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Estimation on frequency characteristics of a photodiode determined by the motion of charge carriers in the region of volume charge on the surface generation of carriers
We have estimated the frequency characteristics of a photodiode determined by the motion of charge carriers in the space-charge region on the surface generation of carriers in two extreme cases of unalloyed and evenly alloyed semiconductors. The expressions allowing the comparison of photodiodes...
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2007
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Series: | Semiconductor Physics Quantum Electronics & Optoelectronics |
Online Access: | http://dspace.nbuv.gov.ua/handle/123456789/118132 |
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irk-123456789-1181322017-05-29T03:04:09Z Estimation on frequency characteristics of a photodiode determined by the motion of charge carriers in the region of volume charge on the surface generation of carriers Danilyuk, A.I. Dobrovolskiy, Yu.G. We have estimated the frequency characteristics of a photodiode determined by the motion of charge carriers in the space-charge region on the surface generation of carriers in two extreme cases of unalloyed and evenly alloyed semiconductors. The expressions allowing the comparison of photodiodes with different constructions have been obtained. 2007 Article Estimation on frequency characteristics of a photodiode determined by the motion of charge carriers in the region of volume charge on the surface generation of carriers / A.I. Danilyuk, Yu.G. Dobrovolskiy // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2007. — Т. 10, № 3. — С. 91-94. — Бібліогр.: 7 назв. — англ. 1560-8034 PACS 85.60.Dw http://dspace.nbuv.gov.ua/handle/123456789/118132 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine |
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English |
description |
We have estimated the frequency characteristics of a photodiode determined
by the motion of charge carriers in the space-charge region on the surface generation of
carriers in two extreme cases of unalloyed and evenly alloyed semiconductors. The
expressions allowing the comparison of photodiodes with different constructions have
been obtained. |
format |
Article |
author |
Danilyuk, A.I. Dobrovolskiy, Yu.G. |
spellingShingle |
Danilyuk, A.I. Dobrovolskiy, Yu.G. Estimation on frequency characteristics of a photodiode determined by the motion of charge carriers in the region of volume charge on the surface generation of carriers Semiconductor Physics Quantum Electronics & Optoelectronics |
author_facet |
Danilyuk, A.I. Dobrovolskiy, Yu.G. |
author_sort |
Danilyuk, A.I. |
title |
Estimation on frequency characteristics of a photodiode determined by the motion of charge carriers in the region of volume charge on the surface generation of carriers |
title_short |
Estimation on frequency characteristics of a photodiode determined by the motion of charge carriers in the region of volume charge on the surface generation of carriers |
title_full |
Estimation on frequency characteristics of a photodiode determined by the motion of charge carriers in the region of volume charge on the surface generation of carriers |
title_fullStr |
Estimation on frequency characteristics of a photodiode determined by the motion of charge carriers in the region of volume charge on the surface generation of carriers |
title_full_unstemmed |
Estimation on frequency characteristics of a photodiode determined by the motion of charge carriers in the region of volume charge on the surface generation of carriers |
title_sort |
estimation on frequency characteristics of a photodiode determined by the motion of charge carriers in the region of volume charge on the surface generation of carriers |
publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
publishDate |
2007 |
url |
http://dspace.nbuv.gov.ua/handle/123456789/118132 |
citation_txt |
Estimation on frequency characteristics of a photodiode determined by the motion of charge carriers in the region of volume charge on the surface generation of carriers / A.I. Danilyuk, Yu.G. Dobrovolskiy // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2007. — Т. 10, № 3. — С. 91-94. — Бібліогр.: 7 назв. — англ. |
series |
Semiconductor Physics Quantum Electronics & Optoelectronics |
work_keys_str_mv |
AT danilyukai estimationonfrequencycharacteristicsofaphotodiodedeterminedbythemotionofchargecarriersintheregionofvolumechargeonthesurfacegenerationofcarriers AT dobrovolskiyyug estimationonfrequencycharacteristicsofaphotodiodedeterminedbythemotionofchargecarriersintheregionofvolumechargeonthesurfacegenerationofcarriers |
first_indexed |
2023-10-18T20:31:25Z |
last_indexed |
2023-10-18T20:31:25Z |
_version_ |
1796150423322624000 |