SIMS study of deuterium distribution and thermal stability in ZMR SOI structures von Boutry-Forveille, A., Ballutaud, D., Nazarov, A.N.

Volltext

The charge trapping/emission processes in silicon nanocrystalline nonvolatile memory assisted by electric field and elevated temperatures von Ievtukh, V.A., Ulyanov, V.V., Nazarov, A.N.

Volltext

Characterization of charge trapping processes in fully-depleted UNIBOND SOI MOSFET subjected to γ-irradiation von Houk, Y., Nazarov, A.N., Turchanikov, V.I., Lysenko, V.S., Andriaensen, S., Flandre, D.

Volltext

Photoluminescent properties of oxidized stochiometric and carbon-rich amorphous Si₁₋xCx:H films von Vasin, A.V., Ishikawa, Y., Rusavsky, A.V., Nazarov, A.N., Konchitz, A.A., Lysenko, V.S.

Volltext

Enhancement of CdSSe QD exciton luminescence efficiency by hydrogen RF plasma treatment von Kunets, V.P., Kulish, N.R., Strelchuk, V.V., Nazarov, A.N., Tkachenko, A.S., Lysenko, V.S., Lisitsa, M.P.

Volltext

High-temperature characteristics of zone-melting recrystallized silicon-on-insulator MOSFETs von Lysenko, V.S., Rudenko, T.E., Nazarov, A.N., Kilchitskaya, V.I., Rudenko, A.N., Limanov, A.B., Colinge, J.-P.

Volltext

Effect of chemical and radiofrequency plasma treatment on photoluminescence of SiOx films von Indutnyy, I.Z., Lysenko, V.S., Min'ko, V.I., Nazarov, A.N., Tkachenko, A.S., Shepeliavyi, P.E., Dan'ko, V.A., Maidanchuk, I.Yu.

Volltext

Direct synthesized graphene-like film on SiO₂: Mechanical and optical properties von Bortchagovsky, E.G., Vasin, A.V., Lytvyn, P.M., Tiagulskyi, S.I., Slobodian, A.M., Verovsky, I.N., Strelchuk, V.V., Stubrov, Yu., Nazarov, A.N.

Volltext

Erratum: Electrical and light-emitting properties of silicon dioxide co-implanted by carbon and silicon ions von Nazarov, A.N., Osiyuk, I.N., Tiagulskyi, S.I., Lysenko, V.S., Tyagulskyy, I.P., Torbin, V.N., Omelchuk, V.V., Nazarova, T.M., Rebohle, L., Skorupa, W.

Volltext

Electrical and light-emitting properties of silicon dioxide co-implanted by carbon and silicon ions von Nazarov, A.N., Osiyuk, I.N., Tiagulskyi, S.I., Lysenko, V.S., Tyagulskyy, I.P., Torbin, V.N., Omelchuk, V.V., Nazarova, T.N., Rebohle, L., Skorupa, W.

Volltext

Modification of electroluminescence and charge trapping in germanium implanted metal-oxide-silicon light-emitting diodes with plasma treatment von Nazarov, A.N., Skorupa, W., Vovk, Ja.N., Osiyuk, I.N., Tkachenko, A.S., Tyagulskii, I.P., Lysenko, V.S., Gebel, T., Rebohle, L., Yankov, R.A., Nazarova, T.M.

Volltext

Features of mechanical scanning probe lithography on graphene oxide and As(Ge)Se chalcogenide resist von Lytvyn, P.M., Malyuta, S.V., Indutnyi, I.Z., Efremov, A.A., Slobodyan, O.V., Min’ko, V.I., Nazarov, A.N., Borysov, O.V., Prokopenko, I.V.

Volltext

Reduced graphene oxide obtained using the spray pyrolysis technique for gas sensing von Slobodian, O.M., Milovanov, Yu.S., Skryshevsky, V.A., Vasin, A.V., Tang, X., Raskin, J.-P., Lytvyn, P.M., Svezhentsova, K.V., Malyuta, S.V., Nazarov, A.N.

Volltext

Graphene layers fabricated from the Ni/a-SiC bilayer precursor von Nazarov, A.N., Vasin, A.V., Gordienko, S.O., Lytvyn, P.M., Strelchuk, V.V., Nikolenko, A.S., Stubrov, Yu.Yu., Hirov, A.S., Rusavsky, A.V., Popov, V.P., Lysenko, V.S.

Volltext

Electroluminescent properties of Tb-doped carbon-enriched silicon oxide von Tiagulskyi, S.I., Nazarov, A.N., Gordienk, S.O., Vasin, A.V., Rusavsky, A.V., Nazarova, T.M., Gomeniuk, Yu.V., Rudko, G.V., Lysenko, V.S., Rebohle, L., Voelskow, M., Skorupa, W., Koshka, Y.

Volltext