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Relaxation of photodarkening in SiO-As₂(S,Se)₃ composite layers by Indutnyi, I.Z., Shepeliavyi, P.E., Indutnyi, V.I.

Published in Semiconductor Physics Quantum Electronics & Optoelectronics (1999)

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Fabrication of silicon grating structures using interference lithography and chalcogenide inorganic photoresist by Min’ko, V.I., Shepeliavyi, P.E., Indutnyy, I.Z., Litvin, O.S.

Published in Semiconductor Physics Quantum Electronics & Optoelectronics (2007)

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Nickel-induced enhancement of photoluminescence in nc-Si–SiOx nanostructures by Michailovska, K.V., Indutnyi, I.Z., Shepeliavyi, P.E., Dan’ko, V.A.

Published in Semiconductor Physics Quantum Electronics & Optoelectronics (2014)

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Effect of acetone vapor treatment on photoluminescence of porous nc-Si–SiOx nanostructures by Indutnyi, I.Z., Michailovska, K.V., Min’ko, V.I., Shepeliavyi, P.E.

Published in Semiconductor Physics Quantum Electronics & Optoelectronics (2009)

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Polarization conversion effect in obliquely deposited SiOx films by Sopinskyy, M.V., Indutnyi, I.Z., Michailovska, K.V., Shepeliavyi, P.E., Tkach, V.M.

Published in Semiconductor Physics Quantum Electronics & Optoelectronics (2011)

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Polarization memory of photoluminescence related with Si nanoparticles embedded into oxide matrix by Michailovska, K.V., Indutnyi, I.Z., Kudryavtsev, O.O., Sopinskyy, M.V., Shepeliavyi, P.E.

Published in Semiconductor Physics Quantum Electronics & Optoelectronics (2015)

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Plasmon-enhanced fluorometry based on gold nanostructure arrays. Method and device by Chegel, V.I., Lytvyn, V.K., Lopatynskyi, A.M., Shepeliavyi, P.E., Lytvyn, O.S., Goltvyanskyi, Yu.V.

Published in Semiconductor Physics Quantum Electronics & Optoelectronics (2015)

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The use of chalcogenide glassy semiconductors to create micro- and nanoscale structures by Petrov, V. V., Kryuchуn, A. A., Rubish, V. M., Kostyukevуch, S. A., Shepeliavyi, P. E.

Published 2020

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Using non-organic resist based on As-S-Se chalcogenide glasses for combined optical/digital security devices by Kostyukevych, S.A., Moskalenko, N.L., Shepeliavyi, P.E., Girnyk, V.I., Tverdokhleb, I.V., Ivanovsky, A.A.

Published in Semiconductor Physics Quantum Electronics & Optoelectronics (2001)

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Optical study of thermally induced phase separation in evaporated SiOx films by Indutnyy, I.Z., Lisovskyy, I.P., Mazunov, D.O., Shepeliavyi, P.E., Rudko, G.Yu., Dan'ko, V.A.

Published in Semiconductor Physics Quantum Electronics & Optoelectronics (2004)

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Photostimulated etching of germanium chalcogenide films by Dan’ko, V.A., Indutnyi, I.Z., Myn’ko, V.I., Shepeliavyi, P.E., Lukyanyuk, M.V., Litvin, O.S.

Published in Semiconductor Physics Quantum Electronics & Optoelectronics (2012)

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High-speed optical recording in vitreous chalcogenide thin films by Kryuchyn, A.A., Petrov, V.V., Rubish, V.M., Lapchuk, A.S., Kostyukevych, S.O., Shepeliavyi, P.E., Kostyukevych, K.V.

Published in Semiconductor Physics Quantum Electronics & Optoelectronics (2014)

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Optical recording of information pits in thin layers of chalcogenide semiconductors by Morozovska, A.N., Kostyukevych, S.A., Nikitenko, L.L., Kryuchin, A.A., Kudryavtsev, A.A., Shepeliavyi, P.E., Moskalenko, N.L.

