Nucleation, growth and transformation of microdefects in FZ-Si
The physical model of microdefects formation in dislocation-free FZ-Si single crystals is offered. Experimental results and theoretical data allows to approve that recombination between vacancy and self-interstitials at high temperatures is hampered by an entropy barrier. Established is that the pro...
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Дата: | 2004 |
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Автори: | , |
Формат: | Стаття |
Мова: | English |
Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2004
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Назва видання: | Semiconductor Physics Quantum Electronics & Optoelectronics |
Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/118108 |
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Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
Цитувати: | Nucleation, growth and transformation of microdefects in FZ-Si / V.I. Talanin, I.E. Talanin // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2004. — Т. 7, № 1. — С. 16-21. — Бібліогр.: 50 назв. — англ. |
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irk-123456789-1181082017-05-29T03:03:52Z Nucleation, growth and transformation of microdefects in FZ-Si Talanin, V.I. Talanin, I.E. The physical model of microdefects formation in dislocation-free FZ-Si single crystals is offered. Experimental results and theoretical data allows to approve that recombination between vacancy and self-interstitials at high temperatures is hampered by an entropy barrier. Established is that the process of microdefects formation in silicon proceeds simultaneously by two independent mechanisms: the vacancy and interstitial ones. 2004 Article Nucleation, growth and transformation of microdefects in FZ-Si / V.I. Talanin, I.E. Talanin // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2004. — Т. 7, № 1. — С. 16-21. — Бібліогр.: 50 назв. — англ. 1560-8034 PACS: 61.72.Bb; 61.72.Ji; 61.72.Yx http://dspace.nbuv.gov.ua/handle/123456789/118108 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
collection |
DSpace DC |
language |
English |
description |
The physical model of microdefects formation in dislocation-free FZ-Si single crystals is offered. Experimental results and theoretical data allows to approve that recombination between vacancy and self-interstitials at high temperatures is hampered by an entropy barrier. Established is that the process of microdefects formation in silicon proceeds simultaneously by two independent mechanisms: the vacancy and interstitial ones. |
format |
Article |
author |
Talanin, V.I. Talanin, I.E. |
spellingShingle |
Talanin, V.I. Talanin, I.E. Nucleation, growth and transformation of microdefects in FZ-Si Semiconductor Physics Quantum Electronics & Optoelectronics |
author_facet |
Talanin, V.I. Talanin, I.E. |
author_sort |
Talanin, V.I. |
title |
Nucleation, growth and transformation of microdefects in FZ-Si |
title_short |
Nucleation, growth and transformation of microdefects in FZ-Si |
title_full |
Nucleation, growth and transformation of microdefects in FZ-Si |
title_fullStr |
Nucleation, growth and transformation of microdefects in FZ-Si |
title_full_unstemmed |
Nucleation, growth and transformation of microdefects in FZ-Si |
title_sort |
nucleation, growth and transformation of microdefects in fz-si |
publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
publishDate |
2004 |
url |
http://dspace.nbuv.gov.ua/handle/123456789/118108 |
citation_txt |
Nucleation, growth and transformation of microdefects in FZ-Si / V.I. Talanin, I.E. Talanin // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2004. — Т. 7, № 1. — С. 16-21. — Бібліогр.: 50 назв. — англ. |
series |
Semiconductor Physics Quantum Electronics & Optoelectronics |
work_keys_str_mv |
AT talaninvi nucleationgrowthandtransformationofmicrodefectsinfzsi AT talaninie nucleationgrowthandtransformationofmicrodefectsinfzsi |
first_indexed |
2023-10-18T20:31:21Z |
last_indexed |
2023-10-18T20:31:21Z |
_version_ |
1796150420894121984 |