Narrow-gap piezoelectric heterostructure as IR detector
Narrow-gap mercury cadmium telluride thin films grown by MBE and LPE methods onto various substrates (HgCdTe/Si, HgCdTe/GaAs, HgCdTe/CdZnTe) were investigated as a piezoelectric heterostructure for IR detection. The photoresponse, infrared transmittance spectra, parameters of the charge carrie...
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| Видавець: | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
|---|---|
| Дата: | 2012 |
| Автори: | , , , , |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2012
|
| Назва видання: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/118277 |
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| Цитувати: | Narrow-gap piezoelectric heterostructure as IR detector / F.F. Sizov, A.B. Smirnov, R.K. Savkina, V.A. Deriglazov, M.V. Yakushev // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2012. — Т. 15, № 1. — С. 65-71. — Бібліогр.: 21 назв. — англ. |
Репозиторії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
irk-123456789-118277 |
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irk-123456789-1182772017-05-30T03:04:32Z Narrow-gap piezoelectric heterostructure as IR detector Sizov, F.F. Smirnov, A.B. Savkina, R.K. Deriglazov, V.A. Yakushev, M.V. Narrow-gap mercury cadmium telluride thin films grown by MBE and LPE methods onto various substrates (HgCdTe/Si, HgCdTe/GaAs, HgCdTe/CdZnTe) were investigated as a piezoelectric heterostructure for IR detection. The photoresponse, infrared transmittance spectra, parameters of the charge carrier transport, and mechanical properties were studied. Mechanical stresses at the layer-substrate interface were analyzed. HgCdTe-based infrared device is considered, operating in the middle (3–5 μm) infrared spectral range without cryogenic cooling to achieve performance level D* = 2.6 ⋅ 10⁹ ⋅ W⁻¹ cm ⋅Hz¹/² The possibility to detect infrared radiation is thought to be based on the possibility of the spatial separation of the non-equilibrium carriers in the strained semiconductor heterostructure with piezoelectric properties. 2012 Article Narrow-gap piezoelectric heterostructure as IR detector / F.F. Sizov, A.B. Smirnov, R.K. Savkina, V.A. Deriglazov, M.V. Yakushev // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2012. — Т. 15, № 1. — С. 65-71. — Бібліогр.: 21 назв. — англ. 1560-8034 PACS 72.40.+w, 77.65.Ly, 81.05.Dz http://dspace.nbuv.gov.ua/handle/123456789/118277 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| language |
English |
| description |
Narrow-gap mercury cadmium telluride thin films grown by MBE and LPE
methods onto various substrates (HgCdTe/Si, HgCdTe/GaAs, HgCdTe/CdZnTe) were
investigated as a piezoelectric heterostructure for IR detection. The photoresponse,
infrared transmittance spectra, parameters of the charge carrier transport, and mechanical
properties were studied. Mechanical stresses at the layer-substrate interface were
analyzed. HgCdTe-based infrared device is considered, operating in the middle (3–5 μm)
infrared spectral range without cryogenic cooling to achieve performance level D*
= 2.6 ⋅ 10⁹ ⋅ W⁻¹ cm ⋅Hz¹/² The possibility to detect infrared radiation is thought to be
based on the possibility of the spatial separation of the non-equilibrium carriers in the
strained semiconductor heterostructure with piezoelectric properties. |
| format |
Article |
| author |
Sizov, F.F. Smirnov, A.B. Savkina, R.K. Deriglazov, V.A. Yakushev, M.V. |
| spellingShingle |
Sizov, F.F. Smirnov, A.B. Savkina, R.K. Deriglazov, V.A. Yakushev, M.V. Narrow-gap piezoelectric heterostructure as IR detector Semiconductor Physics Quantum Electronics & Optoelectronics |
| author_facet |
Sizov, F.F. Smirnov, A.B. Savkina, R.K. Deriglazov, V.A. Yakushev, M.V. |
| author_sort |
Sizov, F.F. |
| title |
Narrow-gap piezoelectric heterostructure as IR detector |
| title_short |
Narrow-gap piezoelectric heterostructure as IR detector |
| title_full |
Narrow-gap piezoelectric heterostructure as IR detector |
| title_fullStr |
Narrow-gap piezoelectric heterostructure as IR detector |
| title_full_unstemmed |
Narrow-gap piezoelectric heterostructure as IR detector |
| title_sort |
narrow-gap piezoelectric heterostructure as ir detector |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| publishDate |
2012 |
| url |
http://dspace.nbuv.gov.ua/handle/123456789/118277 |
| citation_txt |
Narrow-gap piezoelectric heterostructure as IR detector / F.F. Sizov, A.B. Smirnov, R.K. Savkina, V.A. Deriglazov, M.V. Yakushev // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2012. — Т. 15, № 1. — С. 65-71. — Бібліогр.: 21 назв. — англ. |
| series |
Semiconductor Physics Quantum Electronics & Optoelectronics |
| work_keys_str_mv |
AT sizovff narrowgappiezoelectricheterostructureasirdetector AT smirnovab narrowgappiezoelectricheterostructureasirdetector AT savkinark narrowgappiezoelectricheterostructureasirdetector AT deriglazovva narrowgappiezoelectricheterostructureasirdetector AT yakushevmv narrowgappiezoelectricheterostructureasirdetector |
| first_indexed |
2023-10-18T20:31:42Z |
| last_indexed |
2023-10-18T20:31:42Z |
| _version_ |
1796150433838792704 |