Unipolar injection currents in Bi₄Ge₃O₁₂ crystals
Current-voltage characteristics of bismuth orthogermanate (Bi₄Ge₃O₁₂) single crystals have been measured at different temperatures under conditions of unipolar injection of charge carriers. It has been found that conduction is characterized by the existence of two channels of the percolation. The te...
Збережено в:
| Дата: | 2003 |
|---|---|
| Автори: | , , |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2003
|
| Назва видання: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/118075 |
| Теги: |
Додати тег
Немає тегів, Будьте першим, хто поставить тег для цього запису!
|
| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Unipolar injection currents in Bi₄Ge₃O₁₂ crystals / T.M. Bochkova, S.N. Plyaka, G.Ch. Sokolyanskii // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 4. — С. 461-464. — Бібліогр.: 23 назв. — англ. |
Репозиторії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
irk-123456789-118075 |
|---|---|
| record_format |
dspace |
| spelling |
irk-123456789-1180752017-05-29T03:05:05Z Unipolar injection currents in Bi₄Ge₃O₁₂ crystals Bochkova, T.M. Plyaka, S.N. Sokolyanskii, G.Ch. Current-voltage characteristics of bismuth orthogermanate (Bi₄Ge₃O₁₂) single crystals have been measured at different temperatures under conditions of unipolar injection of charge carriers. It has been found that conduction is characterized by the existence of two channels of the percolation. The temperature dependencies of the conductivity, mobility and concentration of the electrons and holes are considered. The obtained results are discussed in terms of hopping transport model of charge carriers in doped heavily compensated semiconductors. 2003 Article Unipolar injection currents in Bi₄Ge₃O₁₂ crystals / T.M. Bochkova, S.N. Plyaka, G.Ch. Sokolyanskii // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 4. — С. 461-464. — Бібліогр.: 23 назв. — англ. 1560-8034 PACS: 72.20 Iv http://dspace.nbuv.gov.ua/handle/123456789/118075 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| language |
English |
| description |
Current-voltage characteristics of bismuth orthogermanate (Bi₄Ge₃O₁₂) single crystals have been measured at different temperatures under conditions of unipolar injection of charge carriers. It has been found that conduction is characterized by the existence of two channels of the percolation. The temperature dependencies of the conductivity, mobility and concentration of the electrons and holes are considered. The obtained results are discussed in terms of hopping transport model of charge carriers in doped heavily compensated semiconductors. |
| format |
Article |
| author |
Bochkova, T.M. Plyaka, S.N. Sokolyanskii, G.Ch. |
| spellingShingle |
Bochkova, T.M. Plyaka, S.N. Sokolyanskii, G.Ch. Unipolar injection currents in Bi₄Ge₃O₁₂ crystals Semiconductor Physics Quantum Electronics & Optoelectronics |
| author_facet |
Bochkova, T.M. Plyaka, S.N. Sokolyanskii, G.Ch. |
| author_sort |
Bochkova, T.M. |
| title |
Unipolar injection currents in Bi₄Ge₃O₁₂ crystals |
| title_short |
Unipolar injection currents in Bi₄Ge₃O₁₂ crystals |
| title_full |
Unipolar injection currents in Bi₄Ge₃O₁₂ crystals |
| title_fullStr |
Unipolar injection currents in Bi₄Ge₃O₁₂ crystals |
| title_full_unstemmed |
Unipolar injection currents in Bi₄Ge₃O₁₂ crystals |
| title_sort |
unipolar injection currents in bi₄ge₃o₁₂ crystals |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| publishDate |
2003 |
| url |
http://dspace.nbuv.gov.ua/handle/123456789/118075 |
| citation_txt |
Unipolar injection currents in Bi₄Ge₃O₁₂ crystals / T.M. Bochkova, S.N. Plyaka, G.Ch. Sokolyanskii // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 4. — С. 461-464. — Бібліогр.: 23 назв. — англ. |
| series |
Semiconductor Physics Quantum Electronics & Optoelectronics |
| work_keys_str_mv |
AT bochkovatm unipolarinjectioncurrentsinbi4ge3o12crystals AT plyakasn unipolarinjectioncurrentsinbi4ge3o12crystals AT sokolyanskiigch unipolarinjectioncurrentsinbi4ge3o12crystals |
| first_indexed |
2023-10-18T20:31:17Z |
| last_indexed |
2023-10-18T20:31:17Z |
| _version_ |
1796150417400266752 |