Mechanisms of carrier transport in CdTe polycrystalline films
Cadmium telluride (CdTe) polycrystalline films grown on glass ceramic substrates by a modified close-spaced vapor transport technique have been investigated. The as-grown films have columnar structure with the average grain sizes about 10 μm. The in-plain direct current conductivity as a function...
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Дата: | 2010 |
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Автори: | , , |
Формат: | Стаття |
Мова: | English |
Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2010
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Назва видання: | Semiconductor Physics Quantum Electronics & Optoelectronics |
Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/118236 |
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Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
Цитувати: | Mechanisms of carrier transport in CdTe polycrystalline films/ A.V. Sukach, V.V. Tetyorkin and N.M. Krolevec // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2010. — Т. 13, № 2. — С. 221-225. — Бібліогр.:19 назв. — англ. |
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irk-123456789-1182362017-05-30T03:05:46Z Mechanisms of carrier transport in CdTe polycrystalline films Sukach, A.V. Tetyorkin, V.V. Krolevec, N.M. Cadmium telluride (CdTe) polycrystalline films grown on glass ceramic substrates by a modified close-spaced vapor transport technique have been investigated. The as-grown films have columnar structure with the average grain sizes about 10 μm. The in-plain direct current conductivity as a function of temperature and electric field has been investigated. The percolation conductivity is shown to be dominant at low temperatures (T < 250 K). At room temperature, the dominant transport mechanism is an activated process such as thermionic emission. The carrier transport across barriers is influenced by traps in the surface barrier regions. The non-annealed films exhibited stable electrical parameters and high photosensitivity during five-year storage under laboratory conditions. 2010 Article Mechanisms of carrier transport in CdTe polycrystalline films/ A.V. Sukach, V.V. Tetyorkin and N.M. Krolevec // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2010. — Т. 13, № 2. — С. 221-225. — Бібліогр.:19 назв. — англ. 1560-8034 PACS 78.30.L http://dspace.nbuv.gov.ua/handle/123456789/118236 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
collection |
DSpace DC |
language |
English |
description |
Cadmium telluride (CdTe) polycrystalline films grown on glass ceramic
substrates by a modified close-spaced vapor transport technique have been investigated.
The as-grown films have columnar structure with the average grain sizes about 10 μm.
The in-plain direct current conductivity as a function of temperature and electric field has
been investigated. The percolation conductivity is shown to be dominant at low
temperatures (T < 250 K). At room temperature, the dominant transport mechanism is an
activated process such as thermionic emission. The carrier transport across barriers is
influenced by traps in the surface barrier regions. The non-annealed films exhibited
stable electrical parameters and high photosensitivity during five-year storage under
laboratory conditions. |
format |
Article |
author |
Sukach, A.V. Tetyorkin, V.V. Krolevec, N.M. |
spellingShingle |
Sukach, A.V. Tetyorkin, V.V. Krolevec, N.M. Mechanisms of carrier transport in CdTe polycrystalline films Semiconductor Physics Quantum Electronics & Optoelectronics |
author_facet |
Sukach, A.V. Tetyorkin, V.V. Krolevec, N.M. |
author_sort |
Sukach, A.V. |
title |
Mechanisms of carrier transport in CdTe polycrystalline films |
title_short |
Mechanisms of carrier transport in CdTe polycrystalline films |
title_full |
Mechanisms of carrier transport in CdTe polycrystalline films |
title_fullStr |
Mechanisms of carrier transport in CdTe polycrystalline films |
title_full_unstemmed |
Mechanisms of carrier transport in CdTe polycrystalline films |
title_sort |
mechanisms of carrier transport in cdte polycrystalline films |
publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
publishDate |
2010 |
url |
http://dspace.nbuv.gov.ua/handle/123456789/118236 |
citation_txt |
Mechanisms of carrier transport in CdTe polycrystalline films/ A.V. Sukach, V.V. Tetyorkin and N.M. Krolevec // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2010. — Т. 13, № 2. — С. 221-225. — Бібліогр.:19 назв. — англ. |
series |
Semiconductor Physics Quantum Electronics & Optoelectronics |
work_keys_str_mv |
AT sukachav mechanismsofcarriertransportincdtepolycrystallinefilms AT tetyorkinvv mechanismsofcarriertransportincdtepolycrystallinefilms AT krolevecnm mechanismsofcarriertransportincdtepolycrystallinefilms |
first_indexed |
2023-10-18T20:31:50Z |
last_indexed |
2023-10-18T20:31:50Z |
_version_ |
1796150437450088448 |