Enhancement of CdSSe QD exciton luminescence efficiency by hydrogen RF plasma treatment

We report an enhancement of exciton luminescence in CdSxSe₁₋x QD embedded into borosilicate glass matrix and then treated by the low-temperature hydrogen RF plasma. Results clearly confirm the essential crushing of the surface levels that have a high nonradiative recombination efficiency.

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Бібліографічні деталі
Дата:2003
Автори: Kunets, V.P., Kulish, N.R., Strelchuk, V.V., Nazarov, A.N., Tkachenko, A.S., Lysenko, V.S., Lisitsa, M.P.
Формат: Стаття
Мова:English
Опубліковано: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2003
Назва видання:Semiconductor Physics Quantum Electronics & Optoelectronics
Онлайн доступ:http://dspace.nbuv.gov.ua/handle/123456789/118011
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Назва журналу:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Цитувати:Enhancement of CdSSe QD exciton luminescence efficiency by hydrogen RF plasma treatment / V.P. Kunets, N.R. Kulish, V.V. Strelchuk, A.N. Nazarov, A.S. Tkachenko, V.S. Lysenko, M.P. Lisitsa // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 2. — С. 169-171. — Бібліогр.: 13 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine
id irk-123456789-118011
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spelling irk-123456789-1180112017-05-29T03:05:41Z Enhancement of CdSSe QD exciton luminescence efficiency by hydrogen RF plasma treatment Kunets, V.P. Kulish, N.R. Strelchuk, V.V. Nazarov, A.N. Tkachenko, A.S. Lysenko, V.S. Lisitsa, M.P. We report an enhancement of exciton luminescence in CdSxSe₁₋x QD embedded into borosilicate glass matrix and then treated by the low-temperature hydrogen RF plasma. Results clearly confirm the essential crushing of the surface levels that have a high nonradiative recombination efficiency. 2003 Article Enhancement of CdSSe QD exciton luminescence efficiency by hydrogen RF plasma treatment / V.P. Kunets, N.R. Kulish, V.V. Strelchuk, A.N. Nazarov, A.S. Tkachenko, V.S. Lysenko, M.P. Lisitsa // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 2. — С. 169-171. — Бібліогр.: 13 назв. — англ. 1560-8034 PACS: 78.55.Et; 78.67.Hc; 71.55.Gs http://dspace.nbuv.gov.ua/handle/123456789/118011 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
institution Digital Library of Periodicals of National Academy of Sciences of Ukraine
collection DSpace DC
language English
description We report an enhancement of exciton luminescence in CdSxSe₁₋x QD embedded into borosilicate glass matrix and then treated by the low-temperature hydrogen RF plasma. Results clearly confirm the essential crushing of the surface levels that have a high nonradiative recombination efficiency.
format Article
author Kunets, V.P.
Kulish, N.R.
Strelchuk, V.V.
Nazarov, A.N.
Tkachenko, A.S.
Lysenko, V.S.
Lisitsa, M.P.
spellingShingle Kunets, V.P.
Kulish, N.R.
Strelchuk, V.V.
Nazarov, A.N.
Tkachenko, A.S.
Lysenko, V.S.
Lisitsa, M.P.
Enhancement of CdSSe QD exciton luminescence efficiency by hydrogen RF plasma treatment
Semiconductor Physics Quantum Electronics & Optoelectronics
author_facet Kunets, V.P.
Kulish, N.R.
Strelchuk, V.V.
Nazarov, A.N.
Tkachenko, A.S.
Lysenko, V.S.
Lisitsa, M.P.
author_sort Kunets, V.P.
title Enhancement of CdSSe QD exciton luminescence efficiency by hydrogen RF plasma treatment
title_short Enhancement of CdSSe QD exciton luminescence efficiency by hydrogen RF plasma treatment
title_full Enhancement of CdSSe QD exciton luminescence efficiency by hydrogen RF plasma treatment
title_fullStr Enhancement of CdSSe QD exciton luminescence efficiency by hydrogen RF plasma treatment
title_full_unstemmed Enhancement of CdSSe QD exciton luminescence efficiency by hydrogen RF plasma treatment
title_sort enhancement of cdsse qd exciton luminescence efficiency by hydrogen rf plasma treatment
publisher Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
publishDate 2003
url http://dspace.nbuv.gov.ua/handle/123456789/118011
citation_txt Enhancement of CdSSe QD exciton luminescence efficiency by hydrogen RF plasma treatment / V.P. Kunets, N.R. Kulish, V.V. Strelchuk, A.N. Nazarov, A.S. Tkachenko, V.S. Lysenko, M.P. Lisitsa // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 2. — С. 169-171. — Бібліогр.: 13 назв. — англ.
series Semiconductor Physics Quantum Electronics & Optoelectronics
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AT nazarovan enhancementofcdsseqdexcitonluminescenceefficiencybyhydrogenrfplasmatreatment
AT tkachenkoas enhancementofcdsseqdexcitonluminescenceefficiencybyhydrogenrfplasmatreatment
AT lysenkovs enhancementofcdsseqdexcitonluminescenceefficiencybyhydrogenrfplasmatreatment
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first_indexed 2023-10-18T20:31:07Z
last_indexed 2023-10-18T20:31:07Z
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