Dislocations as internal sources of infrared radiation in crystals subjected to ultrasonic influence
We have carried out a systematic study of mercury cadmium telluride crystals subjected to the high-frequency and high-intensity ultrasonic influence. The charge carrier transport parameters were determined from the Hall coefficient and conductivity measurements. Temperature dependences of the ele...
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| Видавець: | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
|---|---|
| Дата: | 2007 |
| Автори: | , , |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2007
|
| Назва видання: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/118124 |
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| Цитувати: | Dislocations as internal sources of infrared radiation in crystals subjected to ultrasonic influence / R.K. Savkina, A.B. Smirnov, F.F. Sizov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2007. — Т. 10, № 3. — С. 61-64. — Бібліогр.: 15 назв. — англ. |
Репозиторії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
irk-123456789-118124 |
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dspace |
| spelling |
irk-123456789-1181242017-05-29T03:04:50Z Dislocations as internal sources of infrared radiation in crystals subjected to ultrasonic influence Savkina, R.K. Smirnov, A.B. Sizov, F.F. We have carried out a systematic study of mercury cadmium telluride crystals subjected to the high-frequency and high-intensity ultrasonic influence. The charge carrier transport parameters were determined from the Hall coefficient and conductivity measurements. Temperature dependences of the electron concentration without and during the ultrasonic load were calculated. A good agreement between the experimental and theoretical data was obtained. A model of internal source of the infrared radiation associated with a dislocation is proposed for the explanation of sonically stimulated effects in the semiconductor system. We have considered a possibility of the thermooptical excitation in Hg₁₋xCdxTe alloys during sonication, which can result in the nonequilibrium charge carrier generation and changes in electrical parameters of the material. 2007 Article Dislocations as internal sources of infrared radiation in crystals subjected to ultrasonic influence / R.K. Savkina, A.B. Smirnov, F.F. Sizov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2007. — Т. 10, № 3. — С. 61-64. — Бібліогр.: 15 назв. — англ. 1560-8034 PACS 07.57.Hm, 43.35.+d, 61.72.Lk, 73.61.Ga, 73.50.Jt http://dspace.nbuv.gov.ua/handle/123456789/118124 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| language |
English |
| description |
We have carried out a systematic study of mercury cadmium telluride crystals
subjected to the high-frequency and high-intensity ultrasonic influence. The charge carrier
transport parameters were determined from the Hall coefficient and conductivity
measurements. Temperature dependences of the electron concentration without and during
the ultrasonic load were calculated. A good agreement between the experimental and
theoretical data was obtained. A model of internal source of the infrared radiation
associated with a dislocation is proposed for the explanation of sonically stimulated effects in the semiconductor system. We have considered a possibility of the thermooptical excitation in Hg₁₋xCdxTe alloys during sonication, which can result in the nonequilibrium
charge carrier generation and changes in electrical parameters of the material. |
| format |
Article |
| author |
Savkina, R.K. Smirnov, A.B. Sizov, F.F. |
| spellingShingle |
Savkina, R.K. Smirnov, A.B. Sizov, F.F. Dislocations as internal sources of infrared radiation in crystals subjected to ultrasonic influence Semiconductor Physics Quantum Electronics & Optoelectronics |
| author_facet |
Savkina, R.K. Smirnov, A.B. Sizov, F.F. |
| author_sort |
Savkina, R.K. |
| title |
Dislocations as internal sources of infrared radiation in crystals subjected to ultrasonic influence |
| title_short |
Dislocations as internal sources of infrared radiation in crystals subjected to ultrasonic influence |
| title_full |
Dislocations as internal sources of infrared radiation in crystals subjected to ultrasonic influence |
| title_fullStr |
Dislocations as internal sources of infrared radiation in crystals subjected to ultrasonic influence |
| title_full_unstemmed |
Dislocations as internal sources of infrared radiation in crystals subjected to ultrasonic influence |
| title_sort |
dislocations as internal sources of infrared radiation in crystals subjected to ultrasonic influence |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| publishDate |
2007 |
| url |
http://dspace.nbuv.gov.ua/handle/123456789/118124 |
| citation_txt |
Dislocations as internal sources of infrared radiation in crystals subjected to ultrasonic influence / R.K. Savkina, A.B. Smirnov, F.F. Sizov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2007. — Т. 10, № 3. — С. 61-64. — Бібліогр.: 15 назв. — англ. |
| series |
Semiconductor Physics Quantum Electronics & Optoelectronics |
| work_keys_str_mv |
AT savkinark dislocationsasinternalsourcesofinfraredradiationincrystalssubjectedtoultrasonicinfluence AT smirnovab dislocationsasinternalsourcesofinfraredradiationincrystalssubjectedtoultrasonicinfluence AT sizovff dislocationsasinternalsourcesofinfraredradiationincrystalssubjectedtoultrasonicinfluence |
| first_indexed |
2023-10-18T20:31:23Z |
| last_indexed |
2023-10-18T20:31:23Z |
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