Investigation of InS-InSe heterojunctions prepared using sulphurization of p-InSe
n-InS/p-InSe heterojunctions were obtained by annealing p-InSe samples in sulphur vapours. By means of the atomic force microscopy method, topology of InS film surface was investigated. Current-voltage characteristics of the heterojunction were measured, and principal mechanisms of charge transfer w...
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| Дата: | 2012 |
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| Автори: | , , |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2012
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| Назва видання: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/118249 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Investigation of InS-InSe heterojunctions prepared using sulphurization of p-InSe / Z.D. Kovalyuk, V.Y. Duplavyy, O.M. Sydor // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2012. — Т. 15, № 1. — С. 38-40. — Бібліогр.: 5 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
irk-123456789-118249 |
|---|---|
| record_format |
dspace |
| spelling |
irk-123456789-1182492017-05-30T03:03:22Z Investigation of InS-InSe heterojunctions prepared using sulphurization of p-InSe Kovalyuk, Z.D. Duplavyy, V.Y. Sydor, O.M. n-InS/p-InSe heterojunctions were obtained by annealing p-InSe samples in sulphur vapours. By means of the atomic force microscopy method, topology of InS film surface was investigated. Current-voltage characteristics of the heterojunction were measured, and principal mechanisms of charge transfer were established. The spectrum of relative quantum efficiency of the heterojunction was measured. 2012 Article Investigation of InS-InSe heterojunctions prepared using sulphurization of p-InSe / Z.D. Kovalyuk, V.Y. Duplavyy, O.M. Sydor // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2012. — Т. 15, № 1. — С. 38-40. — Бібліогр.: 5 назв. — англ. 1560-8034 PACS 73.40.Lq http://dspace.nbuv.gov.ua/handle/123456789/118249 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| language |
English |
| description |
n-InS/p-InSe heterojunctions were obtained by annealing p-InSe samples in sulphur vapours. By means of the atomic force microscopy method, topology of InS film surface was investigated. Current-voltage characteristics of the heterojunction were measured, and principal mechanisms of charge transfer were established. The spectrum of relative quantum efficiency of the heterojunction was measured. |
| format |
Article |
| author |
Kovalyuk, Z.D. Duplavyy, V.Y. Sydor, O.M. |
| spellingShingle |
Kovalyuk, Z.D. Duplavyy, V.Y. Sydor, O.M. Investigation of InS-InSe heterojunctions prepared using sulphurization of p-InSe Semiconductor Physics Quantum Electronics & Optoelectronics |
| author_facet |
Kovalyuk, Z.D. Duplavyy, V.Y. Sydor, O.M. |
| author_sort |
Kovalyuk, Z.D. |
| title |
Investigation of InS-InSe heterojunctions prepared using sulphurization of p-InSe |
| title_short |
Investigation of InS-InSe heterojunctions prepared using sulphurization of p-InSe |
| title_full |
Investigation of InS-InSe heterojunctions prepared using sulphurization of p-InSe |
| title_fullStr |
Investigation of InS-InSe heterojunctions prepared using sulphurization of p-InSe |
| title_full_unstemmed |
Investigation of InS-InSe heterojunctions prepared using sulphurization of p-InSe |
| title_sort |
investigation of ins-inse heterojunctions prepared using sulphurization of p-inse |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| publishDate |
2012 |
| url |
http://dspace.nbuv.gov.ua/handle/123456789/118249 |
| citation_txt |
Investigation of InS-InSe heterojunctions
prepared using sulphurization of p-InSe / Z.D. Kovalyuk, V.Y. Duplavyy, O.M. Sydor // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2012. — Т. 15, № 1. — С. 38-40. — Бібліогр.: 5 назв. — англ. |
| series |
Semiconductor Physics Quantum Electronics & Optoelectronics |
| work_keys_str_mv |
AT kovalyukzd investigationofinsinseheterojunctionspreparedusingsulphurizationofpinse AT duplavyyvy investigationofinsinseheterojunctionspreparedusingsulphurizationofpinse AT sydorom investigationofinsinseheterojunctionspreparedusingsulphurizationofpinse |
| first_indexed |
2023-10-18T20:31:40Z |
| last_indexed |
2023-10-18T20:31:40Z |
| _version_ |
1796150431713329152 |