Quantum-sized effects in oxidized silicon structures with surface II-VI nanocrystals

• Дата: 2014
• Автори: Karachevtseva, L., Kuchmii, S., Kolyadina, O., Lytvynenko, O., Matveeva, L., Sapelnikova, O., Smirnov, O., Stroyuk, O.
• Формат: Стаття
• Мова: English
• Опубліковано: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2014
• Назва видання: Semiconductor Physics Quantum Electronics & Optoelectronics
• Онлайн доступ: http://dspace.nbuv.gov.ua/handle/123456789/118367
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Цитувати: Quantum-sized effects in oxidized silicon structures with surface II-VI nanocrystals / L. Karachevtseva, S. Kuchmii, O. Kolyadina, O. Lytvynenko, L. Matveeva, O. Sapelnikova, O. Smirnov, O. Stroyuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2014. — Т. 17, № 2. — С. 168-173. — Бібліогр.: 11 назв. — англ.

The Si-SiO₂ interface in oxidized macroporous silicon structures with surface CdS and ZnO nanocrystals was investigated using the methods of electroreflectance and photoconductivity. The Franz-Keldysh effect, built-in electric field and surface quantization of charge carriers in the Si-SiO₂ region were revealed. The splitting of photoconductivity peaks was detected in the area of indirect band-to-band transition due to quantization of charge carriers in the surface silicon region, too. The latter data correlate with the results of the electroreflectance spectra measurements in the area of direct interband transition of oxidized macroporous silicon structures with surface CdS and ZnO nanocrystals.