Effect of microwave electromagnetic radiation on the structure, photoluminescence and electronic properties of nanocrystalline silicon films on silicon substrate

Effect of microwave electromagnetic radiation on the structure, photoluminescence and electronic properties of nanocrystalline silicon films on silicon substrate

We studied the effect of microwave electromagnetic radiation on silicon low-dimensional structures. The nanocrystalline silicon (nc-Si) films on p-Si substrate were formed with pulsed laser ablation. The surface morphology of films was studied with atomic force microscopy. We made X-ray phase analys...

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Бібліографічні деталі
Дата:2003
Автори: Kaganovich, E.B., Kizyak, I.M., Kirillova, S.I., Konakova, R.V., Lytvyn, O.S., Lytvyn, P.M., Manoilov, E.G., Primachenko, V.E., Prokopenko, I.V.
Формат: Стаття
Мова:English
Опубліковано: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2003
Назва видання:Semiconductor Physics Quantum Electronics & Optoelectronics
Онлайн доступ:http://dspace.nbuv.gov.ua/handle/123456789/118090
Теги: Додати тег
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Назва журналу:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Цитувати:Effect of microwave electromagnetic radiation on the structure, photoluminescence and electronic properties of nanocrystalline silicon films on silicon substrate / E.B. Kaganovich, I.M. Kizyak, S.I. Kirillova, R.V. Konakova, O.S. Lytvyn, P.M. Lytvyn, E.G. Manoilov, V.E. Primachenko, I.V. Prokopenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 4. — С. 471-478. — Бібліогр.: 12 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine
id irk-123456789-118090
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spelling irk-123456789-1180902017-05-29T03:05:29Z Effect of microwave electromagnetic radiation on the structure, photoluminescence and electronic properties of nanocrystalline silicon films on silicon substrate Kaganovich, E.B. Kizyak, I.M. Kirillova, S.I. Konakova, R.V. Lytvyn, O.S. Lytvyn, P.M. Manoilov, E.G. Primachenko, V.E. Prokopenko, I.V. We studied the effect of microwave electromagnetic radiation on silicon low-dimensional structures. The nanocrystalline silicon (nc-Si) films on p-Si substrate were formed with pulsed laser ablation. The surface morphology of films was studied with atomic force microscopy. We made X-ray phase analysis of films and measured strains in the structures obtained using X-ray diffractometry. We also investigated the time-resolved photoluminescence (PL) spectra and temperature dependence of photovoltage for the nc-Si/p-Si and nc- Si<Au>/p-Si structures, both before and after exposure to magnetron microwave radiation of moderate (1.5 W/cm²) irradiance. It was shown that after microwave irradiation photovoltage in the nc-Si films, as well as electron trap concentration in both the films and p-Si substrates, decrease. After irradiation of the nc-Si/p-Si structures the density of interfacial electron states (IES) decreases, while both PL intensity and relaxation time increase. At the same time irradiation of the nc-Si<Au>/p-Si structures that had high values of PL intensities and relaxation times before irradiation results in decrease of these values, as well as somewhat increases the density of IES. Higher (7.5 W/cm2) irradiance of microwave field impairs the PL properties (to the point of complete disappearance of PL). In addition it induces changes in film structure resulting, in the course of time, in decrease of strains in the structures studied. We discuss some mechanisms for microwave field effect on the properties of these structures. 2003 Article Effect of microwave electromagnetic radiation on the structure, photoluminescence and electronic properties of nanocrystalline silicon films on silicon substrate / E.B. Kaganovich, I.M. Kizyak, S.I. Kirillova, R.V. Konakova, O.S. Lytvyn, P.M. Lytvyn, E.G. Manoilov, V.E. Primachenko, I.V. Prokopenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 4. — С. 471-478. — Бібліогр.: 12 назв. — англ. 1560-8034 PACS: 73.63.Bd, 78.55.Ap, 78.67.Bf http://dspace.nbuv.gov.ua/handle/123456789/118090 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
institution Digital Library of Periodicals of National Academy of Sciences of Ukraine
collection DSpace DC
language English
