Mechanisms of carrier transport in CdTe polycrystalline films

Cadmium telluride (CdTe) polycrystalline films grown on glass ceramic substrates by a modified close-spaced vapor transport technique have been investigated. The as-grown films have columnar structure with the average grain sizes about 10 μm. The in-plain direct current conductivity as a function...

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Бібліографічні деталі
Дата:2010
Автори: Sukach, A.V., Tetyorkin, V.V., Krolevec, N.M.
Формат: Стаття
Мова:English
Опубліковано: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2010
Назва видання:Semiconductor Physics Quantum Electronics & Optoelectronics
Онлайн доступ:http://dspace.nbuv.gov.ua/handle/123456789/118236
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Назва журналу:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Цитувати:Mechanisms of carrier transport in CdTe polycrystalline films/ A.V. Sukach, V.V. Tetyorkin and N.M. Krolevec // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2010. — Т. 13, № 2. — С. 221-225. — Бібліогр.:19 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine
id irk-123456789-118236
record_format dspace
spelling irk-123456789-1182362017-05-30T03:05:46Z Mechanisms of carrier transport in CdTe polycrystalline films Sukach, A.V. Tetyorkin, V.V. Krolevec, N.M. Cadmium telluride (CdTe) polycrystalline films grown on glass ceramic substrates by a modified close-spaced vapor transport technique have been investigated. The as-grown films have columnar structure with the average grain sizes about 10 μm. The in-plain direct current conductivity as a function of temperature and electric field has been investigated. The percolation conductivity is shown to be dominant at low temperatures (T < 250 K). At room temperature, the dominant transport mechanism is an activated process such as thermionic emission. The carrier transport across barriers is influenced by traps in the surface barrier regions. The non-annealed films exhibited stable electrical parameters and high photosensitivity during five-year storage under laboratory conditions. 2010 Article Mechanisms of carrier transport in CdTe polycrystalline films/ A.V. Sukach, V.V. Tetyorkin and N.M. Krolevec // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2010. — Т. 13, № 2. — С. 221-225. — Бібліогр.:19 назв. — англ. 1560-8034 PACS 78.30.L http://dspace.nbuv.gov.ua/handle/123456789/118236 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
institution Digital Library of Periodicals of National Academy of Sciences of Ukraine
collection DSpace DC
language English
description Cadmium telluride (CdTe) polycrystalline films grown on glass ceramic substrates by a modified close-spaced vapor transport technique have been investigated. The as-grown films have columnar structure with the average grain sizes about 10 μm. The in-plain direct current conductivity as a function of temperature and electric field has been investigated. The percolation conductivity is shown to be dominant at low temperatures (T < 250 K). At room temperature, the dominant transport mechanism is an activated process such as thermionic emission. The carrier transport across barriers is influenced by traps in the surface barrier regions. The non-annealed films exhibited stable electrical parameters and high photosensitivity during five-year storage under laboratory conditions.
format Article
author Sukach, A.V.
Tetyorkin, V.V.
Krolevec, N.M.
spellingShingle Sukach, A.V.
Tetyorkin, V.V.
Krolevec, N.M.
Mechanisms of carrier transport in CdTe polycrystalline films
Semiconductor Physics Quantum Electronics & Optoelectronics
author_facet Sukach, A.V.
Tetyorkin, V.V.
Krolevec, N.M.
author_sort Sukach, A.V.
title Mechanisms of carrier transport in CdTe polycrystalline films
title_short Mechanisms of carrier transport in CdTe polycrystalline films
title_full Mechanisms of carrier transport in CdTe polycrystalline films
title_fullStr Mechanisms of carrier transport in CdTe polycrystalline films
title_full_unstemmed Mechanisms of carrier transport in CdTe polycrystalline films
title_sort mechanisms of carrier transport in cdte polycrystalline films
publisher Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
publishDate 2010
url http://dspace.nbuv.gov.ua/handle/123456789/118236
citation_txt Mechanisms of carrier transport in CdTe polycrystalline films/ A.V. Sukach, V.V. Tetyorkin and N.M. Krolevec // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2010. — Т. 13, № 2. — С. 221-225. — Бібліогр.:19 назв. — англ.
series Semiconductor Physics Quantum Electronics & Optoelectronics
work_keys_str_mv AT sukachav mechanismsofcarriertransportincdtepolycrystallinefilms
AT tetyorkinvv mechanismsofcarriertransportincdtepolycrystallinefilms
AT krolevecnm mechanismsofcarriertransportincdtepolycrystallinefilms
first_indexed 2023-10-18T20:31:50Z
last_indexed 2023-10-18T20:31:50Z
_version_ 1796150437450088448