2025-02-23T06:40:32-05:00 DEBUG: VuFindSearch\Backend\Solr\Connector: Query fl=%2A&wt=json&json.nl=arrarr&q=id%3A%22irk-123456789-118107%22&qt=morelikethis&rows=5
2025-02-23T06:40:32-05:00 DEBUG: VuFindSearch\Backend\Solr\Connector: => GET http://localhost:8983/solr/biblio/select?fl=%2A&wt=json&json.nl=arrarr&q=id%3A%22irk-123456789-118107%22&qt=morelikethis&rows=5
2025-02-23T06:40:32-05:00 DEBUG: VuFindSearch\Backend\Solr\Connector: <= 200 OK
2025-02-23T06:40:32-05:00 DEBUG: Deserialized SOLR response
Charge transition phenomena in the heterostructure crystalline Si-Bi-amorphous film Ge₃₃As₁₂Se₅₅
Ge₃₃As₁₂Se₅₅-Si(n) heterostructures with modified by bismuth atoms transition layer were obtained by the discrete thermal evaporation method. Described are formation and investigation methods for these heterostructures. The mechanism of charge transmission in this heterostructures was ascertained. I...
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| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2004
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| Series: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Online Access: | http://dspace.nbuv.gov.ua/handle/123456789/118107 |
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