SIMS study of deuterium distribution and thermal stability in ZMR SOI structures

за авторством Boutry-Forveille, A., Ballutaud, D., Nazarov, A.N.
Опубліковано 1998

Hydrogen plasma treatment of silicon thin-film structures and nanostructured layers

за авторством Nazarov, A.N., Lysenko, V.S., Nazarova, T.M.
Опубліковано 2008

The charge trapping/emission processes in silicon nanocrystalline nonvolatile memory assisted by electric field and elevated temperatures

за авторством Ievtukh, V.A., Ulyanov, V.V., Nazarov, A.N.
Опубліковано 2016

Influence of traps in gate oxide-Si film transition layers on FD MOSFET's characteristics at cryogenic emperatures

за авторством Lysenko, V.S., Tyagulsky, I.P., Osiyuk, I.N., Nazarov, A.N.
Опубліковано 2007

Characterization of charge trapping processes in fully-depleted UNIBOND SOI MOSFET subjected to γ-irradiation

за авторством Houk, Y., Nazarov, A.N., Turchanikov, V.I., Lysenko, V.S., Andriaensen, S., Flandre, D.
Опубліковано 2006

Photoluminescent properties of oxidized stochiometric and carbon-rich amorphous Si₁₋xCx:H films

за авторством Vasin, A.V., Ishikawa, Y., Rusavsky, A.V., Nazarov, A.N., Konchitz, A.A., Lysenko, V.S.
Опубліковано 2015

Enhancement of CdSSe QD exciton luminescence efficiency by hydrogen RF plasma treatment

за авторством Kunets, V.P., Kulish, N.R., Strelchuk, V.V., Nazarov, A.N., Tkachenko, A.S., Lysenko, V.S., Lisitsa, M.P.
Опубліковано 2003

High-temperature characteristics of zone-melting recrystallized silicon-on-insulator MOSFETs

за авторством Lysenko, V.S., Rudenko, T.E., Nazarov, A.N., Kilchitskaya, V.I., Rudenko, A.N., Limanov, A.B., Colinge, J.-P.
Опубліковано 1998

Effect of chemical and radiofrequency plasma treatment on photoluminescence of SiOx films

за авторством Indutnyy, I.Z., Lysenko, V.S., Min'ko, V.I., Nazarov, A.N., Tkachenko, A.S., Shepeliavyi, P.E., Dan'ko, V.A., Maidanchuk, I.Yu.
Опубліковано 2006

Novel hysteresis effect in ultrathin epitaxial Gd₂O₃ high-k dielectric

за авторством Nazarov, A.N., Gomeniuk, Y.V., Gomeniuk, Y.Y., Lysenko, V.S., Gottlob, H.D.B., Schmidt, M., Lemme, M.C., Czernohorsky, M., Ostenc, H.J.
Опубліковано 2008

Direct synthesized graphene-like film on SiO₂: Mechanical and optical properties

за авторством Bortchagovsky, E.G., Vasin, A.V., Lytvyn, P.M., Tiagulskyi, S.I., Slobodian, A.M., Verovsky, I.N., Strelchuk, V.V., Stubrov, Yu., Nazarov, A.N.
Опубліковано 2016

Erratum: Electrical and light-emitting properties of silicon dioxide co-implanted by carbon and silicon ions

за авторством Nazarov, A.N., Osiyuk, I.N., Tiagulskyi, S.I., Lysenko, V.S., Tyagulskyy, I.P., Torbin, V.N., Omelchuk, V.V., Nazarova, T.M., Rebohle, L., Skorupa, W.
Опубліковано 2009

Electrical and light-emitting properties of silicon dioxide co-implanted by carbon and silicon ions

за авторством Nazarov, A.N., Osiyuk, I.N., Tiagulskyi, S.I., Lysenko, V.S., Tyagulskyy, I.P., Torbin, V.N., Omelchuk, V.V., Nazarova, T.N., Rebohle, L., Skorupa, W.
Опубліковано 2008

Modification of electroluminescence and charge trapping in germanium implanted metal-oxide-silicon light-emitting diodes with plasma treatment

за авторством Nazarov, A.N., Skorupa, W., Vovk, Ja.N., Osiyuk, I.N., Tkachenko, A.S., Tyagulskii, I.P., Lysenko, V.S., Gebel, T., Rebohle, L., Yankov, R.A., Nazarova, T.M.
Опубліковано 2005

Graphene layers fabricated from the Ni/a-SiC bilayer precursor

за авторством Nazarov, A.N., Vasin, A.V., Gordienko, S.O., Lytvyn, P.M., Strelchuk, V.V., Nikolenko, A.S., Stubrov, Yu.Yu., Hirov, A.S., Rusavsky, A.V., Popov, V.P., Lysenko, V.S.
Опубліковано 2013

Electroluminescent properties of Tb-doped carbon-enriched silicon oxide

за авторством Tiagulskyi, S.I., Nazarov, A.N., Gordienk, S.O., Vasin, A.V., Rusavsky, A.V., Nazarova, T.M., Gomeniuk, Yu.V., Rudko, G.V., Lysenko, V.S., Rebohle, L., Voelskow, M., Skorupa, W., Koshka, Y.
Опубліковано 2014