Configuration interaction in delta-doped heterostructures
We analyze the tunnel coupling between an impurity state located in a δ-layer and the 2D delocalized states in the quantum well (QW) located at a few nanometers from the δ-layer. The problem is formulated in terms of Anderson–Fano model as configuration interaction between the carrier bound state...
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| Дата: | 2013 |
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| Автори: | , , |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України
2013
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| Назва видання: | Физика низких температур |
| Теми: | |
| Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/118094 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Configuration interaction in delta-doped heterostructures / I.V. Rozhansky, N.S. Averkiev, E. Lähderanta // Физика низких температур. — 2013. — Т. 39, № 1. — С. 40–47. — Бібліогр.: 13 назв. — англ. |
Репозиторії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
irk-123456789-118094 |
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dspace |
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irk-123456789-1180942017-05-29T03:03:27Z Configuration interaction in delta-doped heterostructures Rozhansky, I.V. Averkiev, N.S. Lähderanta, E. XIX Уральская международная зимняя школа по физике полупроводников We analyze the tunnel coupling between an impurity state located in a δ-layer and the 2D delocalized states in the quantum well (QW) located at a few nanometers from the δ-layer. The problem is formulated in terms of Anderson–Fano model as configuration interaction between the carrier bound state at the impurity and the continuum of delocalized states in the QW. An effect of this interaction on the interband optical transitions in the QW is analyzed. The results are discussed regarding the series of experiments on the GaAs structures with a δ-Mn layer. 2013 Article Configuration interaction in delta-doped heterostructures / I.V. Rozhansky, N.S. Averkiev, E. Lähderanta // Физика низких температур. — 2013. — Т. 39, № 1. — С. 40–47. — Бібліогр.: 13 назв. — англ. 0132-6414 PACS: 75.75.–c, 78.55.Cr, 78.67.De http://dspace.nbuv.gov.ua/handle/123456789/118094 en Физика низких температур Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| language |
English |
| topic |
XIX Уральская международная зимняя школа по физике полупроводников XIX Уральская международная зимняя школа по физике полупроводников |
| spellingShingle |
XIX Уральская международная зимняя школа по физике полупроводников XIX Уральская международная зимняя школа по физике полупроводников Rozhansky, I.V. Averkiev, N.S. Lähderanta, E. Configuration interaction in delta-doped heterostructures Физика низких температур |
| description |
We analyze the tunnel coupling between an impurity state located in a δ-layer and the 2D delocalized
states in the quantum well (QW) located at a few nanometers from the δ-layer. The problem is formulated in
terms of Anderson–Fano model as configuration interaction between the carrier bound state at the impurity
and the continuum of delocalized states in the QW. An effect of this interaction on the interband optical transitions
in the QW is analyzed. The results are discussed regarding the series of experiments on the GaAs
structures with a δ-Mn layer. |
| format |
Article |
| author |
Rozhansky, I.V. Averkiev, N.S. Lähderanta, E. |
| author_facet |
Rozhansky, I.V. Averkiev, N.S. Lähderanta, E. |
| author_sort |
Rozhansky, I.V. |
| title |
Configuration interaction in delta-doped heterostructures |
| title_short |
Configuration interaction in delta-doped heterostructures |
| title_full |
Configuration interaction in delta-doped heterostructures |
| title_fullStr |
Configuration interaction in delta-doped heterostructures |
| title_full_unstemmed |
Configuration interaction in delta-doped heterostructures |
| title_sort |
configuration interaction in delta-doped heterostructures |
| publisher |
Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України |
| publishDate |
2013 |
| topic_facet |
XIX Уральская международная зимняя школа по физике полупроводников |
| url |
http://dspace.nbuv.gov.ua/handle/123456789/118094 |
| citation_txt |
Configuration interaction in delta-doped heterostructures / I.V. Rozhansky, N.S. Averkiev, E. Lähderanta // Физика низких температур. — 2013. — Т. 39, № 1. — С. 40–47. — Бібліогр.: 13 назв. — англ. |
| series |
Физика низких температур |
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AT rozhanskyiv configurationinteractionindeltadopedheterostructures AT averkievns configurationinteractionindeltadopedheterostructures AT lahderantae configurationinteractionindeltadopedheterostructures |
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2023-10-18T20:31:19Z |
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2023-10-18T20:31:19Z |
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1796150419410386944 |