Current transport mechanisms in metal – high-k dielectric – silicon structures
The mechanism of current transport in several high k -dielectric, including rare earth metal oxides (Gd₂O₃, Nd₂O₃), ternary compounds (LaLuO₃) and rare earth metal silicate (LaSiOx) thin films on silicon was studied using current-voltage ( I - V ) and conductance-frequency measurements at temper...
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| Дата: | 2012 |
|---|---|
| Автор: | |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2012
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| Назва видання: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/118283 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Current transport mechanisms in metal – high-k dielectric – silicon structures / Y.V. Gomeniuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2012. — Т. 15, № 2. — С. 139-146. — Бібліогр.: 35 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
irk-123456789-118283 |
|---|---|
| record_format |
dspace |
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irk-123456789-1182832017-05-30T03:04:05Z Current transport mechanisms in metal – high-k dielectric – silicon structures Gomeniuk, Y.V. The mechanism of current transport in several high k -dielectric, including rare earth metal oxides (Gd₂O₃, Nd₂O₃), ternary compounds (LaLuO₃) and rare earth metal silicate (LaSiOx) thin films on silicon was studied using current-voltage ( I - V ) and conductance-frequency measurements at temperatures 100-300 K. It was shown that the current through the dielectric layer is controlled either by Pool-Frenkel mechanism of trap-assisted tunneling or by Mott’s variable range hopping conductance through the localized states near the Fermi level. From the results of measurements, the dynamic dielectric constant k of the material, energy positions and bulk concentrations of traps inside the dielectric layers were determined. 2012 Article Current transport mechanisms in metal – high-k dielectric – silicon structures / Y.V. Gomeniuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2012. — Т. 15, № 2. — С. 139-146. — Бібліогр.: 35 назв. — англ. 1560-8034 PACS 73.20.-r http://dspace.nbuv.gov.ua/handle/123456789/118283 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| language |
English |
| description |
The mechanism of current transport in several high k -dielectric, including
rare earth metal oxides (Gd₂O₃, Nd₂O₃), ternary compounds (LaLuO₃) and rare earth
metal silicate (LaSiOx) thin films on silicon was studied using current-voltage ( I - V )
and conductance-frequency measurements at temperatures 100-300 K. It was
shown that the current through the dielectric layer is controlled either by Pool-Frenkel
mechanism of trap-assisted tunneling or by Mott’s variable range hopping conductance
through the localized states near the Fermi level. From the results of measurements, the
dynamic dielectric constant k of the material, energy positions and bulk concentrations of
traps inside the dielectric layers were determined. |
| format |
Article |
| author |
Gomeniuk, Y.V. |
| spellingShingle |
Gomeniuk, Y.V. Current transport mechanisms in metal – high-k dielectric – silicon structures Semiconductor Physics Quantum Electronics & Optoelectronics |
| author_facet |
Gomeniuk, Y.V. |
| author_sort |
Gomeniuk, Y.V. |
| title |
Current transport mechanisms in metal – high-k dielectric – silicon structures |
| title_short |
Current transport mechanisms in metal – high-k dielectric – silicon structures |
| title_full |
Current transport mechanisms in metal – high-k dielectric – silicon structures |
| title_fullStr |
Current transport mechanisms in metal – high-k dielectric – silicon structures |
| title_full_unstemmed |
Current transport mechanisms in metal – high-k dielectric – silicon structures |
| title_sort |
current transport mechanisms in metal – high-k dielectric – silicon structures |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| publishDate |
2012 |
| url |
http://dspace.nbuv.gov.ua/handle/123456789/118283 |
| citation_txt |
Current transport mechanisms in metal – high-k
dielectric – silicon structures / Y.V. Gomeniuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2012. — Т. 15, № 2. — С. 139-146. — Бібліогр.: 35 назв. — англ. |
| series |
Semiconductor Physics Quantum Electronics & Optoelectronics |
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AT gomeniukyv currenttransportmechanismsinmetalhighkdielectricsiliconstructures |
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2023-10-18T20:31:43Z |
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2023-10-18T20:31:43Z |
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1796150438934872064 |