Acoustic-emission method for controlling the defect-formation process in light-emitting structures
Сomplex researches of light-emitting structures based on А₃В₅ compounds have been carried out. It has been shown that at current loading exceeding the acousticemission threshold, there arises a change in the electroluminescence intensity, fluctuation of current and light. It has been ascertained...
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| Дата: | 2010 |
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| Автори: | , , , |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2010
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| Назва видання: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/118399 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Acoustic-emission method for controlling the defect-formation process in light-emitting structures / O.V. Lyashenko, A.I. Vlasenko, V.P. Veleschuk, M.P. Kisseluk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2010. — Т. 13, № 3. — С. 326-329. — Бібліогр.: 4 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
irk-123456789-118399 |
|---|---|
| record_format |
dspace |
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irk-123456789-1183992017-05-31T03:06:47Z Acoustic-emission method for controlling the defect-formation process in light-emitting structures Lyashenko, O.V. Vlasenko, A.I. Veleschuk, V.P. Kisseluk, M.P. Сomplex researches of light-emitting structures based on А₃В₅ compounds have been carried out. It has been shown that at current loading exceeding the acousticemission threshold, there arises a change in the electroluminescence intensity, fluctuation of current and light. It has been ascertained that natural ageing leads to a general improvement of some practically important parameters of light-emitting structures, in particular to increase of maximal admissible currents and reliability. 2010 Article Acoustic-emission method for controlling the defect-formation process in light-emitting structures / O.V. Lyashenko, A.I. Vlasenko, V.P. Veleschuk, M.P. Kisseluk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2010. — Т. 13, № 3. — С. 326-329. — Бібліогр.: 4 назв. — англ. 1560-8034 PACS 43.35.+d, 43.50.+y, 72.70.+m, 73.50.TD, 78.60.Fi, 78.66.Fd http://dspace.nbuv.gov.ua/handle/123456789/118399 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| language |
English |
| description |
Сomplex researches of light-emitting structures based on А₃В₅ compounds
have been carried out. It has been shown that at current loading exceeding the acousticemission
threshold, there arises a change in the electroluminescence intensity, fluctuation
of current and light. It has been ascertained that natural ageing leads to a general
improvement of some practically important parameters of light-emitting structures, in
particular to increase of maximal admissible currents and reliability. |
| format |
Article |
| author |
Lyashenko, O.V. Vlasenko, A.I. Veleschuk, V.P. Kisseluk, M.P. |
| spellingShingle |
Lyashenko, O.V. Vlasenko, A.I. Veleschuk, V.P. Kisseluk, M.P. Acoustic-emission method for controlling the defect-formation process in light-emitting structures Semiconductor Physics Quantum Electronics & Optoelectronics |
| author_facet |
Lyashenko, O.V. Vlasenko, A.I. Veleschuk, V.P. Kisseluk, M.P. |
| author_sort |
Lyashenko, O.V. |
| title |
Acoustic-emission method for controlling the defect-formation process in light-emitting structures |
| title_short |
Acoustic-emission method for controlling the defect-formation process in light-emitting structures |
| title_full |
Acoustic-emission method for controlling the defect-formation process in light-emitting structures |
| title_fullStr |
Acoustic-emission method for controlling the defect-formation process in light-emitting structures |
| title_full_unstemmed |
Acoustic-emission method for controlling the defect-formation process in light-emitting structures |
| title_sort |
acoustic-emission method for controlling the defect-formation process in light-emitting structures |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| publishDate |
2010 |
| url |
http://dspace.nbuv.gov.ua/handle/123456789/118399 |
| citation_txt |
Acoustic-emission method for controlling the defect-formation
process in light-emitting structures / O.V. Lyashenko, A.I. Vlasenko, V.P. Veleschuk, M.P. Kisseluk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2010. — Т. 13, № 3. — С. 326-329. — Бібліогр.: 4 назв. — англ. |
| series |
Semiconductor Physics Quantum Electronics & Optoelectronics |
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| first_indexed |
2023-10-18T20:32:03Z |
| last_indexed |
2023-10-18T20:32:03Z |
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