Classification of microdefects in semiconducting silicon
On the basis of experimental analysis (preferential etching, transmission electron microscopy) of the dislocation-free silicon single crystals grown by floating-zone method (FZ-Si) and Czochralski method (Cz-Si), a classification of grown-in microdefects was compiled. The suggested classification is...
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| Видавець: | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
|---|---|
| Дата: | 2003 |
| Автори: | , |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2003
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| Назва видання: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/118081 |
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| Цитувати: | Classification of microdefects in semiconducting silicon / V.I. Talanin, I.E. Talanin // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 4. — С. 431-436. — Бібліогр.: 40 назв. — англ. |
Репозиторії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
irk-123456789-118081 |
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irk-123456789-1180812017-05-29T03:03:22Z Classification of microdefects in semiconducting silicon Talanin, V.I. Talanin, I.E. On the basis of experimental analysis (preferential etching, transmission electron microscopy) of the dislocation-free silicon single crystals grown by floating-zone method (FZ-Si) and Czochralski method (Cz-Si), a classification of grown-in microdefects was compiled. The suggested classification is founded on the heterogeneous formation mechanism of grown-in microdefects, which was justified earlier by us. The suggested classification is valid for crystals of either small or large diameter. 2003 Article Classification of microdefects in semiconducting silicon / V.I. Talanin, I.E. Talanin // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 4. — С. 431-436. — Бібліогр.: 40 назв. — англ. 1560-8034 PACS: 61.72.Bb; 61.72.Ji; 61.72.Yx http://dspace.nbuv.gov.ua/handle/123456789/118081 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| language |
English |
| description |
On the basis of experimental analysis (preferential etching, transmission electron microscopy) of the dislocation-free silicon single crystals grown by floating-zone method (FZ-Si) and Czochralski method (Cz-Si), a classification of grown-in microdefects was compiled. The suggested classification is founded on the heterogeneous formation mechanism of grown-in microdefects, which was justified earlier by us. The suggested classification is valid for crystals of either small or large diameter. |
| format |
Article |
| author |
Talanin, V.I. Talanin, I.E. |
| spellingShingle |
Talanin, V.I. Talanin, I.E. Classification of microdefects in semiconducting silicon Semiconductor Physics Quantum Electronics & Optoelectronics |
| author_facet |
Talanin, V.I. Talanin, I.E. |
| author_sort |
Talanin, V.I. |
| title |
Classification of microdefects in semiconducting silicon |
| title_short |
Classification of microdefects in semiconducting silicon |
| title_full |
Classification of microdefects in semiconducting silicon |
| title_fullStr |
Classification of microdefects in semiconducting silicon |
| title_full_unstemmed |
Classification of microdefects in semiconducting silicon |
| title_sort |
classification of microdefects in semiconducting silicon |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| publishDate |
2003 |
| url |
http://dspace.nbuv.gov.ua/handle/123456789/118081 |
| citation_txt |
Classification of microdefects in semiconducting silicon / V.I. Talanin, I.E. Talanin // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 4. — С. 431-436. — Бібліогр.: 40 назв. — англ. |
| series |
Semiconductor Physics Quantum Electronics & Optoelectronics |
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AT talaninvi classificationofmicrodefectsinsemiconductingsilicon AT talaninie classificationofmicrodefectsinsemiconductingsilicon |
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2023-10-18T20:31:17Z |
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2023-10-18T20:31:17Z |
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1796150418035703808 |