Structural and optical properties of Zn₁₋xCoxO thin films prepared by RF reactive sputtering technique
We have reported the effect of Co doping on structural and optical properties of ZnO thin films prepared by the RF reactive sputtering technique. The composite targets were formed by mixing and pressing ZnO and CoO powders. The thin films were deposited on silica and glass substrates. The structu...
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| Дата: | 2014 |
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| Автори: | , , , , |
| Формат: | Стаття |
| Мова: | English |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2014
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| Назва видання: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/118411 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Structural and optical properties of Zn₁₋xCoxO thin films prepared by RF reactive sputtering technique / A.I. Savchuk, I.D. Stolyarchuk, I. Stefanuk, B. Cieniek, E. Sheregii // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2014. — Т. 17, № 4. — С. 353-357. — Бібліогр.: 31 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
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irk-123456789-1184112017-05-31T03:05:24Z Structural and optical properties of Zn₁₋xCoxO thin films prepared by RF reactive sputtering technique Savchuk, A.I. Stolyarchuk, I.D. Stefanuk, I. Cieniek, B. Sheregii, E. We have reported the effect of Co doping on structural and optical properties of ZnO thin films prepared by the RF reactive sputtering technique. The composite targets were formed by mixing and pressing ZnO and CoO powders. The thin films were deposited on silica and glass substrates. The structures of samples have been studied by using X-ray diffraction (XRD) and atomic force microscopy (AFM). With the sensitivity of the XRD instruments, the structural analyses of Co-doped ZnO films reveal formation of predominant (002) reflection corresponding to the hexagonal wurtzite structure without any secondary phase. The AFM study showed that surface morphology of the Zn₁₋xCoxO films is composed of closely packed nanocrystallites with nanorod shape. The optical properties of the samples were studied using UV-vis absorption and PL spectra. The optical absorption spectra show a red shift of the band edge, which indicates that Co²⁺ ions substitute Zn²⁺ ions in ZnO lattice. In the room-temperature photoluminescence spectra, four main peaks were revealed in all the samples, which are attributed to ultraviolet, violet-blue, blue and green emission. 2014 Article Structural and optical properties of Zn₁₋xCoxO thin films prepared by RF reactive sputtering technique / A.I. Savchuk, I.D. Stolyarchuk, I. Stefanuk, B. Cieniek, E. Sheregii // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2014. — Т. 17, № 4. — С. 353-357. — Бібліогр.: 31 назв. — англ. 1560-8034 PACS 42.25.Bs, 61.05.cp, 78.55.Hx http://dspace.nbuv.gov.ua/handle/123456789/118411 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| language |
English |
| description |
We have reported the effect of Co doping on structural and optical properties
of ZnO thin films prepared by the RF reactive sputtering technique. The composite
targets were formed by mixing and pressing ZnO and CoO powders. The thin films were
deposited on silica and glass substrates. The structures of samples have been studied by
using X-ray diffraction (XRD) and atomic force microscopy (AFM). With the sensitivity
of the XRD instruments, the structural analyses of Co-doped ZnO films reveal formation
of predominant (002) reflection corresponding to the hexagonal wurtzite structure
without any secondary phase. The AFM study showed that surface morphology of the
Zn₁₋xCoxO films is composed of closely packed nanocrystallites with nanorod shape.
The optical properties of the samples were studied using UV-vis absorption and PL
spectra. The optical absorption spectra show a red shift of the band edge, which indicates
that Co²⁺ ions substitute Zn²⁺ ions in ZnO lattice. In the room-temperature photoluminescence
spectra, four main peaks were revealed in all the samples, which are
attributed to ultraviolet, violet-blue, blue and green emission. |
| format |
Article |
| author |
Savchuk, A.I. Stolyarchuk, I.D. Stefanuk, I. Cieniek, B. Sheregii, E. |
| spellingShingle |
Savchuk, A.I. Stolyarchuk, I.D. Stefanuk, I. Cieniek, B. Sheregii, E. Structural and optical properties of Zn₁₋xCoxO thin films prepared by RF reactive sputtering technique Semiconductor Physics Quantum Electronics & Optoelectronics |
| author_facet |
Savchuk, A.I. Stolyarchuk, I.D. Stefanuk, I. Cieniek, B. Sheregii, E. |
| author_sort |
Savchuk, A.I. |
| title |
Structural and optical properties of Zn₁₋xCoxO thin films prepared by RF reactive sputtering technique |
| title_short |
Structural and optical properties of Zn₁₋xCoxO thin films prepared by RF reactive sputtering technique |
| title_full |
Structural and optical properties of Zn₁₋xCoxO thin films prepared by RF reactive sputtering technique |
| title_fullStr |
Structural and optical properties of Zn₁₋xCoxO thin films prepared by RF reactive sputtering technique |
| title_full_unstemmed |
Structural and optical properties of Zn₁₋xCoxO thin films prepared by RF reactive sputtering technique |
| title_sort |
structural and optical properties of zn₁₋xcoxo thin films prepared by rf reactive sputtering technique |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| publishDate |
2014 |
| url |
http://dspace.nbuv.gov.ua/handle/123456789/118411 |
| citation_txt |
Structural and optical properties of Zn₁₋xCoxO thin films prepared by RF reactive sputtering technique / A.I. Savchuk, I.D. Stolyarchuk, I. Stefanuk, B. Cieniek, E. Sheregii // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2014. — Т. 17, № 4. — С. 353-357. — Бібліогр.: 31 назв. — англ. |
| series |
Semiconductor Physics Quantum Electronics & Optoelectronics |
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2023-10-18T20:32:04Z |
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