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Relaxation of photodarkening in SiO-As₂(S,Se)₃ composite layers by Indutnyi, I.Z., Shepeliavyi, P.E., Indutnyi, V.I.

Published in Semiconductor Physics Quantum Electronics & Optoelectronics (1999)

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Fabrication of silicon grating structures using interference lithography and chalcogenide inorganic photoresist by Min’ko, V.I., Shepeliavyi, P.E., Indutnyy, I.Z., Litvin, O.S.

Published in Semiconductor Physics Quantum Electronics & Optoelectronics (2007)

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Nickel-induced enhancement of photo-luminescence in nc-Si-SiOx nanostructures by Michailovska, K.V., Indutnyi, I.Z., Shepeliavyi, P.E., Danko, V.A.

Published 2014

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Image formation properties of As₄₀S₂₀Se₄₀ thin layers in application for gratings fabrication by Stronski, A.V., Vlcek, M., Shepeliavyi, P.E., Sklenar, A., Kostyukevich, S.A.

Published in Semiconductor Physics Quantum Electronics & Optoelectronics (1999)

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Nickel-induced enhancement of photoluminescence in nc-Si–SiOx nanostructures by Michailovska, K.V., Indutnyi, I.Z., Shepeliavyi, P.E., Dan’ko, V.A.

Published in Semiconductor Physics Quantum Electronics & Optoelectronics (2014)

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Effect of acetone vapor treatment on photoluminescence of porous nc-Si–SiOx nanostructures by Indutnyi, I.Z., Michailovska, K.V., Min’ko, V.I., Shepeliavyi, P.E.

Published in Semiconductor Physics Quantum Electronics & Optoelectronics (2009)

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Raman spectra of Ag- and Cu- photodoped chalcogenide films by Stronski, A.V., Vlcek, M., Stetsun, A.I., Sklenar, A., Shepeliavyi, P.E.

Published in Semiconductor Physics Quantum Electronics & Optoelectronics (1999)

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Investigation of synthesis peculiarities inherent to computer-generated rainbow holograms of 3D images by Girnyk, V.I., Kostyukevich, S.A., Shepeliavyi, P.E., Kononov, A.V., Borisov, I.S.

Published in Semiconductor Physics Quantum Electronics & Optoelectronics (2002)

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Polarization conversion effect in obliquely deposited SiOx films by Sopinskyy, M.V., Indutnyi, I.Z., Michailovska, K.V., Shepeliavyi, P.E., Tkach, V.M.

Published in Semiconductor Physics Quantum Electronics & Optoelectronics (2011)

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Polarization memory of photoluminescence related with Si nanoparticles embedded into oxide matrix by Michailovska, K.V., Indutnyi, I.Z., Kudryavtsev, O.O., Sopinskyy, M.V., Shepeliavyi, P.E.

Published in Semiconductor Physics Quantum Electronics & Optoelectronics (2015)

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Polarization memory of the luminescence related with Si nanoparticles embedded into oxide matrix by Michailovska, K.V., Indutnyi, I.Z., Kudryavtsev, O.O., Sopinskyy, M.V., Shepeliavyi, P.E.

Published 2015

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Paramagnetic defects related to photoluminescence in SiOx films by Rudko, G.Yu., Vorona, I.P., Indutnyy, I.Z., Ishchenko, S.S., Shepeliavyi, P.E., Yukhymchuk, V.O.

Published in Semiconductor Physics Quantum Electronics & Optoelectronics (2004)

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Plasmon-enhanced fluorometry based on gold nanostructure arrays. Method and device by Chegel, V.I., Lytvyn, V.K., Lopatynskyi, A.M., Shepeliavyi, P.E., Lytvyn, O.S., Goltvyanskyi, Yu.V.

Published in Semiconductor Physics Quantum Electronics & Optoelectronics (2015)

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Plasmon-enhanced fluorometry based on gold nanostructure arrays. Method and device by Chegel, V.I., Lytvyn, V.K., Lopatynskyi, A.M., Shepeliavyi, P.E., Lytvyn, O.S., Goltvyanskyi, Y.V.

Published 2015

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High-speed optical recording in vitreous chalcogenide thin films by Kryuchyn, A.A., Petrov, V.V., Rubish, V.M., Lapchuk, A.S., Kostyukevych, S.O., Shepeliavyi, P.E.

Published 2014

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Photostimulated etching of germanium chalcogenide films by Danko, V.A., Indutnyi, I.Z., Mynko, V.I., Shepeliavyi, P.E., Lukyanyuk, M.V., Litvin, O.S.

Published 2012

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Using non-organic resist based on As-S-Se chalcogenide glasses for combined optical/digital security devices by Kostyukevych, S.A., Moskalenko, N.L., Shepeliavyi, P.E., Girnyk, V.I., Tverdokhleb, I.V., Ivanovsky, A.A.

Published in Semiconductor Physics Quantum Electronics & Optoelectronics (2001)

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The use of chalcogenide glassy semiconductors to create micro- and nanoscale structures by Petrov, V.V., Kryuchуn, A.A., Rubish, V.M., Kostyukevуch, S.A., Shepeliavyi, P.E.

