Periodic subsurface structures in GaAs formed by spatially modulated nanosecond pulse laser irradiation
We used the method of nets to calculate the thermoelastic stresses on the GaAs surface caused by a non-destructive nanosecond pulse laser irradiation (λ = 0.532 µm) with diffraction spatial intensity modulation from a shield with rectangular cut. The structure of irradiated subsurface layers of s...
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| Дата: | 2007 |
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| Автори: | , , , |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2007
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| Назва видання: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/118129 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Periodic subsurface structures in GaAs formed by spatially modulated nanosecond pulse laser irradiation / D.S. Moscal, L.L. Fedorenko, M.M. Yusupov, M.M. Golodenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2007. — Т. 10, № 3. — С. 80-83. — Бібліогр.: 14 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
irk-123456789-118129 |
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| record_format |
dspace |
| spelling |
irk-123456789-1181292017-05-29T03:05:21Z Periodic subsurface structures in GaAs formed by spatially modulated nanosecond pulse laser irradiation Moscal, D.S. Fedorenko, L.L. Yusupov, M.M. Golodenko, M.M. We used the method of nets to calculate the thermoelastic stresses on the GaAs surface caused by a non-destructive nanosecond pulse laser irradiation (λ = 0.532 µm) with diffraction spatial intensity modulation from a shield with rectangular cut. The structure of irradiated subsurface layers of samples was studied by the AFM method. A periodic islet structure formed in the process of diffusive redistribution of defects was revealed by the level-by-level chemical etching. 2007 Article Periodic subsurface structures in GaAs formed by spatially modulated nanosecond pulse laser irradiation / D.S. Moscal, L.L. Fedorenko, M.M. Yusupov, M.M. Golodenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2007. — Т. 10, № 3. — С. 80-83. — Бібліогр.: 14 назв. — англ. 1560-8034 PACS 71.10.-W http://dspace.nbuv.gov.ua/handle/123456789/118129 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| language |
English |
| description |
We used the method of nets to calculate the thermoelastic stresses on the GaAs
surface caused by a non-destructive nanosecond pulse laser irradiation (λ = 0.532 µm)
with diffraction spatial intensity modulation from a shield with rectangular cut. The
structure of irradiated subsurface layers of samples was studied by the AFM method. A
periodic islet structure formed in the process of diffusive redistribution of defects was
revealed by the level-by-level chemical etching. |
| format |
Article |
| author |
Moscal, D.S. Fedorenko, L.L. Yusupov, M.M. Golodenko, M.M. |
| spellingShingle |
Moscal, D.S. Fedorenko, L.L. Yusupov, M.M. Golodenko, M.M. Periodic subsurface structures in GaAs formed by spatially modulated nanosecond pulse laser irradiation Semiconductor Physics Quantum Electronics & Optoelectronics |
| author_facet |
Moscal, D.S. Fedorenko, L.L. Yusupov, M.M. Golodenko, M.M. |
| author_sort |
Moscal, D.S. |
| title |
Periodic subsurface structures in GaAs formed by spatially modulated nanosecond pulse laser irradiation |
| title_short |
Periodic subsurface structures in GaAs formed by spatially modulated nanosecond pulse laser irradiation |
| title_full |
Periodic subsurface structures in GaAs formed by spatially modulated nanosecond pulse laser irradiation |
| title_fullStr |
Periodic subsurface structures in GaAs formed by spatially modulated nanosecond pulse laser irradiation |
| title_full_unstemmed |
Periodic subsurface structures in GaAs formed by spatially modulated nanosecond pulse laser irradiation |
| title_sort |
periodic subsurface structures in gaas formed by spatially modulated nanosecond pulse laser irradiation |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| publishDate |
2007 |
| url |
http://dspace.nbuv.gov.ua/handle/123456789/118129 |
| citation_txt |
Periodic subsurface structures in GaAs formed by spatially modulated nanosecond pulse laser irradiation / D.S. Moscal, L.L. Fedorenko, M.M. Yusupov, M.M. Golodenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2007. — Т. 10, № 3. — С. 80-83. — Бібліогр.: 14 назв. — англ. |
| series |
Semiconductor Physics Quantum Electronics & Optoelectronics |
| work_keys_str_mv |
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| first_indexed |
2023-10-18T20:31:24Z |
| last_indexed |
2023-10-18T20:31:24Z |
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