Raman spectroscopy and X-ray diffraction studies of (GeS₂)₁₀₀₋x(SbSI)x glasses and composites on their basis

The structure and structural changes under the isothermal annealing of (GeS₂)₁₀₀₋x(SbSI)x (0 ≤ x ≤ 90) glasses were investigated by Raman spectroscopy and X-ray diffraction methods. The nanoheterogeneous nature of these glasses structure has been revealed. The matrix of (GeS₂)₁₀₀₋x(SbSI)x glas...

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Дата:2014
Автори: Rubish, V.M., Stefanovich, V.O., Maryan, V.M., Mykaylo, O.A., Shtets, P.P., Kaynts, D.I., Yurkin, I.M.
Формат: Стаття
Мова:English
Опубліковано: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2014
Назва видання:Semiconductor Physics Quantum Electronics & Optoelectronics
Онлайн доступ:http://dspace.nbuv.gov.ua/handle/123456789/118348
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Назва журналу:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Цитувати:Raman spectroscopy and X-ray diffraction studies of (GeS₂)₁₀₀₋x(SbSI)x glasses and composites on their basis / V.M. Rubish, V.O. Stefanovich, V.M. Maryan, O.A. Mykaylo, P.P. Shtets, D.I. Kaynts, I.M. Yurkin // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2014. — Т. 17, № 1. — С. 61-66. — Бібліогр.: 38 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine
id irk-123456789-118348
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spelling irk-123456789-1183482017-05-31T03:04:55Z Raman spectroscopy and X-ray diffraction studies of (GeS₂)₁₀₀₋x(SbSI)x glasses and composites on their basis Rubish, V.M. Stefanovich, V.O. Maryan, V.M. Mykaylo, O.A. Shtets, P.P. Kaynts, D.I. Yurkin, I.M. The structure and structural changes under the isothermal annealing of (GeS₂)₁₀₀₋x(SbSI)x (0 ≤ x ≤ 90) glasses were investigated by Raman spectroscopy and X-ray diffraction methods. The nanoheterogeneous nature of these glasses structure has been revealed. The matrix of (GeS₂)₁₀₀₋x(SbSI)x glasses is basically built just of binary GeS4, SbS3 and SbI3 structural groups and contains a small amount of molecular fragments with homopolar Ge - Ge and S - S bonds. The phase structure arising in the glass matrix at crystallization corresponds to the structure of crystalline SbSI. 2014 Article Raman spectroscopy and X-ray diffraction studies of (GeS₂)₁₀₀₋x(SbSI)x glasses and composites on their basis / V.M. Rubish, V.O. Stefanovich, V.M. Maryan, O.A. Mykaylo, P.P. Shtets, D.I. Kaynts, I.M. Yurkin // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2014. — Т. 17, № 1. — С. 61-66. — Бібліогр.: 38 назв. — англ. 1560-8034 PACS 61.43.Fs, 61.46.Bc, 77.84.Bw, 78.30.Ly http://dspace.nbuv.gov.ua/handle/123456789/118348 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
institution Digital Library of Periodicals of National Academy of Sciences of Ukraine
collection DSpace DC
language English
description The structure and structural changes under the isothermal annealing of (GeS₂)₁₀₀₋x(SbSI)x (0 ≤ x ≤ 90) glasses were investigated by Raman spectroscopy and X-ray diffraction methods. The nanoheterogeneous nature of these glasses structure has been revealed. The matrix of (GeS₂)₁₀₀₋x(SbSI)x glasses is basically built just of binary GeS4, SbS3 and SbI3 structural groups and contains a small amount of molecular fragments with homopolar Ge - Ge and S - S bonds. The phase structure arising in the glass matrix at crystallization corresponds to the structure of crystalline SbSI.
format Article
author Rubish, V.M.
Stefanovich, V.O.
Maryan, V.M.
Mykaylo, O.A.
Shtets, P.P.
Kaynts, D.I.
Yurkin, I.M.
spellingShingle Rubish, V.M.
Stefanovich, V.O.
Maryan, V.M.
Mykaylo, O.A.
Shtets, P.P.
Kaynts, D.I.
Yurkin, I.M.
Raman spectroscopy and X-ray diffraction studies of (GeS₂)₁₀₀₋x(SbSI)x glasses and composites on their basis
Semiconductor Physics Quantum Electronics & Optoelectronics
author_facet Rubish, V.M.
Stefanovich, V.O.
Maryan, V.M.
Mykaylo, O.A.
Shtets, P.P.
Kaynts, D.I.
Yurkin, I.M.
author_sort Rubish, V.M.
title Raman spectroscopy and X-ray diffraction studies of (GeS₂)₁₀₀₋x(SbSI)x glasses and composites on their basis
title_short Raman spectroscopy and X-ray diffraction studies of (GeS₂)₁₀₀₋x(SbSI)x glasses and composites on their basis
title_full Raman spectroscopy and X-ray diffraction studies of (GeS₂)₁₀₀₋x(SbSI)x glasses and composites on their basis
title_fullStr Raman spectroscopy and X-ray diffraction studies of (GeS₂)₁₀₀₋x(SbSI)x glasses and composites on their basis
title_full_unstemmed Raman spectroscopy and X-ray diffraction studies of (GeS₂)₁₀₀₋x(SbSI)x glasses and composites on their basis
title_sort raman spectroscopy and x-ray diffraction studies of (ges₂)₁₀₀₋x(sbsi)x glasses and composites on their basis
publisher Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
publishDate 2014
url http://dspace.nbuv.gov.ua/handle/123456789/118348
citation_txt Raman spectroscopy and X-ray diffraction studies of (GeS₂)₁₀₀₋x(SbSI)x glasses and composites on their basis / V.M. Rubish, V.O. Stefanovich, V.M. Maryan, O.A. Mykaylo, P.P. Shtets, D.I. Kaynts, I.M. Yurkin // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2014. — Т. 17, № 1. — С. 61-66. — Бібліогр.: 38 назв. — англ.
series Semiconductor Physics Quantum Electronics & Optoelectronics
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last_indexed 2023-10-18T20:31:46Z
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