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Configuration interaction in delta-doped heterostructures

Configuration interaction in delta-doped heterostructures

We analyze the tunnel coupling between an impurity state located in a δ-layer and the 2D delocalized states in the quantum well (QW) located at a few nanometers from the δ-layer. The problem is formulated in terms of Anderson–Fano model as configuration interaction between the carrier bound state...

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Bibliographic Details
Main Authors: Rozhansky, I.V., Averkiev, N.S., Lähderanta, E.
Format: Article
Language:English
Published: Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України 2013
Series:Физика низких температур
Subjects:
XIX Уральская международная зимняя школа по физике полупроводников
Online Access:http://dspace.nbuv.gov.ua/handle/123456789/118094
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http://dspace.nbuv.gov.ua/handle/123456789/118094

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