Variation of optical parameters of multilayer structures with thin silicon layers at laser annealing
The experimental data on Raman scattering (RS) and optical absorption in structures with thin silicon layers on various substrates, as well as in multilayer quartz/Si/SiO₂, SiC/Si/SiO₂ and glass/Si₃N₄/Si/SiO₂ structures, are summarized. It is shown that laser annealing on the above structures lea...
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| Дата: | 2014 |
|---|---|
| Автор: | |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2014
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| Назва видання: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/118373 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Variation of optical parameters of multilayer structures with thin silicon layers at laser annealing / O.B. Okhrimenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2014. — Т. 17, № 2. — С. 200-204. — Бібліогр.: 13 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
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|---|---|
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dspace |
| spelling |
irk-123456789-1183732017-05-31T03:07:07Z Variation of optical parameters of multilayer structures with thin silicon layers at laser annealing Okhrimenko, O.B. The experimental data on Raman scattering (RS) and optical absorption in structures with thin silicon layers on various substrates, as well as in multilayer quartz/Si/SiO₂, SiC/Si/SiO₂ and glass/Si₃N₄/Si/SiO₂ structures, are summarized. It is shown that laser annealing on the above structures leads to changes in spectra of RS and optical transmission that can be explained within the critical action model. The value of critical action of laser radiation is determined for the structures studied. 2014 Article Variation of optical parameters of multilayer structures with thin silicon layers at laser annealing / O.B. Okhrimenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2014. — Т. 17, № 2. — С. 200-204. — Бібліогр.: 13 назв. — англ. 1560-8034 PACS 71.20.Nr, 78.40.Fy http://dspace.nbuv.gov.ua/handle/123456789/118373 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| language |
English |
| description |
The experimental data on Raman scattering (RS) and optical absorption in
structures with thin silicon layers on various substrates, as well as in multilayer
quartz/Si/SiO₂, SiC/Si/SiO₂ and glass/Si₃N₄/Si/SiO₂ structures, are summarized. It is
shown that laser annealing on the above structures leads to changes in spectra of RS and
optical transmission that can be explained within the critical action model. The value of
critical action of laser radiation is determined for the structures studied. |
| format |
Article |
| author |
Okhrimenko, O.B. |
| spellingShingle |
Okhrimenko, O.B. Variation of optical parameters of multilayer structures with thin silicon layers at laser annealing Semiconductor Physics Quantum Electronics & Optoelectronics |
| author_facet |
Okhrimenko, O.B. |
| author_sort |
Okhrimenko, O.B. |
| title |
Variation of optical parameters of multilayer structures with thin silicon layers at laser annealing |
| title_short |
Variation of optical parameters of multilayer structures with thin silicon layers at laser annealing |
| title_full |
Variation of optical parameters of multilayer structures with thin silicon layers at laser annealing |
| title_fullStr |
Variation of optical parameters of multilayer structures with thin silicon layers at laser annealing |
| title_full_unstemmed |
Variation of optical parameters of multilayer structures with thin silicon layers at laser annealing |
| title_sort |
variation of optical parameters of multilayer structures with thin silicon layers at laser annealing |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| publishDate |
2014 |
| url |
http://dspace.nbuv.gov.ua/handle/123456789/118373 |
| citation_txt |
Variation of optical parameters of multilayer structures
with thin silicon layers at laser annealing / O.B. Okhrimenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2014. — Т. 17, № 2. — С. 200-204. — Бібліогр.: 13 назв. — англ. |
| series |
Semiconductor Physics Quantum Electronics & Optoelectronics |
| work_keys_str_mv |
AT okhrimenkoob variationofopticalparametersofmultilayerstructureswiththinsiliconlayersatlaserannealing |
| first_indexed |
2023-10-18T20:31:59Z |
| last_indexed |
2023-10-18T20:31:59Z |
| _version_ |
1796150448271392768 |