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Properties of the shallow D-centers in semiconductors with polar and covalent binding

Properties of the shallow D-centers in semiconductors with polar and covalent binding

The theoretical consideration of the energy of the lowest singlet and triplet terms of shallow D¯-centers (two electrons, bound with one-charge Coulomb center) in semiconductors with an ionic and covalent binding has been carried out. The electron-phonon interaction is described by a Frцhlich Hamilt...

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Main Authors: Kashirina, N.I., Lakhno, V.D., Sychyov, V.V., Sheinkman, M.K.
Format: Article
Language:English
Published: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2003
Series:Semiconductor Physics Quantum Electronics & Optoelectronics
Online Access:http://dspace.nbuv.gov.ua/handle/123456789/118028
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spelling irk-123456789-1180282017-05-29T03:02:34Z Properties of the shallow D-centers in semiconductors with polar and covalent binding Kashirina, N.I. Lakhno, V.D. Sychyov, V.V. Sheinkman, M.K. The theoretical consideration of the energy of the lowest singlet and triplet terms of shallow D¯-centers (two electrons, bound with one-charge Coulomb center) in semiconductors with an ionic and covalent binding has been carried out. The electron-phonon interaction is described by a Frцhlich Hamiltonian. The energy of D¯-center is described with the use of a Buimistrov-Pekar method of canonical transformations for arbitrary electron-phonon coupling. It is shown, that for all area of electron-phonon interaction parameters the Buimistrov-Pekar method yields the lowest values of the ground state energy of D¯-centers and free bipolaron in comparison with the best, for today, numerical calculations of the relevant values which have been carried out within the framework of the direct variation methods. The calculations have shown the lack of the bound metastable triplet states corresponding to the lowest triplet energy term of D¯-center and bipolaron for all the area of electron-phonon interaction parameters, in complete analogy to the Hill theorem about the lack of the bound excited states of H¯ ion. It is shown that the account of interaction with acoustic phonons can produce considerable lowering the ground state energy of D¯-center in comparison with the magnitude 1.0555Ry . 2003 Article Properties of the shallow D-centers in semiconductors with polar and covalent binding / N.I. Kashirina, V.D. Lakhno, V.V. Sychyov, M.K. Sheinkman // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 3. — С. 269-273. — Бібліогр.: 12 назв. — англ. 1560-8034 PACS: 71.38, 73.20.D, 74.80.D http://dspace.nbuv.gov.ua/handle/123456789/118028 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
institution Digital Library of Periodicals of National Academy of Sciences of Ukraine
collection DSpace DC
language English
description The theoretical consideration of the energy of the lowest singlet and triplet terms of shallow D¯-centers (two electrons, bound with one-charge Coulomb center) in semiconductors with an ionic and covalent binding has been carried out. The electron-phonon interaction is described by a Frцhlich Hamiltonian. The energy of D¯-center is described with the use of a Buimistrov-Pekar method of canonical transformations for arbitrary electron-phonon coupling. It is shown, that for all area of electron-phonon interaction parameters the Buimistrov-Pekar method yields the lowest values of the ground state energy of D¯-centers and free bipolaron in comparison with the best, for today, numerical calculations of the relevant values which have been carried out within the framework of the direct variation methods. The calculations have shown the lack of the bound metastable triplet states corresponding to the lowest triplet energy term of D¯-center and bipolaron for all the area of electron-phonon interaction parameters, in complete analogy to the Hill theorem about the lack of the bound excited states of H¯ ion. It is shown that the account of interaction with acoustic phonons can produce considerable lowering the ground state energy of D¯-center in comparison with the magnitude 1.0555Ry .
format Article
author Kashirina, N.I.
Lakhno, V.D.
Sychyov, V.V.
Sheinkman, M.K.
spellingShingle Kashirina, N.I.
Lakhno, V.D.
Sychyov, V.V.
Sheinkman, M.K.
Properties of the shallow D-centers in semiconductors with polar and covalent binding
Semiconductor Physics Quantum Electronics & Optoelectronics
author_facet Kashirina, N.I.
Lakhno, V.D.
Sychyov, V.V.
Sheinkman, M.K.
author_sort Kashirina, N.I.
title Properties of the shallow D-centers in semiconductors with polar and covalent binding
title_short Properties of the shallow D-centers in semiconductors with polar and covalent binding
title_full Properties of the shallow D-centers in semiconductors with polar and covalent binding
title_fullStr Properties of the shallow D-centers in semiconductors with polar and covalent binding
title_full_unstemmed Properties of the shallow D-centers in semiconductors with polar and covalent binding
title_sort properties of the shallow d-centers in semiconductors with polar and covalent binding
publisher Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
publishDate 2003
url http://dspace.nbuv.gov.ua/handle/123456789/118028
citation_txt Properties of the shallow D-centers in semiconductors with polar and covalent binding / N.I. Kashirina, V.D. Lakhno, V.V. Sychyov, M.K. Sheinkman // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 3. — С. 269-273. — Бібліогр.: 12 назв. — англ.
series Semiconductor Physics Quantum Electronics & Optoelectronics
work_keys_str_mv AT kashirinani propertiesoftheshallowdcentersinsemiconductorswithpolarandcovalentbinding
AT lakhnovd propertiesoftheshallowdcentersinsemiconductorswithpolarandcovalentbinding
AT sychyovvv propertiesoftheshallowdcentersinsemiconductorswithpolarandcovalentbinding
AT sheinkmanmk propertiesoftheshallowdcentersinsemiconductorswithpolarandcovalentbinding
first_indexed 2023-10-18T20:31:10Z
last_indexed 2023-10-18T20:31:10Z
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