Photoelectrical properties of nanoporous silicon
The optimal composition of etchant solution and etching time for chemical treatment to obtain nanoporous Si have been determined. Influence of nanocrystal dimensions on the electrophysical and photoelectrical properties of heterojunctions has been studied. The current-voltage characteristics of n...
Збережено в:
| Дата: | 2012 |
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| Автори: | , , |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2012
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| Назва видання: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/118327 |
| Теги: |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Photoelectrical properties of nanoporous silicon / A.I. Luchenko, K.V. Svezhentsova, M.M. Melnichenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2012. — Т. 15, № 3. — С. 298-301. — Бібліогр.: 9 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| Резюме: | The optimal composition of etchant solution and etching time for chemical
treatment to obtain nanoporous Si have been determined. Influence of nanocrystal
dimensions on the electrophysical and photoelectrical properties of heterojunctions has
been studied. The current-voltage characteristics of nanoporous Si with various
nanocrystal dimensions were measured. It was ascertained that lux-ampere characteristics
have a linear range and sublinear one, which almost reaches the asymptote at the
intensity of light above 10,000 lux. Nanoporous Si on the substrate of Si single-crystal
has increased sensitivity to the humidity in comparison with that of metallurgical Si. The
obtained results can be applied for development of highly sensitive sensors of humidity |
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