Published in Semiconductor Physics Quantum Electronics & Optoelectronics (2004)

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Effect of low-temperature annealing on light-emitting properties of na-Si/SiOx porous nanocomposite films by Lisovskyy, I.P., Litovchenko, V.G., Zlobin, S.O., Voitovych, M.V., Khatsevich, I.M., Indutnyy, I.Z., Shepeliavyi, P.E., Kolomys, O.F.

Published in Semiconductor Physics Quantum Electronics & Optoelectronics (2011)

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The new approach to identification of film reflecting holographic marks by Kostyukevych, S.O., Muravsky, L.I., Fitio, V.M., Voronyak, T.I., Shepeliavyi, P.E., Kostyukevych, K.V., Moskalenko, N.L., Pogoda, V.I.

Published in Semiconductor Physics Quantum Electronics & Optoelectronics (2011)

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Effect of chemical and radiofrequency plasma treatment on photoluminescence of SiOx films by Indutnyy, I.Z., Lysenko, V.S., Min'ko, V.I., Nazarov, A.N., Tkachenko, A.S., Shepeliavyi, P.E., Dan'ko, V.A., Maidanchuk, I.Yu.

Published in Semiconductor Physics Quantum Electronics & Optoelectronics (2006)

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Enhancing sensitivity of SPR sensors using nanostructured Au chips coated with functional plasma polymer nanofilms by Indutnyi, I.Z., Ushenin, Yu.V., Hegemann, D., Vandenbossche, M., Myn’ko, V.I., Shepeliavyi, P.E., Lukaniuk, M.V., Lytvyn, P.M., Khrystosenko, R.V.

Published in Semiconductor Physics Quantum Electronics & Optoelectronics (2017)

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18

Electron field emission from SiOx films by Evtukh, А.А., Indutnyy, I.Z., Lisovskyy, I.P., Litvin, Yu.M., Litovchenko, V.G., Lytvyn, P.M., Mazunov, D.O., Rassamakin, Yu.V., Shepeliavyi, P.E.

Published in Semiconductor Physics Quantum Electronics & Optoelectronics (2003)

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19

Recording the high efficient diffraction gratings by using He-Cd laser by Kostyukevych, S.A., Morozovska, A.N., Minko, V.I., Shepeliavyi, P.E., Kudryavtsev, A.A., Rubish, V.M., Rubish, V.V., Tverdokhleb, I.V., Kostiukevych, A.S., Dyrda, S.V.

Published in Semiconductor Physics Quantum Electronics & Optoelectronics (2004)

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20

Nanopatterning Au chips for SPR refractometer by using interference lithography and chalcogenide photoresist by Dan’ko, V.A., Dorozinsky, G.V., Indutnyi, I.Z., Myn’ko, V.I., Ushenin, Yu.V., Shepeliavyi, P.E., Lukaniuk, M.V., Korchovyi, A.A., Khrystosenko, R.V.

Published in Semiconductor Physics Quantum Electronics & Optoelectronics (2015)

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Search Results - Shepeliavyi, P.E.

Relaxation of photodarkening in SiO-As₂(S,Se)₃ composite layers by Indutnyi, I.Z., Shepeliavyi, P.E., Indutnyi, V.I.

Fabrication of silicon grating structures using interference lithography and chalcogenide inorganic photoresist by Min’ko, V.I., Shepeliavyi, P.E., Indutnyy, I.Z., Litvin, O.S.

Nickel-induced enhancement of photoluminescence in nc-Si–SiOx nanostructures by Michailovska, K.V., Indutnyi, I.Z., Shepeliavyi, P.E., Dan’ko, V.A.

Effect of acetone vapor treatment on photoluminescence of porous nc-Si–SiOx nanostructures by Indutnyi, I.Z., Michailovska, K.V., Min’ko, V.I., Shepeliavyi, P.E.

Polarization conversion effect in obliquely deposited SiOx films by Sopinskyy, M.V., Indutnyi, I.Z., Michailovska, K.V., Shepeliavyi, P.E., Tkach, V.M.

Polarization memory of photoluminescence related with Si nanoparticles embedded into oxide matrix by Michailovska, K.V., Indutnyi, I.Z., Kudryavtsev, O.O., Sopinskyy, M.V., Shepeliavyi, P.E.

