Nucleation, growth and transformation of microdefects in FZ-Si

The physical model of microdefects formation in dislocation-free FZ-Si single crystals is offered. Experimental results and theoretical data allows to approve that recombination between vacancy and self-interstitials at high temperatures is hampered by an entropy barrier. Established is that the pro...

Повний опис

Збережено в:
Бібліографічні деталі
Дата:2004
Автори: Talanin, V.I., Talanin, I.E.
Формат: Стаття
Мова:English
Опубліковано: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2004
Назва видання:Semiconductor Physics Quantum Electronics & Optoelectronics
Онлайн доступ:http://dspace.nbuv.gov.ua/handle/123456789/118108
Теги: Додати тег
Немає тегів, Будьте першим, хто поставить тег для цього запису!
Назва журналу:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Цитувати:Nucleation, growth and transformation of microdefects in FZ-Si / V.I. Talanin, I.E. Talanin // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2004. — Т. 7, № 1. — С. 16-21. — Бібліогр.: 50 назв. — англ.

Репозитарії

Digital Library of Periodicals of National Academy of Sciences of Ukraine
id irk-123456789-118108
record_format dspace
spelling irk-123456789-1181082017-05-29T03:03:52Z Nucleation, growth and transformation of microdefects in FZ-Si Talanin, V.I. Talanin, I.E. The physical model of microdefects formation in dislocation-free FZ-Si single crystals is offered. Experimental results and theoretical data allows to approve that recombination between vacancy and self-interstitials at high temperatures is hampered by an entropy barrier. Established is that the process of microdefects formation in silicon proceeds simultaneously by two independent mechanisms: the vacancy and interstitial ones. 2004 Article Nucleation, growth and transformation of microdefects in FZ-Si / V.I. Talanin, I.E. Talanin // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2004. — Т. 7, № 1. — С. 16-21. — Бібліогр.: 50 назв. — англ. 1560-8034 PACS: 61.72.Bb; 61.72.Ji; 61.72.Yx http://dspace.nbuv.gov.ua/handle/123456789/118108 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
institution Digital Library of Periodicals of National Academy of Sciences of Ukraine
collection DSpace DC
language English
description The physical model of microdefects formation in dislocation-free FZ-Si single crystals is offered. Experimental results and theoretical data allows to approve that recombination between vacancy and self-interstitials at high temperatures is hampered by an entropy barrier. Established is that the process of microdefects formation in silicon proceeds simultaneously by two independent mechanisms: the vacancy and interstitial ones.
format Article
author Talanin, V.I.
Talanin, I.E.
spellingShingle Talanin, V.I.
Talanin, I.E.
Nucleation, growth and transformation of microdefects in FZ-Si
Semiconductor Physics Quantum Electronics & Optoelectronics
author_facet Talanin, V.I.
Talanin, I.E.
author_sort Talanin, V.I.
title Nucleation, growth and transformation of microdefects in FZ-Si
title_short Nucleation, growth and transformation of microdefects in FZ-Si
title_full Nucleation, growth and transformation of microdefects in FZ-Si
title_fullStr Nucleation, growth and transformation of microdefects in FZ-Si
title_full_unstemmed Nucleation, growth and transformation of microdefects in FZ-Si
title_sort nucleation, growth and transformation of microdefects in fz-si
publisher Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
publishDate 2004
url http://dspace.nbuv.gov.ua/handle/123456789/118108
citation_txt Nucleation, growth and transformation of microdefects in FZ-Si / V.I. Talanin, I.E. Talanin // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2004. — Т. 7, № 1. — С. 16-21. — Бібліогр.: 50 назв. — англ.
series Semiconductor Physics Quantum Electronics & Optoelectronics
work_keys_str_mv AT talaninvi nucleationgrowthandtransformationofmicrodefectsinfzsi
AT talaninie nucleationgrowthandtransformationofmicrodefectsinfzsi
first_indexed 2023-10-18T20:31:21Z
last_indexed 2023-10-18T20:31:21Z
_version_ 1796150420894121984