SIMS study of deuterium distribution and thermal stability in ZMR SOI structures за авторством Boutry-Forveille, A., Ballutaud, D., Nazarov, A.N.

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The charge trapping/emission processes in silicon nanocrystalline nonvolatile memory assisted by electric field and elevated temperatures за авторством Ievtukh, V.A., Ulyanov, V.V., Nazarov, A.N.

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Characterization of charge trapping processes in fully-depleted UNIBOND SOI MOSFET subjected to γ-irradiation за авторством Houk, Y., Nazarov, A.N., Turchanikov, V.I., Lysenko, V.S., Andriaensen, S., Flandre, D.

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Photoluminescent properties of oxidized stochiometric and carbon-rich amorphous Si₁₋xCx:H films за авторством Vasin, A.V., Ishikawa, Y., Rusavsky, A.V., Nazarov, A.N., Konchitz, A.A., Lysenko, V.S.

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Enhancement of CdSSe QD exciton luminescence efficiency by hydrogen RF plasma treatment за авторством Kunets, V.P., Kulish, N.R., Strelchuk, V.V., Nazarov, A.N., Tkachenko, A.S., Lysenko, V.S., Lisitsa, M.P.

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High-temperature characteristics of zone-melting recrystallized silicon-on-insulator MOSFETs за авторством Lysenko, V.S., Rudenko, T.E., Nazarov, A.N., Kilchitskaya, V.I., Rudenko, A.N., Limanov, A.B., Colinge, J.-P.

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Effect of chemical and radiofrequency plasma treatment on photoluminescence of SiOx films за авторством Indutnyy, I.Z., Lysenko, V.S., Min'ko, V.I., Nazarov, A.N., Tkachenko, A.S., Shepeliavyi, P.E., Dan'ko, V.A., Maidanchuk, I.Yu.

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Direct synthesized graphene-like film on SiO₂: Mechanical and optical properties за авторством Bortchagovsky, E.G., Vasin, A.V., Lytvyn, P.M., Tiagulskyi, S.I., Slobodian, A.M., Verovsky, I.N., Strelchuk, V.V., Stubrov, Yu., Nazarov, A.N.

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Erratum: Electrical and light-emitting properties of silicon dioxide co-implanted by carbon and silicon ions за авторством Nazarov, A.N., Osiyuk, I.N., Tiagulskyi, S.I., Lysenko, V.S., Tyagulskyy, I.P., Torbin, V.N., Omelchuk, V.V., Nazarova, T.M., Rebohle, L., Skorupa, W.

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Electrical and light-emitting properties of silicon dioxide co-implanted by carbon and silicon ions за авторством Nazarov, A.N., Osiyuk, I.N., Tiagulskyi, S.I., Lysenko, V.S., Tyagulskyy, I.P., Torbin, V.N., Omelchuk, V.V., Nazarova, T.N., Rebohle, L., Skorupa, W.

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Modification of electroluminescence and charge trapping in germanium implanted metal-oxide-silicon light-emitting diodes with plasma treatment за авторством Nazarov, A.N., Skorupa, W., Vovk, Ja.N., Osiyuk, I.N., Tkachenko, A.S., Tyagulskii, I.P., Lysenko, V.S., Gebel, T., Rebohle, L., Yankov, R.A., Nazarova, T.M.

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Features of mechanical scanning probe lithography on graphene oxide and As(Ge)Se chalcogenide resist за авторством Lytvyn, P.M., Malyuta, S.V., Indutnyi, I.Z., Efremov, A.A., Slobodyan, O.V., Min’ko, V.I., Nazarov, A.N., Borysov, O.V., Prokopenko, I.V.

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Reduced graphene oxide obtained using the spray pyrolysis technique for gas sensing за авторством Slobodian, O.M., Milovanov, Yu.S., Skryshevsky, V.A., Vasin, A.V., Tang, X., Raskin, J.-P., Lytvyn, P.M., Svezhentsova, K.V., Malyuta, S.V., Nazarov, A.N.

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Graphene layers fabricated from the Ni/a-SiC bilayer precursor за авторством Nazarov, A.N., Vasin, A.V., Gordienko, S.O., Lytvyn, P.M., Strelchuk, V.V., Nikolenko, A.S., Stubrov, Yu.Yu., Hirov, A.S., Rusavsky, A.V., Popov, V.P., Lysenko, V.S.

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Electroluminescent properties of Tb-doped carbon-enriched silicon oxide за авторством Tiagulskyi, S.I., Nazarov, A.N., Gordienk, S.O., Vasin, A.V., Rusavsky, A.V., Nazarova, T.M., Gomeniuk, Yu.V., Rudko, G.V., Lysenko, V.S., Rebohle, L., Voelskow, M., Skorupa, W., Koshka, Y.

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