Unipolar injection currents in Bi₄Ge₃O₁₂ crystals

Current-voltage characteristics of bismuth orthogermanate (Bi₄Ge₃O₁₂) single crystals have been measured at different temperatures under conditions of unipolar injection of charge carriers. It has been found that conduction is characterized by the existence of two channels of the percolation. The te...

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Дата:2003
Автори: Bochkova, T.M., Plyaka, S.N., Sokolyanskii, G.Ch.
Формат: Стаття
Мова:English
Опубліковано: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2003
Назва видання:Semiconductor Physics Quantum Electronics & Optoelectronics
Онлайн доступ:http://dspace.nbuv.gov.ua/handle/123456789/118075
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Назва журналу:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Цитувати:Unipolar injection currents in Bi₄Ge₃O₁₂ crystals / T.M. Bochkova, S.N. Plyaka, G.Ch. Sokolyanskii // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 4. — С. 461-464. — Бібліогр.: 23 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine
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spelling irk-123456789-1180752017-05-29T03:05:05Z Unipolar injection currents in Bi₄Ge₃O₁₂ crystals Bochkova, T.M. Plyaka, S.N. Sokolyanskii, G.Ch. Current-voltage characteristics of bismuth orthogermanate (Bi₄Ge₃O₁₂) single crystals have been measured at different temperatures under conditions of unipolar injection of charge carriers. It has been found that conduction is characterized by the existence of two channels of the percolation. The temperature dependencies of the conductivity, mobility and concentration of the electrons and holes are considered. The obtained results are discussed in terms of hopping transport model of charge carriers in doped heavily compensated semiconductors. 2003 Article Unipolar injection currents in Bi₄Ge₃O₁₂ crystals / T.M. Bochkova, S.N. Plyaka, G.Ch. Sokolyanskii // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 4. — С. 461-464. — Бібліогр.: 23 назв. — англ. 1560-8034 PACS: 72.20 Iv http://dspace.nbuv.gov.ua/handle/123456789/118075 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
institution Digital Library of Periodicals of National Academy of Sciences of Ukraine
collection DSpace DC
language English
description Current-voltage characteristics of bismuth orthogermanate (Bi₄Ge₃O₁₂) single crystals have been measured at different temperatures under conditions of unipolar injection of charge carriers. It has been found that conduction is characterized by the existence of two channels of the percolation. The temperature dependencies of the conductivity, mobility and concentration of the electrons and holes are considered. The obtained results are discussed in terms of hopping transport model of charge carriers in doped heavily compensated semiconductors.
format Article
author Bochkova, T.M.
Plyaka, S.N.
Sokolyanskii, G.Ch.
spellingShingle Bochkova, T.M.
Plyaka, S.N.
Sokolyanskii, G.Ch.
Unipolar injection currents in Bi₄Ge₃O₁₂ crystals
Semiconductor Physics Quantum Electronics & Optoelectronics
author_facet Bochkova, T.M.
Plyaka, S.N.
Sokolyanskii, G.Ch.
author_sort Bochkova, T.M.
title Unipolar injection currents in Bi₄Ge₃O₁₂ crystals
title_short Unipolar injection currents in Bi₄Ge₃O₁₂ crystals
title_full Unipolar injection currents in Bi₄Ge₃O₁₂ crystals
title_fullStr Unipolar injection currents in Bi₄Ge₃O₁₂ crystals
title_full_unstemmed Unipolar injection currents in Bi₄Ge₃O₁₂ crystals
title_sort unipolar injection currents in bi₄ge₃o₁₂ crystals
publisher Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
publishDate 2003
url http://dspace.nbuv.gov.ua/handle/123456789/118075
citation_txt Unipolar injection currents in Bi₄Ge₃O₁₂ crystals / T.M. Bochkova, S.N. Plyaka, G.Ch. Sokolyanskii // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 4. — С. 461-464. — Бібліогр.: 23 назв. — англ.
series Semiconductor Physics Quantum Electronics & Optoelectronics
work_keys_str_mv AT bochkovatm unipolarinjectioncurrentsinbi4ge3o12crystals
AT plyakasn unipolarinjectioncurrentsinbi4ge3o12crystals
AT sokolyanskiigch unipolarinjectioncurrentsinbi4ge3o12crystals
first_indexed 2023-10-18T20:31:17Z
last_indexed 2023-10-18T20:31:17Z
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