2025-02-23T05:59:34-05:00 DEBUG: VuFindSearch\Backend\Solr\Connector: Query fl=%2A&wt=json&json.nl=arrarr&q=id%3A%22irk-123456789-118333%22&qt=morelikethis&rows=5
2025-02-23T05:59:34-05:00 DEBUG: VuFindSearch\Backend\Solr\Connector: => GET http://localhost:8983/solr/biblio/select?fl=%2A&wt=json&json.nl=arrarr&q=id%3A%22irk-123456789-118333%22&qt=morelikethis&rows=5
2025-02-23T05:59:34-05:00 DEBUG: VuFindSearch\Backend\Solr\Connector: <= 200 OK
2025-02-23T05:59:34-05:00 DEBUG: Deserialized SOLR response
HgCdTe quantum wells grown by molecular beam epitaxy

HgCdTe quantum wells grown by molecular beam epitaxy

CdxHg₁₋xTe-based (x = 0 – 0.25) quantum wells (QWs) of 8 – 22 nm in thickness were grown on (013) CdTe/ZnTe/GaAs substrates by molecular beam epitaxy. The composition and thickness (d) of wide-gap layers (spacers) were x ∼ 0.7 mol.frac. and d ∼ 35 nm, respectively, at both sides of the quantum we...

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Bibliographic Details
Main Authors: Dvoretsky, S.A, Ikusov, D.G., Kvon, Z.D., Mikhailov, N.N., Remesnik, V.G., Smirnov, R.N., Sidorov, Yu.G., Shvets, V.A.
Format: Article
Language:English
Published: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2007
Series:Semiconductor Physics Quantum Electronics & Optoelectronics
Online Access:http://dspace.nbuv.gov.ua/handle/123456789/118333
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2025-02-23T05:59:34-05:00 DEBUG: VuFindSearch\Backend\Solr\Connector: Query fl=%2A&rows=40&rows=5&wt=json&json.nl=arrarr&q=id%3A%22irk-123456789-118333%22&qt=morelikethis
2025-02-23T05:59:34-05:00 DEBUG: VuFindSearch\Backend\Solr\Connector: => GET http://localhost:8983/solr/biblio/select?fl=%2A&rows=40&rows=5&wt=json&json.nl=arrarr&q=id%3A%22irk-123456789-118333%22&qt=morelikethis
2025-02-23T05:59:34-05:00 DEBUG: VuFindSearch\Backend\Solr\Connector: <= 200 OK
2025-02-23T05:59:34-05:00 DEBUG: Deserialized SOLR response

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