Configuration interaction in delta-doped heterostructures
We analyze the tunnel coupling between an impurity state located in a δ-layer and the 2D delocalized states in the quantum well (QW) located at a few nanometers from the δ-layer. The problem is formulated in terms of Anderson–Fano model as configuration interaction between the carrier bound state...
Збережено в:
| Видавець: | Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України |
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| Дата: | 2013 |
| Автори: | , , |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України
2013
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| Назва видання: | Физика низких температур |
| Теми: | |
| Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/118094 |
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| Цитувати: | Configuration interaction in delta-doped heterostructures / I.V. Rozhansky, N.S. Averkiev, E. Lähderanta // Физика низких температур. — 2013. — Т. 39, № 1. — С. 40–47. — Бібліогр.: 13 назв. — англ. |
Репозиторії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| Резюме: | We analyze the tunnel coupling between an impurity state located in a δ-layer and the 2D delocalized
states in the quantum well (QW) located at a few nanometers from the δ-layer. The problem is formulated in
terms of Anderson–Fano model as configuration interaction between the carrier bound state at the impurity
and the continuum of delocalized states in the QW. An effect of this interaction on the interband optical transitions
in the QW is analyzed. The results are discussed regarding the series of experiments on the GaAs
structures with a δ-Mn layer. |
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