Quantum-sized effects in oxidized silicon structures with surface II-VI nanocrystals
The Si-SiO₂ interface in oxidized macroporous silicon structures with surface CdS and ZnO nanocrystals was investigated using the methods of electroreflectance and photoconductivity. The Franz-Keldysh effect, built-in electric field and surface quantization of charge carriers in the Si-SiO₂ regio...
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| Дата: | 2014 |
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| Автори: | , , , , , , , |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2014
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| Назва видання: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/118367 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Quantum-sized effects in oxidized silicon structures with surface II-VI nanocrystals / L. Karachevtseva, S. Kuchmii, O. Kolyadina, O. Lytvynenko, L. Matveeva, O. Sapelnikova, O. Smirnov, O. Stroyuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2014. — Т. 17, № 2. — С. 168-173. — Бібліогр.: 11 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
irk-123456789-118367 |
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irk-123456789-1183672017-05-31T03:06:50Z Quantum-sized effects in oxidized silicon structures with surface II-VI nanocrystals Karachevtseva, L. Kuchmii, S. Kolyadina, O. Lytvynenko, O. Matveeva, L. Sapelnikova, O. Smirnov, O. Stroyuk, O. The Si-SiO₂ interface in oxidized macroporous silicon structures with surface CdS and ZnO nanocrystals was investigated using the methods of electroreflectance and photoconductivity. The Franz-Keldysh effect, built-in electric field and surface quantization of charge carriers in the Si-SiO₂ region were revealed. The splitting of photoconductivity peaks was detected in the area of indirect band-to-band transition due to quantization of charge carriers in the surface silicon region, too. The latter data correlate with the results of the electroreflectance spectra measurements in the area of direct interband transition of oxidized macroporous silicon structures with surface CdS and ZnO nanocrystals. 2014 Article Quantum-sized effects in oxidized silicon structures with surface II-VI nanocrystals / L. Karachevtseva, S. Kuchmii, O. Kolyadina, O. Lytvynenko, L. Matveeva, O. Sapelnikova, O. Smirnov, O. Stroyuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2014. — Т. 17, № 2. — С. 168-173. — Бібліогр.: 11 назв. — англ. 1560-8034 PACS 71.70.Ej, 78.20.Jq http://dspace.nbuv.gov.ua/handle/123456789/118367 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| language |
English |
| description |
The Si-SiO₂ interface in oxidized macroporous silicon structures with surface
CdS and ZnO nanocrystals was investigated using the methods of electroreflectance and
photoconductivity. The Franz-Keldysh effect, built-in electric field and surface
quantization of charge carriers in the Si-SiO₂ region were revealed. The splitting of
photoconductivity peaks was detected in the area of indirect band-to-band transition due
to quantization of charge carriers in the surface silicon region, too. The latter data
correlate with the results of the electroreflectance spectra measurements in the area of
direct interband transition of oxidized macroporous silicon structures with surface CdS
and ZnO nanocrystals. |
| format |
Article |
| author |
Karachevtseva, L. Kuchmii, S. Kolyadina, O. Lytvynenko, O. Matveeva, L. Sapelnikova, O. Smirnov, O. Stroyuk, O. |
| spellingShingle |
Karachevtseva, L. Kuchmii, S. Kolyadina, O. Lytvynenko, O. Matveeva, L. Sapelnikova, O. Smirnov, O. Stroyuk, O. Quantum-sized effects in oxidized silicon structures with surface II-VI nanocrystals Semiconductor Physics Quantum Electronics & Optoelectronics |
| author_facet |
Karachevtseva, L. Kuchmii, S. Kolyadina, O. Lytvynenko, O. Matveeva, L. Sapelnikova, O. Smirnov, O. Stroyuk, O. |
| author_sort |
Karachevtseva, L. |
| title |
Quantum-sized effects in oxidized silicon structures with surface II-VI nanocrystals |
| title_short |
Quantum-sized effects in oxidized silicon structures with surface II-VI nanocrystals |
| title_full |
Quantum-sized effects in oxidized silicon structures with surface II-VI nanocrystals |
| title_fullStr |
Quantum-sized effects in oxidized silicon structures with surface II-VI nanocrystals |
| title_full_unstemmed |
Quantum-sized effects in oxidized silicon structures with surface II-VI nanocrystals |
| title_sort |
quantum-sized effects in oxidized silicon structures with surface ii-vi nanocrystals |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| publishDate |
2014 |
| url |
http://dspace.nbuv.gov.ua/handle/123456789/118367 |
| citation_txt |
Quantum-sized effects in oxidized silicon structures
with surface II-VI nanocrystals / L. Karachevtseva, S. Kuchmii, O. Kolyadina, O. Lytvynenko, L. Matveeva, O. Sapelnikova, O. Smirnov, O. Stroyuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2014. — Т. 17, № 2. — С. 168-173. — Бібліогр.: 11 назв. — англ. |
| series |
Semiconductor Physics Quantum Electronics & Optoelectronics |
| work_keys_str_mv |
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2023-10-18T20:31:58Z |
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2023-10-18T20:31:58Z |
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