Temperature changes in the function of the shape inherent to the band of exciton absorption in nanofilm of layered semiconductor
Represented in this paper is the method and results of theoretical investigations aimed at the influence of spatial confinement effects, self-polarization of heterojunction planes as well as exciton-phonon interaction on the position and shape of the band corresponding to exciton absorption in na...
Збережено в:
| Видавець: | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
|---|---|
| Дата: | 2014 |
| Автори: | , , |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2014
|
| Назва видання: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/118372 |
| Теги: |
Додати тег
Немає тегів, Будьте першим, хто поставить тег для цього запису!
|
| Цитувати: | Temperature changes in the function of the shape inherent to the band of exciton absorption in nanofilm of layered semiconductor / A.V. Derevyanchuk, O.V. Pugantseva, V.M. Kramar // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2014. — Т. 17, № 2. — С. 188-192. — Бібліогр.: 21 назв. — англ. |
Репозиторії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
irk-123456789-118372 |
|---|---|
| record_format |
dspace |
| spelling |
irk-123456789-1183722017-05-31T03:07:03Z Temperature changes in the function of the shape inherent to the band of exciton absorption in nanofilm of layered semiconductor Derevyanchuk, A.V. Pugantseva, O.V. Kramar, V.M. Represented in this paper is the method and results of theoretical investigations aimed at the influence of spatial confinement effects, self-polarization of heterojunction planes as well as exciton-phonon interaction on the position and shape of the band corresponding to exciton absorption in nanofilms of layered semiconductor in a dielectric matrix. The heterojunction is considered as unloaded, the nanosystem is modeled by an infinitely deep quantum well and characterized by an essential difference between dielectric permittivities on both sides of the heterojunction. Calculated in this work are the dependences for the form-function of the absorption band on the thickness of lead iodide nanofilm embedded into polymer E-MAA or glass, and on its temperature. The results of calculations are in good accordance with known data of experimental measurements. 2014 Article Temperature changes in the function of the shape inherent to the band of exciton absorption in nanofilm of layered semiconductor / A.V. Derevyanchuk, O.V. Pugantseva, V.M. Kramar // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2014. — Т. 17, № 2. — С. 188-192. — Бібліогр.: 21 назв. — англ. 1560-8034 PACS 73.21.Fg http://dspace.nbuv.gov.ua/handle/123456789/118372 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| language |
English |
| description |
Represented in this paper is the method and results of theoretical
investigations aimed at the influence of spatial confinement effects, self-polarization of
heterojunction planes as well as exciton-phonon interaction on the position and shape of
the band corresponding to exciton absorption in nanofilms of layered semiconductor in a
dielectric matrix. The heterojunction is considered as unloaded, the nanosystem is
modeled by an infinitely deep quantum well and characterized by an essential difference
between dielectric permittivities on both sides of the heterojunction. Calculated in this
work are the dependences for the form-function of the absorption band on the thickness
of lead iodide nanofilm embedded into polymer E-MAA or glass, and on its temperature.
The results of calculations are in good accordance with known data of experimental
measurements. |
| format |
Article |
| author |
Derevyanchuk, A.V. Pugantseva, O.V. Kramar, V.M. |
| spellingShingle |
Derevyanchuk, A.V. Pugantseva, O.V. Kramar, V.M. Temperature changes in the function of the shape inherent to the band of exciton absorption in nanofilm of layered semiconductor Semiconductor Physics Quantum Electronics & Optoelectronics |
| author_facet |
Derevyanchuk, A.V. Pugantseva, O.V. Kramar, V.M. |
| author_sort |
Derevyanchuk, A.V. |
| title |
Temperature changes in the function of the shape inherent to the band of exciton absorption in nanofilm of layered semiconductor |
| title_short |
Temperature changes in the function of the shape inherent to the band of exciton absorption in nanofilm of layered semiconductor |
| title_full |
Temperature changes in the function of the shape inherent to the band of exciton absorption in nanofilm of layered semiconductor |
| title_fullStr |
Temperature changes in the function of the shape inherent to the band of exciton absorption in nanofilm of layered semiconductor |
| title_full_unstemmed |
Temperature changes in the function of the shape inherent to the band of exciton absorption in nanofilm of layered semiconductor |
| title_sort |
temperature changes in the function of the shape inherent to the band of exciton absorption in nanofilm of layered semiconductor |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| publishDate |
2014 |
| url |
http://dspace.nbuv.gov.ua/handle/123456789/118372 |
| citation_txt |
Temperature changes in the function of the shape inherent
to the band of exciton absorption in nanofilm
of layered semiconductor / A.V. Derevyanchuk, O.V. Pugantseva, V.M. Kramar // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2014. — Т. 17, № 2. — С. 188-192. — Бібліогр.: 21 назв. — англ. |
| series |
Semiconductor Physics Quantum Electronics & Optoelectronics |
| work_keys_str_mv |
AT derevyanchukav temperaturechangesinthefunctionoftheshapeinherenttothebandofexcitonabsorptioninnanofilmoflayeredsemiconductor AT pugantsevaov temperaturechangesinthefunctionoftheshapeinherenttothebandofexcitonabsorptioninnanofilmoflayeredsemiconductor AT kramarvm temperaturechangesinthefunctionoftheshapeinherenttothebandofexcitonabsorptioninnanofilmoflayeredsemiconductor |
| first_indexed |
2023-10-18T20:31:59Z |
| last_indexed |
2023-10-18T20:31:59Z |
| _version_ |
1796150448165486592 |