Raman spectroscopy and X-ray diffraction studies of (GeS₂)₁₀₀₋x(SbSI)x glasses and composites on their basis
The structure and structural changes under the isothermal annealing of (GeS₂)₁₀₀₋x(SbSI)x (0 ≤ x ≤ 90) glasses were investigated by Raman spectroscopy and X-ray diffraction methods. The nanoheterogeneous nature of these glasses structure has been revealed. The matrix of (GeS₂)₁₀₀₋x(SbSI)x glas...
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Дата: | 2014 |
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Автори: | , , , , , , |
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Мова: | English |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2014
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Назва видання: | Semiconductor Physics Quantum Electronics & Optoelectronics |
Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/118348 |
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Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
Цитувати: | Raman spectroscopy and X-ray diffraction studies of (GeS₂)₁₀₀₋x(SbSI)x glasses and composites on their basis / V.M. Rubish, V.O. Stefanovich, V.M. Maryan, O.A. Mykaylo, P.P. Shtets, D.I. Kaynts, I.M. Yurkin // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2014. — Т. 17, № 1. — С. 61-66. — Бібліогр.: 38 назв. — англ. |
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irk-123456789-1183482017-05-31T03:04:55Z Raman spectroscopy and X-ray diffraction studies of (GeS₂)₁₀₀₋x(SbSI)x glasses and composites on their basis Rubish, V.M. Stefanovich, V.O. Maryan, V.M. Mykaylo, O.A. Shtets, P.P. Kaynts, D.I. Yurkin, I.M. The structure and structural changes under the isothermal annealing of (GeS₂)₁₀₀₋x(SbSI)x (0 ≤ x ≤ 90) glasses were investigated by Raman spectroscopy and X-ray diffraction methods. The nanoheterogeneous nature of these glasses structure has been revealed. The matrix of (GeS₂)₁₀₀₋x(SbSI)x glasses is basically built just of binary GeS4, SbS3 and SbI3 structural groups and contains a small amount of molecular fragments with homopolar Ge - Ge and S - S bonds. The phase structure arising in the glass matrix at crystallization corresponds to the structure of crystalline SbSI. 2014 Article Raman spectroscopy and X-ray diffraction studies of (GeS₂)₁₀₀₋x(SbSI)x glasses and composites on their basis / V.M. Rubish, V.O. Stefanovich, V.M. Maryan, O.A. Mykaylo, P.P. Shtets, D.I. Kaynts, I.M. Yurkin // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2014. — Т. 17, № 1. — С. 61-66. — Бібліогр.: 38 назв. — англ. 1560-8034 PACS 61.43.Fs, 61.46.Bc, 77.84.Bw, 78.30.Ly http://dspace.nbuv.gov.ua/handle/123456789/118348 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
collection |
DSpace DC |
language |
English |
description |
The structure and structural changes under the isothermal annealing of
(GeS₂)₁₀₀₋x(SbSI)x (0 ≤ x ≤ 90) glasses were investigated by Raman spectroscopy and
X-ray diffraction methods. The nanoheterogeneous nature of these glasses structure has
been revealed. The matrix of (GeS₂)₁₀₀₋x(SbSI)x glasses is basically built just of binary
GeS4, SbS3 and SbI3 structural groups and contains a small amount of molecular
fragments with homopolar Ge - Ge and S - S bonds. The phase structure arising in the
glass matrix at crystallization corresponds to the structure of crystalline SbSI. |
format |
Article |
author |
Rubish, V.M. Stefanovich, V.O. Maryan, V.M. Mykaylo, O.A. Shtets, P.P. Kaynts, D.I. Yurkin, I.M. |
spellingShingle |
Rubish, V.M. Stefanovich, V.O. Maryan, V.M. Mykaylo, O.A. Shtets, P.P. Kaynts, D.I. Yurkin, I.M. Raman spectroscopy and X-ray diffraction studies of (GeS₂)₁₀₀₋x(SbSI)x glasses and composites on their basis Semiconductor Physics Quantum Electronics & Optoelectronics |
author_facet |
Rubish, V.M. Stefanovich, V.O. Maryan, V.M. Mykaylo, O.A. Shtets, P.P. Kaynts, D.I. Yurkin, I.M. |
author_sort |
Rubish, V.M. |
title |
Raman spectroscopy and X-ray diffraction studies of (GeS₂)₁₀₀₋x(SbSI)x glasses and composites on their basis |
title_short |
Raman spectroscopy and X-ray diffraction studies of (GeS₂)₁₀₀₋x(SbSI)x glasses and composites on their basis |
title_full |
Raman spectroscopy and X-ray diffraction studies of (GeS₂)₁₀₀₋x(SbSI)x glasses and composites on their basis |
title_fullStr |
Raman spectroscopy and X-ray diffraction studies of (GeS₂)₁₀₀₋x(SbSI)x glasses and composites on their basis |
title_full_unstemmed |
Raman spectroscopy and X-ray diffraction studies of (GeS₂)₁₀₀₋x(SbSI)x glasses and composites on their basis |
title_sort |
raman spectroscopy and x-ray diffraction studies of (ges₂)₁₀₀₋x(sbsi)x glasses and composites on their basis |
publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
publishDate |
2014 |
url |
http://dspace.nbuv.gov.ua/handle/123456789/118348 |
citation_txt |
Raman spectroscopy and X-ray diffraction studies of (GeS₂)₁₀₀₋x(SbSI)x glasses and composites on their basis / V.M. Rubish, V.O. Stefanovich, V.M. Maryan, O.A. Mykaylo, P.P. Shtets, D.I. Kaynts, I.M. Yurkin // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2014. — Т. 17, № 1. — С. 61-66. — Бібліогр.: 38 назв. — англ. |
series |
Semiconductor Physics Quantum Electronics & Optoelectronics |
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first_indexed |
2023-10-18T20:31:46Z |
last_indexed |
2023-10-18T20:31:46Z |
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