Published 2020

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Recording of high efficiency diffraction gratings by He-Ne laser by Min'ko, V.I., Shepeliavyi, P.E., Dan'ko, V.A., Romanenko, P.F., Litvin, O.S., Indutnyy, I.Z.

Published in Semiconductor Physics Quantum Electronics & Optoelectronics (2004)

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Optical study of thermally induced phase separation in evaporated SiOx films by Indutnyy, I.Z., Lisovskyy, I.P., Mazunov, D.O., Shepeliavyi, P.E., Rudko, G.Yu., Dan'ko, V.A.

Published in Semiconductor Physics Quantum Electronics & Optoelectronics (2004)

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Search Results - Shepeliavyi, P.E.

Relaxation of photodarkening in SiO-As₂(S,Se)₃ composite layers by Indutnyi, I.Z., Shepeliavyi, P.E., Indutnyi, V.I.

Fabrication of silicon grating structures using interference lithography and chalcogenide inorganic photoresist by Min’ko, V.I., Shepeliavyi, P.E., Indutnyy, I.Z., Litvin, O.S.

Nickel-induced enhancement of photo-luminescence in nc-Si-SiOx nanostructures by Michailovska, K.V., Indutnyi, I.Z., Shepeliavyi, P.E., Danko, V.A.

Image formation properties of As₄₀S₂₀Se₄₀ thin layers in application for gratings fabrication by Stronski, A.V., Vlcek, M., Shepeliavyi, P.E., Sklenar, A., Kostyukevich, S.A.

Nickel-induced enhancement of photoluminescence in nc-Si–SiOx nanostructures by Michailovska, K.V., Indutnyi, I.Z., Shepeliavyi, P.E., Dan’ko, V.A.

Effect of acetone vapor treatment on photoluminescence of porous nc-Si–SiOx nanostructures by Indutnyi, I.Z., Michailovska, K.V., Min’ko, V.I., Shepeliavyi, P.E.

Raman spectra of Ag- and Cu- photodoped chalcogenide films by Stronski, A.V., Vlcek, M., Stetsun, A.I., Sklenar, A., Shepeliavyi, P.E.

Investigation of synthesis peculiarities inherent to computer-generated rainbow holograms of 3D images by Girnyk, V.I., Kostyukevich, S.A., Shepeliavyi, P.E., Kononov, A.V., Borisov, I.S.

Polarization conversion effect in obliquely deposited SiOx films by Sopinskyy, M.V., Indutnyi, I.Z., Michailovska, K.V., Shepeliavyi, P.E., Tkach, V.M.

Polarization memory of photoluminescence related with Si nanoparticles embedded into oxide matrix by Michailovska, K.V., Indutnyi, I.Z., Kudryavtsev, O.O., Sopinskyy, M.V., Shepeliavyi, P.E.

Polarization memory of the luminescence related with Si nanoparticles embedded into oxide matrix by Michailovska, K.V., Indutnyi, I.Z., Kudryavtsev, O.O., Sopinskyy, M.V., Shepeliavyi, P.E.

Paramagnetic defects related to photoluminescence in SiOx films by Rudko, G.Yu., Vorona, I.P., Indutnyy, I.Z., Ishchenko, S.S., Shepeliavyi, P.E., Yukhymchuk, V.O.

Plasmon-enhanced fluorometry based on gold nanostructure arrays. Method and device by Chegel, V.I., Lytvyn, V.K., Lopatynskyi, A.M., Shepeliavyi, P.E., Lytvyn, O.S., Goltvyanskyi, Yu.V.

Plasmon-enhanced fluorometry based on gold nanostructure arrays. Method and device by Chegel, V.I., Lytvyn, V.K., Lopatynskyi, A.M., Shepeliavyi, P.E., Lytvyn, O.S., Goltvyanskyi, Y.V.

High-speed optical recording in vitreous chalcogenide thin films by Kryuchyn, A.A., Petrov, V.V., Rubish, V.M., Lapchuk, A.S., Kostyukevych, S.O., Shepeliavyi, P.E.

Photostimulated etching of germanium chalcogenide films by Danko, V.A., Indutnyi, I.Z., Mynko, V.I., Shepeliavyi, P.E., Lukyanyuk, M.V., Litvin, O.S.

Using non-organic resist based on As-S-Se chalcogenide glasses for combined optical/digital security devices by Kostyukevych, S.A., Moskalenko, N.L., Shepeliavyi, P.E., Girnyk, V.I., Tverdokhleb, I.V., Ivanovsky, A.A.

The use of chalcogenide glassy semiconductors to create micro- and nanoscale structures by Petrov, V.V., Kryuchуn, A.A., Rubish, V.M., Kostyukevуch, S.A., Shepeliavyi, P.E.

Recording of high efficiency diffraction gratings by He-Ne laser by Min'ko, V.I., Shepeliavyi, P.E., Dan'ko, V.A., Romanenko, P.F., Litvin, O.S., Indutnyy, I.Z.

Optical study of thermally induced phase separation in evaporated SiOx films by Indutnyy, I.Z., Lisovskyy, I.P., Mazunov, D.O., Shepeliavyi, P.E., Rudko, G.Yu., Dan'ko, V.A.

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