Exciton effects in band-edge electroluminescence of silicon barrier structures
A theoretical analysis of the band-edge electroluminescence efficiency in silicon diodes and p-i-n-structures has been made. We have shown that maximal possible efficiency can achieve 10 % both at room and liquid nitrogen temperatures. Maximal values of the efficiency are restricted by the interband...
Збережено в:
| Дата: | 2004 |
|---|---|
| Автори: | , , , , , |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2004
|
| Назва видання: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/118104 |
| Теги: |
Додати тег
Немає тегів, Будьте першим, хто поставить тег для цього запису!
|
| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Exciton effects in band-edge electroluminescence of silicon barrier structures / A.V. Sachenko, A.P. Gorban, D.V. Korbutyak, V.P. Kostylyov, Yu.V. Kryuchenko, V.V. Chernenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2004. — Т. 7, № 1. — С. 1-7. — Бібліогр.: 20 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
irk-123456789-118104 |
|---|---|
| record_format |
dspace |
| spelling |
irk-123456789-1181042017-05-29T03:03:18Z Exciton effects in band-edge electroluminescence of silicon barrier structures Sachenko, A.V. Gorban, A.P. Korbutyak, D.V. Kostylyov, V.P. Kryuchenko, Yu.V. Chernenko, V.V. A theoretical analysis of the band-edge electroluminescence efficiency in silicon diodes and p-i-n-structures has been made. We have shown that maximal possible efficiency can achieve 10 % both at room and liquid nitrogen temperatures. Maximal values of the efficiency are restricted by the interband Auger recombination process. It is found that electroluminescence efficiency decreases rapidly with the decrease of characteristic Shockley- Reed-Hall nonradiative lifetime for minority carriers. It is shown that even at room temperatures the main contribution into the edge electroluminescence in silicon barrier structures is given by excitonic effects. Dark I-V characteristics of directly biased silicon diodes measured both at room and nitrogen temperatures are used to explain anomalous temperature dependencies of silicon diode electroluminescence. 2004 Article Exciton effects in band-edge electroluminescence of silicon barrier structures / A.V. Sachenko, A.P. Gorban, D.V. Korbutyak, V.P. Kostylyov, Yu.V. Kryuchenko, V.V. Chernenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2004. — Т. 7, № 1. — С. 1-7. — Бібліогр.: 20 назв. — англ. 1560-8034 PACS: 71.35.-y, 72.20.jv, 78.20.-e, 78.60.-b, 78.60.Fi http://dspace.nbuv.gov.ua/handle/123456789/118104 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| language |
English |
| description |
A theoretical analysis of the band-edge electroluminescence efficiency in silicon diodes and p-i-n-structures has been made. We have shown that maximal possible efficiency can achieve 10 % both at room and liquid nitrogen temperatures. Maximal values of the efficiency are restricted by the interband Auger recombination process. It is found that electroluminescence efficiency decreases rapidly with the decrease of characteristic Shockley- Reed-Hall nonradiative lifetime for minority carriers. It is shown that even at room temperatures the main contribution into the edge electroluminescence in silicon barrier structures is given by excitonic effects. Dark I-V characteristics of directly biased silicon diodes measured both at room and nitrogen temperatures are used to explain anomalous temperature dependencies of silicon diode electroluminescence. |
| format |
Article |
| author |
Sachenko, A.V. Gorban, A.P. Korbutyak, D.V. Kostylyov, V.P. Kryuchenko, Yu.V. Chernenko, V.V. |
| spellingShingle |
Sachenko, A.V. Gorban, A.P. Korbutyak, D.V. Kostylyov, V.P. Kryuchenko, Yu.V. Chernenko, V.V. Exciton effects in band-edge electroluminescence of silicon barrier structures Semiconductor Physics Quantum Electronics & Optoelectronics |
| author_facet |
Sachenko, A.V. Gorban, A.P. Korbutyak, D.V. Kostylyov, V.P. Kryuchenko, Yu.V. Chernenko, V.V. |
| author_sort |
Sachenko, A.V. |
| title |
Exciton effects in band-edge electroluminescence of silicon barrier structures |
| title_short |
Exciton effects in band-edge electroluminescence of silicon barrier structures |
| title_full |
Exciton effects in band-edge electroluminescence of silicon barrier structures |
| title_fullStr |
Exciton effects in band-edge electroluminescence of silicon barrier structures |
| title_full_unstemmed |
Exciton effects in band-edge electroluminescence of silicon barrier structures |
| title_sort |
exciton effects in band-edge electroluminescence of silicon barrier structures |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| publishDate |
2004 |
| url |
http://dspace.nbuv.gov.ua/handle/123456789/118104 |
| citation_txt |
Exciton effects in band-edge electroluminescence of silicon barrier structures / A.V. Sachenko, A.P. Gorban, D.V. Korbutyak, V.P. Kostylyov, Yu.V. Kryuchenko, V.V. Chernenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2004. — Т. 7, № 1. — С. 1-7. — Бібліогр.: 20 назв. — англ. |
| series |
Semiconductor Physics Quantum Electronics & Optoelectronics |
| work_keys_str_mv |
AT sachenkoav excitoneffectsinbandedgeelectroluminescenceofsiliconbarrierstructures AT gorbanap excitoneffectsinbandedgeelectroluminescenceofsiliconbarrierstructures AT korbutyakdv excitoneffectsinbandedgeelectroluminescenceofsiliconbarrierstructures AT kostylyovvp excitoneffectsinbandedgeelectroluminescenceofsiliconbarrierstructures AT kryuchenkoyuv excitoneffectsinbandedgeelectroluminescenceofsiliconbarrierstructures AT chernenkovv excitoneffectsinbandedgeelectroluminescenceofsiliconbarrierstructures |
| first_indexed |
2023-10-18T20:31:21Z |
| last_indexed |
2023-10-18T20:31:21Z |
| _version_ |
1796150420471545856 |