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Concentration-size dependences for the electron energy in AlxGa₁₋xAs/GaAs/AlxGa₁₋xAs nanofilms
Using approximation of dielectric continuum and the Green function method, studied in this work is the influence of electron-phonon interaction on position of the bottom of the ground energy band for electron in the quantum well of a finite depth. Considering the example of a plain nano-heterostr...
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2014
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| Series: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Online Access: | http://dspace.nbuv.gov.ua/handle/123456789/118365 |
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irk-123456789-1183652017-05-31T03:03:53Z Concentration-size dependences for the electron energy in AlxGa₁₋xAs/GaAs/AlxGa₁₋xAs nanofilms Kondryuk, D.V. Kramar, V.M. Kroitor, O.P. Using approximation of dielectric continuum and the Green function method, studied in this work is the influence of electron-phonon interaction on position of the bottom of the ground energy band for electron in the quantum well of a finite depth. Considering the example of a plain nano-heterostructure with a quantum well based on the double heterojunction AlxGa₁₋xAs/GaAs (nanofilm), the authors have calculated the electron energy for a varied thickness of the film. It has been studied the influence of barrier material composition as well as electron-phonon interaction on the electron energy 2014 Article Concentration-size dependences for the electron energy in AlxGa₁₋xAs/GaAs/AlxGa₁₋xAs nanofilms / D.V. Kondryuk, V.M. Kramar, O.P. Kroitor // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2014. — Т. 17, № 2. — С. 160-164. — Бібліогр.: 17 назв. — англ. 1560-8034 PACS 63.20.Kr, 79.60 Jv http://dspace.nbuv.gov.ua/handle/123456789/118365 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine |
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English |
| description |
Using approximation of dielectric continuum and the Green function method,
studied in this work is the influence of electron-phonon interaction on position of the
bottom of the ground energy band for electron in the quantum well of a finite depth.
Considering the example of a plain nano-heterostructure with a quantum well based on
the double heterojunction AlxGa₁₋xAs/GaAs (nanofilm), the authors have calculated the
electron energy for a varied thickness of the film. It has been studied the influence of
barrier material composition as well as electron-phonon interaction on the electron
energy |
| format |
Article |
| author |
Kondryuk, D.V. Kramar, V.M. Kroitor, O.P. |
| spellingShingle |
Kondryuk, D.V. Kramar, V.M. Kroitor, O.P. Concentration-size dependences for the electron energy in AlxGa₁₋xAs/GaAs/AlxGa₁₋xAs nanofilms Semiconductor Physics Quantum Electronics & Optoelectronics |
| author_facet |
Kondryuk, D.V. Kramar, V.M. Kroitor, O.P. |
| author_sort |
Kondryuk, D.V. |
| title |
Concentration-size dependences for the electron energy in AlxGa₁₋xAs/GaAs/AlxGa₁₋xAs nanofilms |
| title_short |
Concentration-size dependences for the electron energy in AlxGa₁₋xAs/GaAs/AlxGa₁₋xAs nanofilms |
| title_full |
Concentration-size dependences for the electron energy in AlxGa₁₋xAs/GaAs/AlxGa₁₋xAs nanofilms |
| title_fullStr |
Concentration-size dependences for the electron energy in AlxGa₁₋xAs/GaAs/AlxGa₁₋xAs nanofilms |
| title_full_unstemmed |
Concentration-size dependences for the electron energy in AlxGa₁₋xAs/GaAs/AlxGa₁₋xAs nanofilms |
| title_sort |
concentration-size dependences for the electron energy in alxga₁₋xas/gaas/alxga₁₋xas nanofilms |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| publishDate |
2014 |
| url |
http://dspace.nbuv.gov.ua/handle/123456789/118365 |
| citation_txt |
Concentration-size dependences for the electron energy in AlxGa₁₋xAs/GaAs/AlxGa₁₋xAs nanofilms / D.V. Kondryuk, V.M. Kramar, O.P. Kroitor // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2014. — Т. 17, № 2. — С. 160-164. — Бібліогр.: 17 назв. — англ. |
| series |
Semiconductor Physics Quantum Electronics & Optoelectronics |
| work_keys_str_mv |
AT kondryukdv concentrationsizedependencesfortheelectronenergyinalxga1xasgaasalxga1xasnanofilms AT kramarvm concentrationsizedependencesfortheelectronenergyinalxga1xasgaasalxga1xasnanofilms AT kroitorop concentrationsizedependencesfortheelectronenergyinalxga1xasgaasalxga1xasnanofilms |
| first_indexed |
2023-10-18T20:31:58Z |
| last_indexed |
2023-10-18T20:31:58Z |
| _version_ |
1796150447532146688 |