Capture coefficients of free excitons by shallow acceptors and donors in gallium arsenide
An analysis of the 4.2 K exciton luminescence spectra of semi-insulating GaAs crystals with different concentrations of shallow acceptors (С) and donors (Si) is given. As a result, the 4.2 K capture coefficients of free excitons by shallow neutral acceptors [bA₀X = (4 ± 2) 10⁻⁸ cm³/s] and donors [bD...
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| Дата: | 2003 |
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| Автори: | , , |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2003
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| Назва видання: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/118029 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Capture coefficients of free excitons by shallow acceptors and donors in gallium arsenide / K.D. Glinchuk, N.M. Litovchenko, O.N. Strilchuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 3. — С. 274-277. — Бібліогр.: 10 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
irk-123456789-118029 |
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dspace |
| spelling |
irk-123456789-1180292017-05-29T03:02:42Z Capture coefficients of free excitons by shallow acceptors and donors in gallium arsenide Glinchuk, K.D. Litovchenko, N.M. Strilchuk, O.N. An analysis of the 4.2 K exciton luminescence spectra of semi-insulating GaAs crystals with different concentrations of shallow acceptors (С) and donors (Si) is given. As a result, the 4.2 K capture coefficients of free excitons by shallow neutral acceptors [bA₀X = (4 ± 2) 10⁻⁸ cm³/s] and donors [bD₀X= (1.5 ± 0.8) 10⁻⁷ cm³/s] are found and also an estimate of the capture coefficient of free excitons by ionized shallow donors was made . 2003 Article Capture coefficients of free excitons by shallow acceptors and donors in gallium arsenide / K.D. Glinchuk, N.M. Litovchenko, O.N. Strilchuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 3. — С. 274-277. — Бібліогр.: 10 назв. — англ. 1560-8034 PACS: 71.55. E; 78.55. E http://dspace.nbuv.gov.ua/handle/123456789/118029 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| language |
English |
| description |
An analysis of the 4.2 K exciton luminescence spectra of semi-insulating GaAs crystals with different concentrations of shallow acceptors (С) and donors (Si) is given. As a result, the 4.2 K capture coefficients of free excitons by shallow neutral acceptors [bA₀X = (4 ± 2) 10⁻⁸ cm³/s] and donors [bD₀X= (1.5 ± 0.8) 10⁻⁷ cm³/s] are found and also an estimate of the capture coefficient of free excitons by ionized shallow donors was made . |
| format |
Article |
| author |
Glinchuk, K.D. Litovchenko, N.M. Strilchuk, O.N. |
| spellingShingle |
Glinchuk, K.D. Litovchenko, N.M. Strilchuk, O.N. Capture coefficients of free excitons by shallow acceptors and donors in gallium arsenide Semiconductor Physics Quantum Electronics & Optoelectronics |
| author_facet |
Glinchuk, K.D. Litovchenko, N.M. Strilchuk, O.N. |
| author_sort |
Glinchuk, K.D. |
| title |
Capture coefficients of free excitons by shallow acceptors and donors in gallium arsenide |
| title_short |
Capture coefficients of free excitons by shallow acceptors and donors in gallium arsenide |
| title_full |
Capture coefficients of free excitons by shallow acceptors and donors in gallium arsenide |
| title_fullStr |
Capture coefficients of free excitons by shallow acceptors and donors in gallium arsenide |
| title_full_unstemmed |
Capture coefficients of free excitons by shallow acceptors and donors in gallium arsenide |
| title_sort |
capture coefficients of free excitons by shallow acceptors and donors in gallium arsenide |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| publishDate |
2003 |
| url |
http://dspace.nbuv.gov.ua/handle/123456789/118029 |
| citation_txt |
Capture coefficients of free excitons by shallow acceptors and donors in gallium arsenide / K.D. Glinchuk, N.M. Litovchenko, O.N. Strilchuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 3. — С. 274-277. — Бібліогр.: 10 назв. — англ. |
| series |
Semiconductor Physics Quantum Electronics & Optoelectronics |
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2023-10-18T20:31:10Z |
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