Thermal state modeling in thermosensitive elements of microelectronic devices with reach-through foreign inclusions
The nonlinear boundary axially symmetric problem of heat conduction for the thermosensitive piecewise homogeneous layer with reach-through cylindrical inclusion that generates heat has been considered. Using the introduced function, the partial linearization of the original problem has been carri...
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| Дата: | 2012 |
|---|---|
| Автор: | |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2012
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| Назва видання: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/118314 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Thermal state modeling in thermosensitive elements of microelectronic devices with reach-through foreign inclusions / V.I Gavrysh.// Semiconductor Physics Quantum Electronics & Optoelectronics. — 2012. — Т. 15, № 3. — С. 247-251. — Бібліогр.: 13 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
irk-123456789-118314 |
|---|---|
| record_format |
dspace |
| spelling |
irk-123456789-1183142017-05-30T03:05:45Z Thermal state modeling in thermosensitive elements of microelectronic devices with reach-through foreign inclusions Gavrysh, V.I. The nonlinear boundary axially symmetric problem of heat conduction for the thermosensitive piecewise homogeneous layer with reach-through cylindrical inclusion that generates heat has been considered. Using the introduced function, the partial linearization of the original problem has been carried out. With the proposed piecewiselinear approximation of temperature at the boundary surface of the foreign inclusion and on the contact surface of the homogeneous elements of the layer, the problem has been completely linearized. The analytical solution of this problem of finding the introduced function using Hankel integral transform has been formed. The formulae for calculating the desired temperature have been derived. 2012 Article Thermal state modeling in thermosensitive elements of microelectronic devices with reach-through foreign inclusions / V.I Gavrysh.// Semiconductor Physics Quantum Electronics & Optoelectronics. — 2012. — Т. 15, № 3. — С. 247-251. — Бібліогр.: 13 назв. — англ. 1560-8034 PACS 74.25.fc http://dspace.nbuv.gov.ua/handle/123456789/118314 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| language |
English |
| description |
The nonlinear boundary axially symmetric problem of heat conduction for the
thermosensitive piecewise homogeneous layer with reach-through cylindrical inclusion
that generates heat has been considered. Using the introduced function, the partial
linearization of the original problem has been carried out. With the proposed piecewiselinear
approximation of temperature at the boundary surface of the foreign inclusion and
on the contact surface of the homogeneous elements of the layer, the problem has been
completely linearized. The analytical solution of this problem of finding the introduced
function using Hankel integral transform has been formed. The formulae for calculating
the desired temperature have been derived. |
| format |
Article |
| author |
Gavrysh, V.I. |
| spellingShingle |
Gavrysh, V.I. Thermal state modeling in thermosensitive elements of microelectronic devices with reach-through foreign inclusions Semiconductor Physics Quantum Electronics & Optoelectronics |
| author_facet |
Gavrysh, V.I. |
| author_sort |
Gavrysh, V.I. |
| title |
Thermal state modeling in thermosensitive elements of microelectronic devices with reach-through foreign inclusions |
| title_short |
Thermal state modeling in thermosensitive elements of microelectronic devices with reach-through foreign inclusions |
| title_full |
Thermal state modeling in thermosensitive elements of microelectronic devices with reach-through foreign inclusions |
| title_fullStr |
Thermal state modeling in thermosensitive elements of microelectronic devices with reach-through foreign inclusions |
| title_full_unstemmed |
Thermal state modeling in thermosensitive elements of microelectronic devices with reach-through foreign inclusions |
| title_sort |
thermal state modeling in thermosensitive elements of microelectronic devices with reach-through foreign inclusions |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| publishDate |
2012 |
| url |
http://dspace.nbuv.gov.ua/handle/123456789/118314 |
| citation_txt |
Thermal state modeling in thermosensitive elements of
microelectronic devices with reach-through foreign inclusions / V.I Gavrysh.// Semiconductor Physics Quantum Electronics & Optoelectronics. — 2012. — Т. 15, № 3. — С. 247-251. — Бібліогр.: 13 назв. — англ. |
| series |
Semiconductor Physics Quantum Electronics & Optoelectronics |
| work_keys_str_mv |
AT gavryshvi thermalstatemodelinginthermosensitiveelementsofmicroelectronicdeviceswithreachthroughforeigninclusions |
| first_indexed |
2023-10-18T20:31:53Z |
| last_indexed |
2023-10-18T20:31:53Z |
| _version_ |
1796150440727937024 |