Optimization of technological parameters of ohmic contact junctions for GaAs-AlGaAs-based transistor structures

за авторством Konakova, R.V., Milenin, V.V., Stovpovoi, M.A.
Опубліковано 2002

Heat-resistant ohmic and barrier contacts for GaAs-based microwave devices

за авторством Ivanov, V.N., Konakova, R.V., Milenin, V.V., Stovpovoi, M.A.
Опубліковано 2003

A universal automated complex for control and diagnostics of semiconductor devices and structures

за авторством Konakova, R.V., Rengevych, O.E., Kurakin, A.M., Kudryk, Ya.Ya.
Опубліковано 2002

Effect of weak magnetic fields treatment on photoluminescence of III-V single crystals

за авторством Konakova, R.V., Red’ko, S.M., Milenin, V.V., Red’ko, R.A.
Опубліковано 2014

Investigation of electrical c haracteristics of heteroepitaxial structures as a function of microrelief and manufacturing technology features

за авторством Dmitruk, N.L., Karimov, A.V., Konakova, R.V., Kudryk, Ya.Ya., Sachenko, A.V.
Опубліковано 2005

Temperature dependence of contact resistance of Au−Ti−Pd2Si−n⁺ -Si ohmic contacts

за авторством Belyaev, A.E., Boltovets, N.S., Konakova, R.V., Kudryk, Ya.Ya., Sachenko, A.V., Sheremet, V.N.
Опубліковано 2010

Influence of pulse magnetic fields treatment on optical properties of GaAs based films

за авторством Konakova, R.V., Sosnova, M.V., Red’ko, S.M., Milenin, V.V., Red’ko, R.A.
Опубліковано 2014

The features of structural-impurity ordering of interfaces in Ta₂O₅-p-Si heterostructures (exposed to microwave pretreatment and aging) induced by further microwave treatment

за авторством Kolyadina, E.Yu., Konakova, R.V., Matveeva, L.A., Mitin, V.F., Shynkarenko, V.V., Atanassova, E.
Опубліковано 2008

Properties of SiO₂-GaAs and Au-Ti-SiO₂-GaAs structures used in production of transmission lines

за авторством Boltovets, N.S., Kashin, G.N., Konakova, R.V., Lyapin, V.G., Milenin, V.V., Soloviev, E.A.
Опубліковано 2002

Optically controlled 2D tunnelling in GaAs delta-doped p-n junction

за авторством Vitusevich, S. A., Forster, A., Belyaev, A. E., Glavin, B. A., Indlekofer, K. M., Luth, H., Konakova, R. V.
Опубліковано 1999

Interface features of SiO₂/SiC heterostructures according to methods for producing the SiO₂ thin films

за авторством Bacherikov, Yu.Yu., Boltovets, N.S., Konakova, R.V., Kolyadina, E.Yu., Ledn’ova, T.M., Okhrimenko, O.B.
Опубліковано 2012

Effect of microwave radiation on optical transmission spectra in SiO₂/SiC structures

за авторством Bacherikov, Yu.Yu., Konakova, R.V., Kolyadina, E.Yu., Kocherov, A.N., Okhrimenko, O.B., Svetlichnyi, A.M.
Опубліковано 2002

Оптичнi властивостi епiтаксiйних плiвок GaN, що перебували пiд дiєю мiкрохвильового опромiнення

за авторством Belyaev, A. E., Klyui, N. I., Konakova, R. V., Luk’yanov, A. M., Sveshnikov, Yu. M., Klyui, A. M.
Опубліковано 2018

Technology and experimental studies of contacts for microwave diodes based on interstitial phases

за авторством Boltovets, N.S., Ivanov, V.N., Konakova, R.V., Kurakin, A.M., Milenin, V.V., Soloviev, E.A., Verimeychenko, G.M.
Опубліковано 2001

X-ray diffraction study of deformation state in InGaN/GaN multilayered structures

за авторством Kladko, V.P., Kuchuk, A.V., Safryuk, N.V., Machulin, V.F., Belyaev, A.E., Konakova, R.V., Yavich, B.S.
Опубліковано 2010

Some aspects of thermal resistance measurement technique for IMPATT and light-emitting diodes

за авторством Belyaev, A.E., Boltovets, N.S., Konakova, R.V., Kudryk, Ya.Ya., Sorokin, V.M., Sheremet, V.N., Shynkarenko, V.V.
Опубліковано 2011

Heat tolerance of titanium boride and titanium nitride contacts to gallium arsenide

за авторством Venger, Ye.F., Milenin, V.V., Ermolovich, I.B., Konakova, R.V., Voitsikhovskiy, D.I., Hotovy, I., Ivanov, V. N.
Опубліковано 1999

Modification of properties of the glass-Si₃N₄-Si-SiO₂ structure at laser treatment

за авторством Konakova, R.V., Kladko, V.P., Lytvyn, O.S., Okhrimenko, O.B., Konoplev, B.G., Svetlichnyi, A.M., Lissotschenko, V.N.
Опубліковано 2009

Comprehensive studies of defect production and strained states in silicon epitaxial layers and device structures based on them

за авторством Boltovets, N.S., Voitsikhovskyi, D.I., Konakova, R.V., Milenin, V.V., Makara, V.A., Rudenko, O.V., Mel’nichenko, M.M.
Опубліковано 2001

Technique and setup for diagnostics of p-n junction to case thermal resistance in high-power gallium nitride LEDs

за авторством Sorokin, V.M., Konakova, R.V., Kudryk, Ya.Ya., Zinovchuk, A.V., Bigun, R.I., Kudryk, R.Ya., Shynkarenko, V.V.
Опубліковано 2012