Evolution of defective structure of the irradiated silicon during natural ageing
The defective structure of silicon single crystals grown by Chochralski method (Cz-Si) before and after an irradiation by high-energy electrons and gamma beams (E ~ 18 MeV) have been studied by the X-rey acoustic resonance method (XAR) and the method of low-frequency internal friction (LFIF). It is...
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| Дата: | 2003 |
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| Автори: | , , , , |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2003
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| Назва видання: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/117998 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Evolution of defective structure of the irradiated silicon during natural ageing / I.M. Fodchuk, T.G. Gutsulyak, O.G. Himchynsky, A.V. Olijnich-Lysjuk, N.D. Raransky // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 2. — С. 147-152. — Бібліогр.: 8 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
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irk-123456789-1179982017-05-28T03:05:35Z Evolution of defective structure of the irradiated silicon during natural ageing Fodchuk, I.M. Gutsulyak, T.G. Himchynsky, O.G. Olijnich-Lysjuk, A.V. Raransky, N.D. The defective structure of silicon single crystals grown by Chochralski method (Cz-Si) before and after an irradiation by high-energy electrons and gamma beams (E ~ 18 MeV) have been studied by the X-rey acoustic resonance method (XAR) and the method of low-frequency internal friction (LFIF). It is shown the basic types of defects that created after irradiation, have the dislocation nature. But their stability is different. It is also shown that in Cz-Si at room temperature (more 10000 hours) the relaxation of radiation defects in the ageing process occurs on the background of disintegration of oxygen oversaturated solid solution in silicon accompanying with occurrence of essential internal tensions. 2003 Article Evolution of defective structure of the irradiated silicon during natural ageing / I.M. Fodchuk, T.G. Gutsulyak, O.G. Himchynsky, A.V. Olijnich-Lysjuk, N.D. Raransky // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 2. — С. 147-152. — Бібліогр.: 8 назв. — англ. 1560-8034 PACS: 61.72.-y, 61.72.Dd http://dspace.nbuv.gov.ua/handle/123456789/117998 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| language |
English |
| description |
The defective structure of silicon single crystals grown by Chochralski method (Cz-Si) before and after an irradiation by high-energy electrons and gamma beams (E ~ 18 MeV) have been studied by the X-rey acoustic resonance method (XAR) and the method of low-frequency internal friction (LFIF). It is shown the basic types of defects that created after irradiation, have the dislocation nature. But their stability is different. It is also shown that in Cz-Si at room temperature (more 10000 hours) the relaxation of radiation defects in the ageing process occurs on the background of disintegration of oxygen oversaturated solid solution in silicon accompanying with occurrence of essential internal tensions. |
| format |
Article |
| author |
Fodchuk, I.M. Gutsulyak, T.G. Himchynsky, O.G. Olijnich-Lysjuk, A.V. Raransky, N.D. |
| spellingShingle |
Fodchuk, I.M. Gutsulyak, T.G. Himchynsky, O.G. Olijnich-Lysjuk, A.V. Raransky, N.D. Evolution of defective structure of the irradiated silicon during natural ageing Semiconductor Physics Quantum Electronics & Optoelectronics |
| author_facet |
Fodchuk, I.M. Gutsulyak, T.G. Himchynsky, O.G. Olijnich-Lysjuk, A.V. Raransky, N.D. |
| author_sort |
Fodchuk, I.M. |
| title |
Evolution of defective structure of the irradiated silicon during natural ageing |
| title_short |
Evolution of defective structure of the irradiated silicon during natural ageing |
| title_full |
Evolution of defective structure of the irradiated silicon during natural ageing |
| title_fullStr |
Evolution of defective structure of the irradiated silicon during natural ageing |
| title_full_unstemmed |
Evolution of defective structure of the irradiated silicon during natural ageing |
| title_sort |
evolution of defective structure of the irradiated silicon during natural ageing |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| publishDate |
2003 |
| url |
http://dspace.nbuv.gov.ua/handle/123456789/117998 |
| citation_txt |
Evolution of defective structure of the irradiated silicon during natural ageing / I.M. Fodchuk, T.G. Gutsulyak, O.G. Himchynsky, A.V. Olijnich-Lysjuk, N.D. Raransky // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 2. — С. 147-152. — Бібліогр.: 8 назв. — англ. |
| series |
Semiconductor Physics Quantum Electronics & Optoelectronics |
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