2025-02-23T05:13:19-05:00 DEBUG: VuFindSearch\Backend\Solr\Connector: Query fl=%2A&wt=json&json.nl=arrarr&q=id%3A%22irk-123456789-118109%22&qt=morelikethis&rows=5
2025-02-23T05:13:19-05:00 DEBUG: VuFindSearch\Backend\Solr\Connector: => GET http://localhost:8983/solr/biblio/select?fl=%2A&wt=json&json.nl=arrarr&q=id%3A%22irk-123456789-118109%22&qt=morelikethis&rows=5
2025-02-23T05:13:19-05:00 DEBUG: VuFindSearch\Backend\Solr\Connector: <= 200 OK
2025-02-23T05:13:19-05:00 DEBUG: Deserialized SOLR response
The simple approach to determination of active diffused phosphorus density in silicon

The simple approach to determination of active diffused phosphorus density in silicon

The diffusion of Phosphorus in silicon using a POCl₃ source has been considered. In the base of Fair-Tsai model of P-diffusion an empirical equation for calculation of active diffused phosphorus density (Qel), is proposed. In this equation, a relationship between (Qel), diffusion time, temperature a...

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Bibliographic Details
Main Author: Sasani, M.
Format: Article
Language:English
Published: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2004
Series:Semiconductor Physics Quantum Electronics & Optoelectronics
Online Access:http://dspace.nbuv.gov.ua/handle/123456789/118109
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2025-02-23T05:13:19-05:00 DEBUG: VuFindSearch\Backend\Solr\Connector: Query fl=%2A&rows=40&rows=5&wt=json&json.nl=arrarr&q=id%3A%22irk-123456789-118109%22&qt=morelikethis
2025-02-23T05:13:19-05:00 DEBUG: VuFindSearch\Backend\Solr\Connector: => GET http://localhost:8983/solr/biblio/select?fl=%2A&rows=40&rows=5&wt=json&json.nl=arrarr&q=id%3A%22irk-123456789-118109%22&qt=morelikethis
2025-02-23T05:13:19-05:00 DEBUG: VuFindSearch\Backend\Solr\Connector: <= 200 OK
2025-02-23T05:13:19-05:00 DEBUG: Deserialized SOLR response

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