Properties of CdTe thin films prepared by hot wall epitaxy
CdTe thin films were grown on different substrates: BaF₂ (111), polished Si (100), SiO₂, bulk CdTe (110) and HgxCd₁₋xTe layers by hot wall epitaxy (HWE). Chosen temperature parame-ters and technological process of thin film fabrication provided the growth rate of about 0.03 mm/min. The current-volta...
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| Дата: | 2004 |
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| Автори: | , , , , , , |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2004
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| Назва видання: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/118156 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Properties of CdTe thin films prepared by hot wall epitaxy / Ye.O. Bilevych, A.I. Boka, L.O. Darchuk, J.V. Gumenjuk-Sichevska, F.F. Sizov, O. Boelling, B. Sulkio-Cleff // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2004. — Т. 7, № 2. — С. 129-132. — Бібліогр.: 15 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
irk-123456789-118156 |
|---|---|
| record_format |
dspace |
| spelling |
irk-123456789-1181562017-05-29T03:04:47Z Properties of CdTe thin films prepared by hot wall epitaxy Bilevych, Ye.O. Boka, A.I. Darchuk, L.O. Gumenjuk-Sichevska, J.V. Sizov, F.F. Boelling, O. Sulkio-Cleff, B. CdTe thin films were grown on different substrates: BaF₂ (111), polished Si (100), SiO₂, bulk CdTe (110) and HgxCd₁₋xTe layers by hot wall epitaxy (HWE). Chosen temperature parame-ters and technological process of thin film fabrication provided the growth rate of about 0.03 mm/min. The current-voltage characteristics and transmission spectra were measured. X-ray diffrac-tion data (XRD) measurements were carried out as well. 2004 Article Properties of CdTe thin films prepared by hot wall epitaxy / Ye.O. Bilevych, A.I. Boka, L.O. Darchuk, J.V. Gumenjuk-Sichevska, F.F. Sizov, O. Boelling, B. Sulkio-Cleff // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2004. — Т. 7, № 2. — С. 129-132. — Бібліогр.: 15 назв. — англ. 1560-8034 PACS: 68.55Ac; 81.15.-z; 73.61.Ga; 78.66.Hf http://dspace.nbuv.gov.ua/handle/123456789/118156 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| language |
English |
| description |
CdTe thin films were grown on different substrates: BaF₂ (111), polished Si (100), SiO₂, bulk CdTe (110) and HgxCd₁₋xTe layers by hot wall epitaxy (HWE). Chosen temperature parame-ters and technological process of thin film fabrication provided the growth rate of about 0.03 mm/min. The current-voltage characteristics and transmission spectra were measured. X-ray diffrac-tion data (XRD) measurements were carried out as well. |
| format |
Article |
| author |
Bilevych, Ye.O. Boka, A.I. Darchuk, L.O. Gumenjuk-Sichevska, J.V. Sizov, F.F. Boelling, O. Sulkio-Cleff, B. |
| spellingShingle |
Bilevych, Ye.O. Boka, A.I. Darchuk, L.O. Gumenjuk-Sichevska, J.V. Sizov, F.F. Boelling, O. Sulkio-Cleff, B. Properties of CdTe thin films prepared by hot wall epitaxy Semiconductor Physics Quantum Electronics & Optoelectronics |
| author_facet |
Bilevych, Ye.O. Boka, A.I. Darchuk, L.O. Gumenjuk-Sichevska, J.V. Sizov, F.F. Boelling, O. Sulkio-Cleff, B. |
| author_sort |
Bilevych, Ye.O. |
| title |
Properties of CdTe thin films prepared by hot wall epitaxy |
| title_short |
Properties of CdTe thin films prepared by hot wall epitaxy |
| title_full |
Properties of CdTe thin films prepared by hot wall epitaxy |
| title_fullStr |
Properties of CdTe thin films prepared by hot wall epitaxy |
| title_full_unstemmed |
Properties of CdTe thin films prepared by hot wall epitaxy |
| title_sort |
properties of cdte thin films prepared by hot wall epitaxy |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| publishDate |
2004 |
| url |
http://dspace.nbuv.gov.ua/handle/123456789/118156 |
| citation_txt |
Properties of CdTe thin films prepared by hot wall epitaxy / Ye.O. Bilevych, A.I. Boka, L.O. Darchuk, J.V. Gumenjuk-Sichevska, F.F. Sizov, O. Boelling, B. Sulkio-Cleff // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2004. — Т. 7, № 2. — С. 129-132. — Бібліогр.: 15 назв. — англ. |
| series |
Semiconductor Physics Quantum Electronics & Optoelectronics |
| work_keys_str_mv |
AT bilevychyeo propertiesofcdtethinfilmspreparedbyhotwallepitaxy AT bokaai propertiesofcdtethinfilmspreparedbyhotwallepitaxy AT darchuklo propertiesofcdtethinfilmspreparedbyhotwallepitaxy AT gumenjuksichevskajv propertiesofcdtethinfilmspreparedbyhotwallepitaxy AT sizovff propertiesofcdtethinfilmspreparedbyhotwallepitaxy AT boellingo propertiesofcdtethinfilmspreparedbyhotwallepitaxy AT sulkiocleffb propertiesofcdtethinfilmspreparedbyhotwallepitaxy |
| first_indexed |
2023-10-18T20:31:28Z |
| last_indexed |
2023-10-18T20:31:28Z |
| _version_ |
1796150426083524608 |