Plasmon-enhanced fluorometry based on gold nanostructure arrays. Method and device by Chegel, V.I., Lytvyn, V.K., Lopatynskyi, A.M., Shepeliavyi, P.E., Lytvyn, O.S., Goltvyanskyi, Yu.V.

The use of chalcogenide glassy semiconductors to create micro- and nanoscale structures by Petrov, V. V., Kryuchуn, A. A., Rubish, V. M., Kostyukevуch, S. A., Shepeliavyi, P. E.

Using non-organic resist based on As-S-Se chalcogenide glasses for combined optical/digital security devices by Kostyukevych, S.A., Moskalenko, N.L., Shepeliavyi, P.E., Girnyk, V.I., Tverdokhleb, I.V., Ivanovsky, A.A.

Optical study of thermally induced phase separation in evaporated SiOx films by Indutnyy, I.Z., Lisovskyy, I.P., Mazunov, D.O., Shepeliavyi, P.E., Rudko, G.Yu., Dan'ko, V.A.

Photostimulated etching of germanium chalcogenide films by Dan’ko, V.A., Indutnyi, I.Z., Myn’ko, V.I., Shepeliavyi, P.E., Lukyanyuk, M.V., Litvin, O.S.

High-speed optical recording in vitreous chalcogenide thin films by Kryuchyn, A.A., Petrov, V.V., Rubish, V.M., Lapchuk, A.S., Kostyukevych, S.O., Shepeliavyi, P.E., Kostyukevych, K.V.

Optical recording of information pits in thin layers of chalcogenide semiconductors by Morozovska, A.N., Kostyukevych, S.A., Nikitenko, L.L., Kryuchin, A.A., Kudryavtsev, A.A., Shepeliavyi, P.E., Moskalenko, N.L.

Effect of low-temperature annealing on light-emitting properties of na-Si/SiOx porous nanocomposite films by Lisovskyy, I.P., Litovchenko, V.G., Zlobin, S.O., Voitovych, M.V., Khatsevich, I.M., Indutnyy, I.Z., Shepeliavyi, P.E., Kolomys, O.F.

The new approach to identification of film reflecting holographic marks by Kostyukevych, S.O., Muravsky, L.I., Fitio, V.M., Voronyak, T.I., Shepeliavyi, P.E., Kostyukevych, K.V., Moskalenko, N.L., Pogoda, V.I.

Effect of chemical and radiofrequency plasma treatment on photoluminescence of SiOx films by Indutnyy, I.Z., Lysenko, V.S., Min'ko, V.I., Nazarov, A.N., Tkachenko, A.S., Shepeliavyi, P.E., Dan'ko, V.A., Maidanchuk, I.Yu.

Enhancing sensitivity of SPR sensors using nanostructured Au chips coated with functional plasma polymer nanofilms by Indutnyi, I.Z., Ushenin, Yu.V., Hegemann, D., Vandenbossche, M., Myn’ko, V.I., Shepeliavyi, P.E., Lukaniuk, M.V., Lytvyn, P.M., Khrystosenko, R.V.

Electron field emission from SiOx films by Evtukh, А.А., Indutnyy, I.Z., Lisovskyy, I.P., Litvin, Yu.M., Litovchenko, V.G., Lytvyn, P.M., Mazunov, D.O., Rassamakin, Yu.V., Shepeliavyi, P.E.

Recording the high efficient diffraction gratings by using He-Cd laser by Kostyukevych, S.A., Morozovska, A.N., Minko, V.I., Shepeliavyi, P.E., Kudryavtsev, A.A., Rubish, V.M., Rubish, V.V., Tverdokhleb, I.V., Kostiukevych, A.S., Dyrda, S.V.

Nanopatterning Au chips for SPR refractometer by using interference lithography and chalcogenide photoresist by Dan’ko, V.A., Dorozinsky, G.V., Indutnyi, I.Z., Myn’ko, V.I., Ushenin, Yu.V., Shepeliavyi, P.E., Lukaniuk, M.V., Korchovyi, A.A., Khrystosenko, R.V.

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