Structural changes in multilayer systems containing InxGa₁₋xAs₁₋yNy quantum wells

Structural changes in multilayer systems containing InxGa₁₋xAs₁₋yNy quantum wells

The investigations of multilayer nano-scale systems contained one or two quantum wells are carried out by double-crystal X-ray diffractometry. Processes of interdiffusion of In, Ga atoms and their influence on properties of such systems are considered. The content of nitrogen in quantum wells and bu...

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Бібліографічні деталі
Дата:2003
Автори: Fodchuk, I.M., Gevyk, V.B., Gimchinsky, O.G., Kislovskii, E.N., Kroytor, O.P., Molodkin, V.B., Olihovskii, S.I., Pavelescu, E.M., Pessa, M.
Формат: Стаття
Мова:English
Опубліковано: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2003
Назва видання:Semiconductor Physics Quantum Electronics & Optoelectronics
Онлайн доступ:http://dspace.nbuv.gov.ua/handle/123456789/118086
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Назва журналу:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Цитувати:Structural changes in multilayer systems containing InxGa₁₋xAs₁₋yNy quantum wells / I.M. Fodchuk, V.B. Gevyk, O.G. Gimchinsky, E.N. Kislovskii, O.P. Kroytor, V.B. Molodkin, S.I. Olihovskii, E.M. Pavelescu, M. Pessa // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 4. — С. 479-486. — Бібліогр.: 23 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine
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spelling irk-123456789-1180862017-05-29T03:03:25Z Structural changes in multilayer systems containing InxGa₁₋xAs₁₋yNy quantum wells Fodchuk, I.M. Gevyk, V.B. Gimchinsky, O.G. Kislovskii, E.N. Kroytor, O.P. Molodkin, V.B. Olihovskii, S.I. Pavelescu, E.M. Pessa, M. The investigations of multilayer nano-scale systems contained one or two quantum wells are carried out by double-crystal X-ray diffractometry. Processes of interdiffusion of In, Ga atoms and their influence on properties of such systems are considered. The content of nitrogen in quantum wells and buffer layers are defined. It is determined that InxGa₁₋xAs₁₋yNy system has perfect crystalline structure, and interface between layers is coherent. 2003 Article Structural changes in multilayer systems containing InxGa₁₋xAs₁₋yNy quantum wells / I.M. Fodchuk, V.B. Gevyk, O.G. Gimchinsky, E.N. Kislovskii, O.P. Kroytor, V.B. Molodkin, S.I. Olihovskii, E.M. Pavelescu, M. Pessa // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 4. — С. 479-486. — Бібліогр.: 23 назв. — англ. 1560-8034 PACS: 68.65.Fg http://dspace.nbuv.gov.ua/handle/123456789/118086 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
institution Digital Library of Periodicals of National Academy of Sciences of Ukraine
collection DSpace DC
language English
description The investigations of multilayer nano-scale systems contained one or two quantum wells are carried out by double-crystal X-ray diffractometry. Processes of interdiffusion of In, Ga atoms and their influence on properties of such systems are considered. The content of nitrogen in quantum wells and buffer layers are defined. It is determined that InxGa₁₋xAs₁₋yNy system has perfect crystalline structure, and interface between layers is coherent.
format Article
author Fodchuk, I.M.
Gevyk, V.B.
Gimchinsky, O.G.
Kislovskii, E.N.
Kroytor, O.P.
Molodkin, V.B.
Olihovskii, S.I.
Pavelescu, E.M.
Pessa, M.
spellingShingle Fodchuk, I.M.
Gevyk, V.B.
Gimchinsky, O.G.
Kislovskii, E.N.
Kroytor, O.P.
Molodkin, V.B.
Olihovskii, S.I.
Pavelescu, E.M.
Pessa, M.
Structural changes in multilayer systems containing InxGa₁₋xAs₁₋yNy quantum wells
Semiconductor Physics Quantum Electronics & Optoelectronics
author_facet Fodchuk, I.M.
Gevyk, V.B.
Gimchinsky, O.G.
Kislovskii, E.N.
Kroytor, O.P.
Molodkin, V.B.
Olihovskii, S.I.
Pavelescu, E.M.
Pessa, M.
author_sort Fodchuk, I.M.
title Structural changes in multilayer systems containing InxGa₁₋xAs₁₋yNy quantum wells
title_short Structural changes in multilayer systems containing InxGa₁₋xAs₁₋yNy quantum wells
title_full Structural changes in multilayer systems containing InxGa₁₋xAs₁₋yNy quantum wells
title_fullStr Structural changes in multilayer systems containing InxGa₁₋xAs₁₋yNy quantum wells
title_full_unstemmed Structural changes in multilayer systems containing InxGa₁₋xAs₁₋yNy quantum wells
title_sort structural changes in multilayer systems containing inxga₁₋xas₁₋yny quantum wells
publisher Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
publishDate 2003
url http://dspace.nbuv.gov.ua/handle/123456789/118086
citation_txt Structural changes in multilayer systems containing InxGa₁₋xAs₁₋yNy quantum wells / I.M. Fodchuk, V.B. Gevyk, O.G. Gimchinsky, E.N. Kislovskii, O.P. Kroytor, V.B. Molodkin, S.I. Olihovskii, E.M. Pavelescu, M. Pessa // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 4. — С. 479-486. — Бібліогр.: 23 назв. — англ.
series Semiconductor Physics Quantum Electronics & Optoelectronics
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first_indexed 2023-10-18T20:31:18Z
last_indexed 2023-10-18T20:31:18Z
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