicability for determination of Cd₁₋xZnxTe composition Semiconductor Physics Quantum Electronics & Optoelectronics |
| author_facet |
Glinchuk, K.D. Litovchenko, N.M. Strilchuk, O.N. |
| author_sort |
Glinchuk, K.D. |
| title |
Analysis of luminescence method applicability for determination of Cd₁₋xZnxTe composition |
| title_short |
Analysis of luminescence method applicability for determination of Cd₁₋xZnxTe composition |
| title_full |
Analysis of luminescence method applicability for determination of Cd₁₋xZnxTe composition |
| title_fullStr |
Analysis of luminescence method applicability for determination of Cd₁₋xZnxTe composition |
| title_full_unstemmed |
Analysis of luminescence method applicability for determination of Cd₁₋xZnxTe composition |
| title_sort |
analysis of luminescence method applicability for determination of cd₁₋xznxte composition |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| publishDate |
2003 |
| url |
http://dspace.nbuv.gov.ua/handle/123456789/117989 |
| citation_txt |
Analysis of luminescence method applicability for determination of Cd₁₋xZnxTe composition / K.D. Glinchuk, N.M. Litovchenko, O.N. Strilchuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 2. — С. 121-128. — Бібліогр.: 34 назв. — англ. |
| series |
Semiconductor Physics Quantum Electronics & Optoelectronics |
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2023-10-18T20:31:04Z |
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