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Classification of microdefects in semiconducting silicon

Classification of microdefects in semiconducting silicon

On the basis of experimental analysis (preferential etching, transmission electron microscopy) of the dislocation-free silicon single crystals grown by floating-zone method (FZ-Si) and Czochralski method (Cz-Si), a classification of grown-in microdefects was compiled. The suggested classification is...

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Main Authors: Talanin, V.I., Talanin, I.E.
Format: Article
Language:English
Published: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2003
Series:Semiconductor Physics Quantum Electronics & Optoelectronics
Online Access:http://dspace.nbuv.gov.ua/handle/123456789/118081
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spelling irk-123456789-1180812017-05-29T03:03:22Z Classification of microdefects in semiconducting silicon Talanin, V.I. Talanin, I.E. On the basis of experimental analysis (preferential etching, transmission electron microscopy) of the dislocation-free silicon single crystals grown by floating-zone method (FZ-Si) and Czochralski method (Cz-Si), a classification of grown-in microdefects was compiled. The suggested classification is founded on the heterogeneous formation mechanism of grown-in microdefects, which was justified earlier by us. The suggested classification is valid for crystals of either small or large diameter. 2003 Article Classification of microdefects in semiconducting silicon / V.I. Talanin, I.E. Talanin // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 4. — С. 431-436. — Бібліогр.: 40 назв. — англ. 1560-8034 PACS: 61.72.Bb; 61.72.Ji; 61.72.Yx http://dspace.nbuv.gov.ua/handle/123456789/118081 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
institution Digital Library of Periodicals of National Academy of Sciences of Ukraine
collection DSpace DC
language English
description On the basis of experimental analysis (preferential etching, transmission electron microscopy) of the dislocation-free silicon single crystals grown by floating-zone method (FZ-Si) and Czochralski method (Cz-Si), a classification of grown-in microdefects was compiled. The suggested classification is founded on the heterogeneous formation mechanism of grown-in microdefects, which was justified earlier by us. The suggested classification is valid for crystals of either small or large diameter.
format Article
author Talanin, V.I.
Talanin, I.E.
spellingShingle Talanin, V.I.
Talanin, I.E.
Classification of microdefects in semiconducting silicon
Semiconductor Physics Quantum Electronics & Optoelectronics
author_facet Talanin, V.I.
Talanin, I.E.
author_sort Talanin, V.I.
title Classification of microdefects in semiconducting silicon
title_short Classification of microdefects in semiconducting silicon
title_full Classification of microdefects in semiconducting silicon
title_fullStr Classification of microdefects in semiconducting silicon
title_full_unstemmed Classification of microdefects in semiconducting silicon
title_sort classification of microdefects in semiconducting silicon
publisher Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
publishDate 2003
url http://dspace.nbuv.gov.ua/handle/123456789/118081
citation_txt Classification of microdefects in semiconducting silicon / V.I. Talanin, I.E. Talanin // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 4. — С. 431-436. — Бібліогр.: 40 назв. — англ.
series Semiconductor Physics Quantum Electronics & Optoelectronics
work_keys_str_mv AT talaninvi classificationofmicrodefectsinsemiconductingsilicon
AT talaninie classificationofmicrodefectsinsemiconductingsilicon
first_indexed 2023-10-18T20:31:17Z
last_indexed 2023-10-18T20:31:17Z
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