The simple approach to determination of active diffused phosphorus density in silicon
The diffusion of Phosphorus in silicon using a POCl₃ source has been considered. In the base of Fair-Tsai model of P-diffusion an empirical equation for calculation of active diffused phosphorus density (Qel), is proposed. In this equation, a relationship between (Qel), diffusion time, temperature a...
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| Дата: | 2004 |
|---|---|
| Автор: | |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2004
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| Назва видання: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/118109 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | The simple approach to determination of active diffused phosphorus density in silicon / M. Sasani // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2004. — Т. 7, № 1. — С. 22-25. — Бібліогр.: 20 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
irk-123456789-118109 |
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dspace |
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irk-123456789-1181092017-05-29T03:05:22Z The simple approach to determination of active diffused phosphorus density in silicon Sasani, M. The diffusion of Phosphorus in silicon using a POCl₃ source has been considered. In the base of Fair-Tsai model of P-diffusion an empirical equation for calculation of active diffused phosphorus density (Qel), is proposed. In this equation, a relationship between (Qel), diffusion time, temperature and junction depth of P-diffused layer (Xj), is presented. The value of sheet resistance (Rs), which is taken from theoretical determination at 900°C, has a good agreement with experimental result. 2004 Article The simple approach to determination of active diffused phosphorus density in silicon / M. Sasani // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2004. — Т. 7, № 1. — С. 22-25. — Бібліогр.: 20 назв. — англ. 1560-8034 PACS: 61.72.Tt, 66.30.Lw http://dspace.nbuv.gov.ua/handle/123456789/118109 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| language |
English |
| description |
The diffusion of Phosphorus in silicon using a POCl₃ source has been considered. In the base of Fair-Tsai model of P-diffusion an empirical equation for calculation of active diffused phosphorus density (Qel), is proposed. In this equation, a relationship between (Qel), diffusion time, temperature and junction depth of P-diffused layer (Xj), is presented. The value of sheet resistance (Rs), which is taken from theoretical determination at 900°C, has a good agreement with experimental result. |
| format |
Article |
| author |
Sasani, M. |
| spellingShingle |
Sasani, M. The simple approach to determination of active diffused phosphorus density in silicon Semiconductor Physics Quantum Electronics & Optoelectronics |
| author_facet |
Sasani, M. |
| author_sort |
Sasani, M. |
| title |
The simple approach to determination of active diffused phosphorus density in silicon |
| title_short |
The simple approach to determination of active diffused phosphorus density in silicon |
| title_full |
The simple approach to determination of active diffused phosphorus density in silicon |
| title_fullStr |
The simple approach to determination of active diffused phosphorus density in silicon |
| title_full_unstemmed |
The simple approach to determination of active diffused phosphorus density in silicon |
| title_sort |
simple approach to determination of active diffused phosphorus density in silicon |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| publishDate |
2004 |
| url |
http://dspace.nbuv.gov.ua/handle/123456789/118109 |
| citation_txt |
The simple approach to determination of active diffused phosphorus density in silicon / M. Sasani // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2004. — Т. 7, № 1. — С. 22-25. — Бібліогр.: 20 назв. — англ. |
| series |
Semiconductor Physics Quantum Electronics & Optoelectronics |
| work_keys_str_mv |
AT sasanim thesimpleapproachtodeterminationofactivediffusedphosphorusdensityinsilicon AT sasanim simpleapproachtodeterminationofactivediffusedphosphorusdensityinsilicon |
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2023-10-18T20:31:21Z |
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2023-10-18T20:31:21Z |
| _version_ |
1796150420998979584 |