Narrow-gap piezoelectric heterostructure as IR detector

• Видавець: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
• Дата: 2012
• Автори: Sizov, F.F., Smirnov, A.B., Savkina, R.K., Deriglazov, V.A., Yakushev, M.V.
• Формат: Стаття
• Мова: English
• Опубліковано: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2012
• Назва видання: Semiconductor Physics Quantum Electronics & Optoelectronics
• Онлайн доступ: http://dspace.nbuv.gov.ua/handle/123456789/118277
• Цитувати: Narrow-gap piezoelectric heterostructure as IR detector / F.F. Sizov, A.B. Smirnov, R.K. Savkina, V.A. Deriglazov, M.V. Yakushev // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2012. — Т. 15, № 1. — С. 65-71. — Бібліогр.: 21 назв. — англ.

Narrow-gap mercury cadmium telluride thin films grown by MBE and LPE methods onto various substrates (HgCdTe/Si, HgCdTe/GaAs, HgCdTe/CdZnTe) were investigated as a piezoelectric heterostructure for IR detection. The photoresponse, infrared transmittance spectra, parameters of the charge carrier transport, and mechanical properties were studied. Mechanical stresses at the layer-substrate interface were analyzed. HgCdTe-based infrared device is considered, operating in the middle (3–5 μm) infrared spectral range without cryogenic cooling to achieve performance level D* = 2.6 ⋅ 10⁹ ⋅ W⁻¹ cm ⋅Hz¹/² The possibility to detect infrared radiation is thought to be based on the possibility of the spatial separation of the non-equilibrium carriers in the strained semiconductor heterostructure with piezoelectric properties.