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Estimation on frequency characteristics of a photodiode determined by the motion of charge carriers in the region of volume charge on the surface generation of carriers

We have estimated the frequency characteristics of a photodiode determined by the motion of charge carriers in the space-charge region on the surface generation of carriers in two extreme cases of unalloyed and evenly alloyed semiconductors. The expressions allowing the comparison of photodiodes...

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Main Authors: Danilyuk, A.I., Dobrovolskiy, Yu.G.
Format: Article
Language:English
Published: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2007
Series:Semiconductor Physics Quantum Electronics & Optoelectronics
Online Access:http://dspace.nbuv.gov.ua/handle/123456789/118132
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spelling irk-123456789-1181322017-05-29T03:04:09Z Estimation on frequency characteristics of a photodiode determined by the motion of charge carriers in the region of volume charge on the surface generation of carriers Danilyuk, A.I. Dobrovolskiy, Yu.G. We have estimated the frequency characteristics of a photodiode determined by the motion of charge carriers in the space-charge region on the surface generation of carriers in two extreme cases of unalloyed and evenly alloyed semiconductors. The expressions allowing the comparison of photodiodes with different constructions have been obtained. 2007 Article Estimation on frequency characteristics of a photodiode determined by the motion of charge carriers in the region of volume charge on the surface generation of carriers / A.I. Danilyuk, Yu.G. Dobrovolskiy // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2007. — Т. 10, № 3. — С. 91-94. — Бібліогр.: 7 назв. — англ. 1560-8034 PACS 85.60.Dw http://dspace.nbuv.gov.ua/handle/123456789/118132 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
institution Digital Library of Periodicals of National Academy of Sciences of Ukraine
collection DSpace DC
language English
description We have estimated the frequency characteristics of a photodiode determined by the motion of charge carriers in the space-charge region on the surface generation of carriers in two extreme cases of unalloyed and evenly alloyed semiconductors. The expressions allowing the comparison of photodiodes with different constructions have been obtained.
format Article
author Danilyuk, A.I.
Dobrovolskiy, Yu.G.
spellingShingle Danilyuk, A.I.
Dobrovolskiy, Yu.G.
Estimation on frequency characteristics of a photodiode determined by the motion of charge carriers in the region of volume charge on the surface generation of carriers
Semiconductor Physics Quantum Electronics & Optoelectronics
author_facet Danilyuk, A.I.
Dobrovolskiy, Yu.G.
author_sort Danilyuk, A.I.
title Estimation on frequency characteristics of a photodiode determined by the motion of charge carriers in the region of volume charge on the surface generation of carriers
title_short Estimation on frequency characteristics of a photodiode determined by the motion of charge carriers in the region of volume charge on the surface generation of carriers
title_full Estimation on frequency characteristics of a photodiode determined by the motion of charge carriers in the region of volume charge on the surface generation of carriers
title_fullStr Estimation on frequency characteristics of a photodiode determined by the motion of charge carriers in the region of volume charge on the surface generation of carriers
title_full_unstemmed Estimation on frequency characteristics of a photodiode determined by the motion of charge carriers in the region of volume charge on the surface generation of carriers
title_sort estimation on frequency characteristics of a photodiode determined by the motion of charge carriers in the region of volume charge on the surface generation of carriers
publisher Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
publishDate 2007
url http://dspace.nbuv.gov.ua/handle/123456789/118132
citation_txt Estimation on frequency characteristics of a photodiode determined by the motion of charge carriers in the region of volume charge on the surface generation of carriers / A.I. Danilyuk, Yu.G. Dobrovolskiy // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2007. — Т. 10, № 3. — С. 91-94. — Бібліогр.: 7 назв. — англ.
series Semiconductor Physics Quantum Electronics & Optoelectronics
work_keys_str_mv AT danilyukai estimationonfrequencycharacteristicsofaphotodiodedeterminedbythemotionofchargecarriersintheregionofvolumechargeonthesurfacegenerationofcarriers
AT dobrovolskiyyug estimationonfrequencycharacteristicsofaphotodiodedeterminedbythemotionofchargecarriersintheregionofvolumechargeonthesurfacegenerationofcarriers
first_indexed 2023-10-18T20:31:25Z
last_indexed 2023-10-18T20:31:25Z
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