Model of heterotransistor with quantum dots
Heterostructure transistors with quantum dots (QD) are now very perspective devices because of their higher velocities of electrons in the channel. Simulation results for concentration and carrier velocity distributions depending on the QD size, concentration and location were presented in this p...
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| Дата: | 2010 |
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| Автори: | , |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2010
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| Назва видання: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/118231 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Model of heterotransistor with quantum dots/ V.I. Timofeyev, E.M. Faleyeva // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2010. — Т. 13, № 2. — С. 186-188. — Бібліогр.: 4 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
irk-123456789-118231 |
|---|---|
| record_format |
dspace |
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irk-123456789-1182312017-05-30T03:05:28Z Model of heterotransistor with quantum dots Timofeyev, V.I. Faleyeva, E.M. Heterostructure transistors with quantum dots (QD) are now very perspective devices because of their higher velocities of electrons in the channel. Simulation results for concentration and carrier velocity distributions depending on the QD size, concentration and location were presented in this paper. It is shown that presence of QD in the channel causes a significant increase of current. Also, QD location and concentration influence to the output characteristics of transistor was established. 2010 Article Model of heterotransistor with quantum dots/ V.I. Timofeyev, E.M. Faleyeva // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2010. — Т. 13, № 2. — С. 186-188. — Бібліогр.: 4 назв. — англ. 1560-8034 PACS 73.40.-c, 85.35.Be http://dspace.nbuv.gov.ua/handle/123456789/118231 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| language |
English |
| description |
Heterostructure transistors with quantum dots (QD) are now very perspective
devices because of their higher velocities of electrons in the channel. Simulation results
for concentration and carrier velocity distributions depending on the QD size,
concentration and location were presented in this paper. It is shown that presence of QD
in the channel causes a significant increase of current. Also, QD location and
concentration influence to the output characteristics of transistor was established. |
| format |
Article |
| author |
Timofeyev, V.I. Faleyeva, E.M. |
| spellingShingle |
Timofeyev, V.I. Faleyeva, E.M. Model of heterotransistor with quantum dots Semiconductor Physics Quantum Electronics & Optoelectronics |
| author_facet |
Timofeyev, V.I. Faleyeva, E.M. |
| author_sort |
Timofeyev, V.I. |
| title |
Model of heterotransistor with quantum dots |
| title_short |
Model of heterotransistor with quantum dots |
| title_full |
Model of heterotransistor with quantum dots |
| title_fullStr |
Model of heterotransistor with quantum dots |
| title_full_unstemmed |
Model of heterotransistor with quantum dots |
| title_sort |
model of heterotransistor with quantum dots |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| publishDate |
2010 |
| url |
http://dspace.nbuv.gov.ua/handle/123456789/118231 |
| citation_txt |
Model of heterotransistor with quantum dots/ V.I. Timofeyev, E.M. Faleyeva // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2010. — Т. 13, № 2. — С. 186-188. — Бібліогр.: 4 назв. — англ. |
| series |
Semiconductor Physics Quantum Electronics & Optoelectronics |
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AT timofeyevvi modelofheterotransistorwithquantumdots AT faleyevaem modelofheterotransistorwithquantumdots |
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2023-10-18T20:31:49Z |
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2023-10-18T20:31:49Z |
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