Nickel-induced enhancement of photoluminescence in nc-Si–SiOx nanostructures

Nickel-induced enhancement of photoluminescence in nc-Si–SiOx nanostructures

The effect of nickel silicide interlayer on the intensity of photoluminescence (PL) from Si nanoclusters (nc) in normally deposited and obliquely deposited in vacuum SiOx/Ni/Si structures have been studied using spectral and time-resolved PL measurements. It has been shown that the intensity of PL b...

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Дата:2014
Автори: Michailovska, K.V., Indutnyi, I.Z., Shepeliavyi, P.E., Dan’ko, V.A.
Формат: Стаття
Мова:English
Опубліковано: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2014
Назва видання:Semiconductor Physics Quantum Electronics & Optoelectronics
Онлайн доступ:http://dspace.nbuv.gov.ua/handle/123456789/118413
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Назва журналу:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Цитувати:Nickel-induced enhancement of photoluminescence in nc-Si–SiOx nanostructures / K.V. Michailovska, I.Z. Indutnyi, P.E. Shepeliavyi, V.A. Dan'ko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2014. — Т. 17, № 4. — С. 336-340. — Бібліогр.: 24 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine
id irk-123456789-118413
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spelling irk-123456789-1184132017-05-31T03:03:15Z Nickel-induced enhancement of photoluminescence in nc-Si–SiOx nanostructures Michailovska, K.V. Indutnyi, I.Z. Shepeliavyi, P.E. Dan’ko, V.A. The effect of nickel silicide interlayer on the intensity of photoluminescence (PL) from Si nanoclusters (nc) in normally deposited and obliquely deposited in vacuum SiOx/Ni/Si structures have been studied using spectral and time-resolved PL measurements. It has been shown that the intensity of PL band in SiOx/Ni/Si samples is essentially higher than that in reference SiOx/Si samples (without the nickel interlayer) with the same characteristics and treatment. The PL intensity enhancement factor is equal to 5.77 for normally deposited samples and 18 for obliquely deposited samples. The unchanged spectral shape of PL bands and similar position of PL maximum in samples with and without nickel silicide interlayer indicates that in the SiOx/Ni/Si structures after annealing no additional emitting centers are introduced to compare with reference one. Time-resolved measurements showed that PL decay rate was decreased from 8.2*10⁴ s⁻¹ for SiOx/Si specimens to 2.86*10⁴ s⁻¹ for SiOx/Ni/Si one. The emission decay rate distribution was determined by fitting the experimental decay curves to the stretchedexponential model. The observed narrow decay rate distribution, decrease of the PL decay rate and enhancement of the PL intensity in SiOx/Ni/Si samples can be assigned to the processes of nickel silicide passivation of the dangling bonds at the interface of Si nanoparticles and the silicon oxide matrix, which is more effective in porous samples. 2014 Article Nickel-induced enhancement of photoluminescence in nc-Si–SiOx nanostructures / K.V. Michailovska, I.Z. Indutnyi, P.E. Shepeliavyi, V.A. Dan'ko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2014. — Т. 17, № 4. — С. 336-340. — Бібліогр.: 24 назв. — англ. 1560-8034 PACS 78.67.Bf, 78.55.Ap http://dspace.nbuv.gov.ua/handle/123456789/118413 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
institution Digital Library of Periodicals of National Academy of Sciences of Ukraine
collection DSpace DC
language English
description The effect of nickel silicide interlayer on the intensity of photoluminescence (PL) from Si nanoclusters (nc) in normally deposited and obliquely deposited in vacuum SiOx/Ni/Si structures have been studied using spectral and time-resolved PL measurements. It has been shown that the intensity of PL band in SiOx/Ni/Si samples is essentially higher than that in reference SiOx/Si samples (without the nickel interlayer) with the same characteristics and treatment. The PL intensity enhancement factor is equal to 5.77 for normally deposited samples and 18 for obliquely deposited samples. The unchanged spectral shape of PL bands and similar position of PL maximum in samples with and without nickel silicide interlayer indicates that in the SiOx/Ni/Si structures after annealing no additional emitting centers are introduced to compare with reference one. Time-resolved measurements showed that PL decay rate was decreased from 8.2*10⁴ s⁻¹ for SiOx/Si specimens to 2.86*10⁴ s⁻¹ for SiOx/Ni/Si one. The emission decay rate distribution was determined by fitting the experimental decay curves to the stretchedexponential model. The observed narrow decay rate distribution, decrease of the PL decay rate and enhancement of the PL intensity in SiOx/Ni/Si samples can be assigned to the processes of nickel silicide passivation of the dangling bonds at the interface of Si nanoparticles and the silicon oxide matrix, which is more effective in porous samples.
format Article
author Michailovska, K.V.
Indutnyi, I.Z.
Shepeliavyi, P.E.
Dan’ko, V.A.
spellingShingle Michailovska, K.V.
Indutnyi, I.Z.
Shepeliavyi, P.E.
Dan’ko, V.A.
Nickel-induced enhancement of photoluminescence in nc-Si–SiOx nanostructures
Semiconductor Physics Quantum Electronics & Optoelectronics
author_facet Michailovska, K.V.
Indutnyi, I.Z.
Shepeliavyi, P.E.
Dan’ko, V.A.
author_sort Michailovska, K.V.
title Nickel-induced enhancement of photoluminescence in nc-Si–SiOx nanostructures
title_short Nickel-induced enhancement of photoluminescence in nc-Si–SiOx nanostructures
title_full Nickel-induced enhancement of photoluminescence in nc-Si–SiOx nanostructures
title_fullStr Nickel-induced enhancement of photoluminescence in nc-Si–SiOx nanostructures
title_full_unstemmed Nickel-induced enhancement of photoluminescence in nc-Si–SiOx nanostructures
title_sort nickel-induced enhancement of photoluminescence in nc-si–siox nanostructures
publisher Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
publishDate 2014
url http://dspace.nbuv.gov.ua/handle/123456789/118413
citation_txt Nickel-induced enhancement of photoluminescence in nc-Si–SiOx nanostructures / K.V. Michailovska, I.Z. Indutnyi, P.E. Shepeliavyi, V.A. Dan'ko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2014. — Т. 17, № 4. — С. 336-340. — Бібліогр.: 24 назв. — англ.
series Semiconductor Physics Quantum Electronics & Optoelectronics
work_keys_str_mv AT michailovskakv nickelinducedenhancementofphotoluminescenceinncsisioxnanostructures
AT indutnyiiz nickelinducedenhancementofphotoluminescenceinncsisioxnanostructures
AT shepeliavyipe nickelinducedenhancementofphotoluminescenceinncsisioxnanostructures
AT dankova nickelinducedenhancementofphotoluminescenceinncsisioxnanostructures
first_indexed 2023-10-18T20:32:05Z
last_indexed 2023-10-18T20:32:05Z
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