description We studied the effect of microwave electromagnetic radiation on silicon low-dimensional structures. The nanocrystalline silicon (nc-Si) films on p-Si substrate were formed with pulsed laser ablation. The surface morphology of films was studied with atomic force microscopy. We made X-ray phase analysis of films and measured strains in the structures obtained using X-ray diffractometry. We also investigated the time-resolved photoluminescence (PL) spectra and temperature dependence of photovoltage for the nc-Si/p-Si and nc- Si<Au>/p-Si structures, both before and after exposure to magnetron microwave radiation of moderate (1.5 W/cm²) irradiance. It was shown that after microwave irradiation photovoltage in the nc-Si films, as well as electron trap concentration in both the films and p-Si substrates, decrease. After irradiation of the nc-Si/p-Si structures the density of interfacial electron states (IES) decreases, while both PL intensity and relaxation time increase. At the same time irradiation of the nc-Si<Au>/p-Si structures that had high values of PL intensities and relaxation times before irradiation results in decrease of these values, as well as somewhat increases the density of IES. Higher (7.5 W/cm2) irradiance of microwave field impairs the PL properties (to the point of complete disappearance of PL). In addition it induces changes in film structure resulting, in the course of time, in decrease of strains in the structures studied. We discuss some mechanisms for microwave field effect on the properties of these structures.
format Article
author Kaganovich, E.B.
Kizyak, I.M.
Kirillova, S.I.
Konakova, R.V.
Lytvyn, O.S.
Lytvyn, P.M.
Manoilov, E.G.
Primachenko, V.E.
Prokopenko, I.V.
spellingShingle Kaganovich, E.B.
Kizyak, I.M.
Kirillova, S.I.
Konakova, R.V.
Lytvyn, O.S.
Lytvyn, P.M.
Manoilov, E.G.
Primachenko, V.E.
Prokopenko, I.V.
Effect of microwave electromagnetic radiation on the structure, photoluminescence and electronic properties of nanocrystalline silicon films on silicon substrate
Semiconductor Physics Quantum Electronics & Optoelectronics
author_facet Kaganovich, E.B.
Kizyak, I.M.
Kirillova, S.I.
Konakova, R.V.
Lytvyn, O.S.
Lytvyn, P.M.
Manoilov, E.G.
Primachenko, V.E.
Prokopenko, I.V.
author_sort Kaganovich, E.B.
title Effect of microwave electromagnetic radiation on the structure, photoluminescence and electronic properties of nanocrystalline silicon films on silicon substrate
title_short Effect of microwave electromagnetic radiation on the structure, photoluminescence and electronic properties of nanocrystalline silicon films on silicon substrate
title_full Effect of microwave electromagnetic radiation on the structure, photoluminescence and electronic properties of nanocrystalline silicon films on silicon substrate
title_fullStr Effect of microwave electromagnetic radiation on the structure, photoluminescence and electronic properties of nanocrystalline silicon films on silicon substrate
title_full_unstemmed Effect of microwave electromagnetic radiation on the structure, photoluminescence and electronic properties of nanocrystalline silicon films on silicon substrate
title_sort effect of microwave electromagnetic radiation on the structure, photoluminescence and electronic properties of nanocrystalline silicon films on silicon substrate
publisher Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
publishDate 2003
url http://dspace.nbuv.gov.ua/handle/123456789/118090
citation_txt Effect of microwave electromagnetic radiation on the structure, photoluminescence and electronic properties of nanocrystalline silicon films on silicon substrate / E.B. Kaganovich, I.M. Kizyak, S.I. Kirillova, R.V. Konakova, O.S. Lytvyn, P.M. Lytvyn, E.G. Manoilov, V.E. Primachenko, I.V. Prokopenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 4. — С. 471-478. — Бібліогр.: 12 назв. — англ.
series Semiconductor Physics Quantum Electronics & Optoelectronics
work_keys_str_mv AT kaganovicheb effectofmicrowaveelectromagneticradiationonthestructurephotoluminescenceandelectronicpropertiesofnanocrystallinesiliconfilmsonsiliconsubstrate
AT kizyakim effectofmicrowaveelectromagneticradiationonthestructurephotoluminescenceandelectronicpropertiesofnanocrystallinesiliconfilmsonsiliconsubstrate
AT kirillovasi effectofmicrowaveelectromagneticradiationonthestructurephotoluminescenceandelectronicpropertiesofnanocrystallinesiliconfilmsonsiliconsubstrate
AT konakovarv effectofmicrowaveelectromagneticradiationonthestructurephotoluminescenceandelectronicpropertiesofnanocrystallinesiliconfilmsonsiliconsubstrate
AT lytvynos effectofmicrowaveelectromagneticradiationonthestructurephotoluminescenceandelectronicpropertiesofnanocrystallinesiliconfilmsonsiliconsubstrate
AT lytvynpm effectofmicrowaveelectromagneticradiationonthestructurephotoluminescenceandelectronicpropertiesofnanocrystallinesiliconfilmsonsiliconsubstrate
AT manoiloveg effectofmicrowaveelectromagneticradiationonthestructurephotoluminescenceandelectronicpropertiesofnanocrystallinesiliconfilmsonsiliconsubstrate
AT primachenkove effectofmicrowaveelectromagneticradiationonthestructurephotoluminescenceandelectronicpropertiesofnanocrystallinesiliconfilmsonsiliconsubstrate
AT prokopenkoiv effectofmicrowaveelectromagneticradiationonthestructurephotoluminescenceandelectronicpropertiesofnanocrystallinesiliconfilmsonsiliconsubstrate
first_indexed 2023-10-18T20:31:19Z
last_indexed 2023-10-18T20:31:19Z
_version_ 1796150418985713664

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