Photoconductivity mechanism in structures with Ge-nanoclusters grown on Si(100) surface
Interband optical transitions in the epitaxial Si/Ge heterostructures with Ge nanoislands grown on Si(100) surface were investigated using photocurrent spectroscopy. The mechanism of photoconductivity was discussed. It was shown that electron transitions from the ground state of the valence band...
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| Дата: | 2014 |
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| Автори: | , , , , |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2014
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| Назва видання: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/118412 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Photoconductivity mechanism in structures with Ge-nanoclusters grown on Si(100) surface / Ye.Ye. Melnichuk, Yu.V. Hyrka, S.V. Kondratenko, Yu.N. Kozyrev, V.S. Lysenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2014. — Т. 17, № 4. — С. 331-335. — Бібліогр.: 10 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
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irk-123456789-1184122017-05-31T03:03:14Z Photoconductivity mechanism in structures with Ge-nanoclusters grown on Si(100) surface Melnichuk, Ye.Ye. Hyrka, Yu.V. Kondratenko, S.V. Kozyrev, Yu.N. Lysenko, V.S. Interband optical transitions in the epitaxial Si/Ge heterostructures with Ge nanoislands grown on Si(100) surface were investigated using photocurrent spectroscopy. The mechanism of photoconductivity was discussed. It was shown that electron transitions from the ground state of the valence band in a quantum dot to the conduction band of Si surrounding make the main contribution into monopolar photoconductivity below the fundamental absorption edge of crystalline Si. Photoexcited holes were found to be localized in Ge nanoislands inducing the lateral conductivity changes in the near-surface depletion layer of p-Si substrate due to the field-effect. 2014 Article Photoconductivity mechanism in structures with Ge-nanoclusters grown on Si(100) surface / Ye.Ye. Melnichuk, Yu.V. Hyrka, S.V. Kondratenko, Yu.N. Kozyrev, V.S. Lysenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2014. — Т. 17, № 4. — С. 331-335. — Бібліогр.: 10 назв. — англ. 1560-8034 PACS 72.40.+w, 73.63.Kv, 78.67.Bf http://dspace.nbuv.gov.ua/handle/123456789/118412 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| language |
English |
| description |
Interband optical transitions in the epitaxial Si/Ge heterostructures with Ge
nanoislands grown on Si(100) surface were investigated using photocurrent
spectroscopy. The mechanism of photoconductivity was discussed. It was shown that
electron transitions from the ground state of the valence band in a quantum dot to the
conduction band of Si surrounding make the main contribution into monopolar
photoconductivity below the fundamental absorption edge of crystalline Si. Photoexcited
holes were found to be localized in Ge nanoislands inducing the lateral conductivity
changes in the near-surface depletion layer of p-Si substrate due to the field-effect. |
| format |
Article |
| author |
Melnichuk, Ye.Ye. Hyrka, Yu.V. Kondratenko, S.V. Kozyrev, Yu.N. Lysenko, V.S. |
| spellingShingle |
Melnichuk, Ye.Ye. Hyrka, Yu.V. Kondratenko, S.V. Kozyrev, Yu.N. Lysenko, V.S. Photoconductivity mechanism in structures with Ge-nanoclusters grown on Si(100) surface Semiconductor Physics Quantum Electronics & Optoelectronics |
| author_facet |
Melnichuk, Ye.Ye. Hyrka, Yu.V. Kondratenko, S.V. Kozyrev, Yu.N. Lysenko, V.S. |
| author_sort |
Melnichuk, Ye.Ye. |
| title |
Photoconductivity mechanism in structures with Ge-nanoclusters grown on Si(100) surface |
| title_short |
Photoconductivity mechanism in structures with Ge-nanoclusters grown on Si(100) surface |
| title_full |
Photoconductivity mechanism in structures with Ge-nanoclusters grown on Si(100) surface |
| title_fullStr |
Photoconductivity mechanism in structures with Ge-nanoclusters grown on Si(100) surface |
| title_full_unstemmed |
Photoconductivity mechanism in structures with Ge-nanoclusters grown on Si(100) surface |
| title_sort |
photoconductivity mechanism in structures with ge-nanoclusters grown on si(100) surface |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| publishDate |
2014 |
| url |
http://dspace.nbuv.gov.ua/handle/123456789/118412 |
| citation_txt |
Photoconductivity mechanism in structures
with Ge-nanoclusters grown on Si(100) surface / Ye.Ye. Melnichuk, Yu.V. Hyrka, S.V. Kondratenko, Yu.N. Kozyrev, V.S. Lysenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2014. — Т. 17, № 4. — С. 331-335. — Бібліогр.: 10 назв. — англ. |
| series |
Semiconductor Physics Quantum Electronics & Optoelectronics |
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| first_indexed |
2023-10-18T20:32:04Z |
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2023-10-18T20:32:04Z |
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