Determination of interface state density in high-k dielectric-silicon system from conductance-frequency measurements
Capacitance-voltage (C-V ) and conductance-frequency ( G-ω ) techniques were modified in order to take into account the leakage current flowing through the metal-oxide-semiconductor (MOS) structure. The results of measurements of interface state densities in several high −k dielectric – silicon syst...
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| Дата: | 2012 |
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| Автор: | |
| Формат: | Стаття |
| Мова: | English |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2012
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| Назва видання: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/118255 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Determination of interface state density in high-k dielectric-silicon system from conductance-frequency measurements / Yu.V. Gomeniuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2012. — Т. 15, № 1. — С. 1-7. — Бібліогр.: 22 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
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irk-123456789-1182552017-05-30T03:03:23Z Determination of interface state density in high-k dielectric-silicon system from conductance-frequency measurements Gomeniuk, Yu.V. Capacitance-voltage (C-V ) and conductance-frequency ( G-ω ) techniques were modified in order to take into account the leakage current flowing through the metal-oxide-semiconductor (MOS) structure. The results of measurements of interface state densities in several high −k dielectric – silicon systems, including transition metal (Hf) and rare-earth metal (Gd, Nd) oxides, ternary compounds (LaLuO₃) and silicate (LaSiOx), are presented. It was shown that the interface state densities can be as low as ( 1.5...2) × 10¹¹ eV⁻¹cm⁻² for Al-HfO₃-Si, Pt-Gd₂O₃-Si and Pt-LaLuO₃-Si systems if the dielectric layer is deposited onto (100) silicon wafer surface. The electrically active states are attributed presumably to silicon dangling bonds at the interface between dielectric and semiconductor 2012 Article Determination of interface state density in high-k dielectric-silicon system from conductance-frequency measurements / Yu.V. Gomeniuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2012. — Т. 15, № 1. — С. 1-7. — Бібліогр.: 22 назв. — англ. 1560-8034 PACS 73.20.-r http://dspace.nbuv.gov.ua/handle/123456789/118255 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| language |
English |
| description |
Capacitance-voltage (C-V ) and conductance-frequency ( G-ω ) techniques were modified in order to take into account the leakage current flowing through the metal-oxide-semiconductor (MOS) structure. The results of measurements of interface state densities in several high −k dielectric – silicon systems, including transition metal (Hf) and rare-earth metal (Gd, Nd) oxides, ternary compounds (LaLuO₃) and silicate (LaSiOx), are presented. It was shown that the interface state densities can be as low as ( 1.5...2) × 10¹¹ eV⁻¹cm⁻² for Al-HfO₃-Si, Pt-Gd₂O₃-Si and Pt-LaLuO₃-Si systems if the dielectric layer is deposited onto (100) silicon wafer surface. The electrically active states are attributed presumably to silicon dangling bonds at the interface between dielectric and semiconductor |
| format |
Article |
| author |
Gomeniuk, Yu.V. |
| spellingShingle |
Gomeniuk, Yu.V. Determination of interface state density in high-k dielectric-silicon system from conductance-frequency measurements Semiconductor Physics Quantum Electronics & Optoelectronics |
| author_facet |
Gomeniuk, Yu.V. |
| author_sort |
Gomeniuk, Yu.V. |
| title |
Determination of interface state density in high-k dielectric-silicon system from conductance-frequency measurements |
| title_short |
Determination of interface state density in high-k dielectric-silicon system from conductance-frequency measurements |
| title_full |
Determination of interface state density in high-k dielectric-silicon system from conductance-frequency measurements |
| title_fullStr |
Determination of interface state density in high-k dielectric-silicon system from conductance-frequency measurements |
| title_full_unstemmed |
Determination of interface state density in high-k dielectric-silicon system from conductance-frequency measurements |
| title_sort |
determination of interface state density in high-k dielectric-silicon system from conductance-frequency measurements |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| publishDate |
2012 |
| url |
http://dspace.nbuv.gov.ua/handle/123456789/118255 |
| citation_txt |
Determination of interface state density in high-k dielectric-silicon system from conductance-frequency measurements / Yu.V. Gomeniuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2012. — Т. 15, № 1. — С. 1-7. — Бібліогр.: 22 назв. — англ. |
| series |
Semiconductor Physics Quantum Electronics & Optoelectronics |
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AT gomeniukyuv determinationofinterfacestatedensityinhighkdielectricsiliconsystemfromconductancefrequencymeasurements |
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2023-10-18T20:31:41Z |
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2023-10-18T20:31:41Z |
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1796150432031047680 |