Relaxation of photodarkening in SiO-As₂(S,Se)₃ composite layers von Indutnyi, I.Z., Shepeliavyi, P.E., Indutnyi, V.I.

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Fabrication of silicon grating structures using interference lithography and chalcogenide inorganic photoresist von Min’ko, V.I., Shepeliavyi, P.E., Indutnyy, I.Z., Litvin, O.S.

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Nickel-induced enhancement of photoluminescence in nc-Si–SiOx nanostructures von Michailovska, K.V., Indutnyi, I.Z., Shepeliavyi, P.E., Dan’ko, V.A.

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Effect of acetone vapor treatment on photoluminescence of porous nc-Si–SiOx nanostructures von Indutnyi, I.Z., Michailovska, K.V., Min’ko, V.I., Shepeliavyi, P.E.

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Polarization conversion effect in obliquely deposited SiOx films von Sopinskyy, M.V., Indutnyi, I.Z., Michailovska, K.V., Shepeliavyi, P.E., Tkach, V.M.

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Polarization memory of photoluminescence related with Si nanoparticles embedded into oxide matrix von Michailovska, K.V., Indutnyi, I.Z., Kudryavtsev, O.O., Sopinskyy, M.V., Shepeliavyi, P.E.

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Plasmon-enhanced fluorometry based on gold nanostructure arrays. Method and device von Chegel, V.I., Lytvyn, V.K., Lopatynskyi, A.M., Shepeliavyi, P.E., Lytvyn, O.S., Goltvyanskyi, Yu.V.

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The use of chalcogenide glassy semiconductors to create micro- and nanoscale structures von Petrov, V. V., Kryuchуn, A. A., Rubish, V. M., Kostyukevуch, S. A., Shepeliavyi, P. E.

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Using non-organic resist based on As-S-Se chalcogenide glasses for combined optical/digital security devices von Kostyukevych, S.A., Moskalenko, N.L., Shepeliavyi, P.E., Girnyk, V.I., Tverdokhleb, I.V., Ivanovsky, A.A.

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Optical study of thermally induced phase separation in evaporated SiOx films von Indutnyy, I.Z., Lisovskyy, I.P., Mazunov, D.O., Shepeliavyi, P.E., Rudko, G.Yu., Dan'ko, V.A.

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Photostimulated etching of germanium chalcogenide films von Dan’ko, V.A., Indutnyi, I.Z., Myn’ko, V.I., Shepeliavyi, P.E., Lukyanyuk, M.V., Litvin, O.S.

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High-speed optical recording in vitreous chalcogenide thin films von Kryuchyn, A.A., Petrov, V.V., Rubish, V.M., Lapchuk, A.S., Kostyukevych, S.O., Shepeliavyi, P.E., Kostyukevych, K.V.

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Optical recording of information pits in thin layers of chalcogenide semiconductors von Morozovska, A.N., Kostyukevych, S.A., Nikitenko, L.L., Kryuchin, A.A., Kudryavtsev, A.A., Shepeliavyi, P.E., Moskalenko, N.L.

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Effect of low-temperature annealing on light-emitting properties of na-Si/SiOx porous nanocomposite films von Lisovskyy, I.P., Litovchenko, V.G., Zlobin, S.O., Voitovych, M.V., Khatsevich, I.M., Indutnyy, I.Z., Shepeliavyi, P.E., Kolomys, O.F.

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The new approach to identification of film reflecting holographic marks von Kostyukevych, S.O., Muravsky, L.I., Fitio, V.M., Voronyak, T.I., Shepeliavyi, P.E., Kostyukevych, K.V., Moskalenko, N.L., Pogoda, V.I.

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Effect of chemical and radiofrequency plasma treatment on photoluminescence of SiOx films von Indutnyy, I.Z., Lysenko, V.S., Min'ko, V.I., Nazarov, A.N., Tkachenko, A.S., Shepeliavyi, P.E., Dan'ko, V.A., Maidanchuk, I.Yu.

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Enhancing sensitivity of SPR sensors using nanostructured Au chips coated with functional plasma polymer nanofilms von Indutnyi, I.Z., Ushenin, Yu.V., Hegemann, D., Vandenbossche, M., Myn’ko, V.I., Shepeliavyi, P.E., Lukaniuk, M.V., Lytvyn, P.M., Khrystosenko, R.V.

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Electron field emission from SiOx films von Evtukh, А.А., Indutnyy, I.Z., Lisovskyy, I.P., Litvin, Yu.M., Litovchenko, V.G., Lytvyn, P.M., Mazunov, D.O., Rassamakin, Yu.V., Shepeliavyi, P.E.

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Recording the high efficient diffraction gratings by using He-Cd laser von Kostyukevych, S.A., Morozovska, A.N., Minko, V.I., Shepeliavyi, P.E., Kudryavtsev, A.A., Rubish, V.M., Rubish, V.V., Tverdokhleb, I.V., Kostiukevych, A.S., Dyrda, S.V.

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Nanopatterning Au chips for SPR refractometer by using interference lithography and chalcogenide photoresist von Dan’ko, V.A., Dorozinsky, G.V., Indutnyi, I.Z., Myn’ko, V.I., Ushenin, Yu.V., Shepeliavyi, P.E., Lukaniuk, M.V., Korchovyi, A.A., Khrystosenko, R.V.

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