Influence of cation vacancy related defects on the self-assembly processes in CdSe/ZnSe quantum dot heterostructures

Influence of cation vacancy related defects on the self-assembly processes in CdSe/ZnSe quantum dot heterostructures

A spatial distribution of the cation vacancy related defects and their influence on the formation processes of self-assembled nanoislands in CdSe/ZnSe heterostructures were investigated by photoluminescence methods. Self-assembling growth was achieved under low temperature (2300C) molecular beam epi...

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Дата:2003
Автори: Borkovska, L.V., Korsunska, N.O., Kushnirenko, V.I., Sadofyev, Yu.G., Sheinkman, M.K.
Формат: Стаття
Мова:English
Опубліковано: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2003
Назва видання:Semiconductor Physics Quantum Electronics & Optoelectronics
Онлайн доступ:http://dspace.nbuv.gov.ua/handle/123456789/118032
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Назва журналу:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Цитувати:Influence of cation vacancy related defects on the self-assembly processes in CdSe/ZnSe quantum dot heterostructures / L.V. Borkovska, N.O. Korsunska, V.I. Kushnirenko, Yu.G. Sadofyev, M.K. Sheinkman // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 3. — С. 294-298. — Бібліогр.: 11 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine
id irk-123456789-118032
record_format dspace
spelling irk-123456789-1180322017-05-29T03:02:45Z Influence of cation vacancy related defects on the self-assembly processes in CdSe/ZnSe quantum dot heterostructures Borkovska, L.V. Korsunska, N.O. Kushnirenko, V.I. Sadofyev, Yu.G. Sheinkman, M.K. A spatial distribution of the cation vacancy related defects and their influence on the formation processes of self-assembled nanoislands in CdSe/ZnSe heterostructures were investigated by photoluminescence methods. Self-assembling growth was achieved under low temperature (2300C) molecular beam epitaxy with a subsequent annealing step. To change a number of cation vacancy related defects a VI/II beam pressure ratio РVI/РII was varied from 2:1 to 5:1. In the samples grown under РVI/РII = 5:1 a significant increase of self activated emission band caused by cation vacancy related defects was found. A study of the excitation spectra of defect related band revealed that in all samples the cation vacancy related defects are present in ZnCdSe wetting layer. In the samples grown under РVI/РII = 5:1 they were observed on nanoisland interface too. It was found that the increase of Se beam pressure results also in high energy shift and narrowing of nanoisland emission band. This process is accompanied by low energy shift of ZnSe band-to-band emission. Observed changes in photoluminescence spectra are explained by the decrease of Cd content in ZnCdSe layer due to enhancement of Cd/Zn interdiffusion process in the result of the increase of vacancy related defect number. 2003 Article Influence of cation vacancy related defects on the self-assembly processes in CdSe/ZnSe quantum dot heterostructures / L.V. Borkovska, N.O. Korsunska, V.I. Kushnirenko, Yu.G. Sadofyev, M.K. Sheinkman // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 3. — С. 294-298. — Бібліогр.: 11 назв. — англ. 1560-8034 PACS: 78.55.Et; 78.67.Hc; 71.55Gs http://dspace.nbuv.gov.ua/handle/123456789/118032 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
institution Digital Library of Periodicals of National Academy of Sciences of Ukraine
collection DSpace DC
language English
description A spatial distribution of the cation vacancy related defects and their influence on the formation processes of self-assembled nanoislands in CdSe/ZnSe heterostructures were investigated by photoluminescence methods. Self-assembling growth was achieved under low temperature (2300C) molecular beam epitaxy with a subsequent annealing step. To change a number of cation vacancy related defects a VI/II beam pressure ratio РVI/РII was varied from 2:1 to 5:1. In the samples grown under РVI/РII = 5:1 a significant increase of self activated emission band caused by cation vacancy related defects was found. A study of the excitation spectra of defect related band revealed that in all samples the cation vacancy related defects are present in ZnCdSe wetting layer. In the samples grown under РVI/РII = 5:1 they were observed on nanoisland interface too. It was found that the increase of Se beam pressure results also in high energy shift and narrowing of nanoisland emission band. This process is accompanied by low energy shift of ZnSe band-to-band emission. Observed changes in photoluminescence spectra are explained by the decrease of Cd content in ZnCdSe layer due to enhancement of Cd/Zn interdiffusion process in the result of the increase of vacancy related defect number.
format Article
author Borkovska, L.V.
Korsunska, N.O.
Kushnirenko, V.I.
Sadofyev, Yu.G.
Sheinkman, M.K.
spellingShingle Borkovska, L.V.
Korsunska, N.O.
Kushnirenko, V.I.
Sadofyev, Yu.G.
Sheinkman, M.K.
Influence of cation vacancy related defects on the self-assembly processes in CdSe/ZnSe quantum dot heterostructures
Semiconductor Physics Quantum Electronics & Optoelectronics
author_facet Borkovska, L.V.
Korsunska, N.O.
Kushnirenko, V.I.
Sadofyev, Yu.G.
Sheinkman, M.K.
author_sort Borkovska, L.V.
title Influence of cation vacancy related defects on the self-assembly processes in CdSe/ZnSe quantum dot heterostructures
title_short Influence of cation vacancy related defects on the self-assembly processes in CdSe/ZnSe quantum dot heterostructures
title_full Influence of cation vacancy related defects on the self-assembly processes in CdSe/ZnSe quantum dot heterostructures
title_fullStr Influence of cation vacancy related defects on the self-assembly processes in CdSe/ZnSe quantum dot heterostructures
title_full_unstemmed Influence of cation vacancy related defects on the self-assembly processes in CdSe/ZnSe quantum dot heterostructures
title_sort influence of cation vacancy related defects on the self-assembly processes in cdse/znse quantum dot heterostructures
publisher Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
publishDate 2003
url http://dspace.nbuv.gov.ua/handle/123456789/118032
citation_txt Influence of cation vacancy related defects on the self-assembly processes in CdSe/ZnSe quantum dot heterostructures / L.V. Borkovska, N.O. Korsunska, V.I. Kushnirenko, Yu.G. Sadofyev, M.K. Sheinkman // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 3. — С. 294-298. — Бібліогр.: 11 назв. — англ.
series Semiconductor Physics Quantum Electronics & Optoelectronics
work_keys_str_mv AT borkovskalv influenceofcationvacancyrelateddefectsontheselfassemblyprocessesincdseznsequantumdotheterostructures
AT korsunskano influenceofcationvacancyrelateddefectsontheselfassemblyprocessesincdseznsequantumdotheterostructures
AT kushnirenkovi influenceofcationvacancyrelateddefectsontheselfassemblyprocessesincdseznsequantumdotheterostructures
AT sadofyevyug influenceofcationvacancyrelateddefectsontheselfassemblyprocessesincdseznsequantumdotheterostructures
AT sheinkmanmk influenceofcationvacancyrelateddefectsontheselfassemblyprocessesincdseznsequantumdotheterostructures
first_indexed 2023-10-18T20:31:10Z
last_indexed 2023-10-18T20:31:10Z
_version_ 1796150412744589312

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