Determination of the Schottky barrier height in diodes based on Au–TiB₂–n-SiC 6H from the current-voltage and capacitance-voltage characteristics
We present the results of investigation of the barrier height and ideality factor in Schottky barrier diodes based on Au–TiB₂–n-SiC 6H relying on measuring the current-voltage and capacitance-voltage characteristics. Improving the accuracy of the methods that take into account the effect of the s...
Збережено в:
| Дата: | 2014 |
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| Автори: | , , , , |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2014
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| Назва видання: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/118424 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Determination of the Schottky barrier height in diodes based on Au–TiB₂–n-SiC 6H from the current-voltage and capacitance-voltage characteristics / Ya.Ya. Kudryk, V.V. Shynkarenko, V.S. Slipokurov, R.I. Bigun, R.Ya. Kudryk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2014. — Т. 17, № 4. — С. 398-402. — Бібліогр.: 22 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
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irk-123456789-1184242017-05-31T03:05:18Z Determination of the Schottky barrier height in diodes based on Au–TiB₂–n-SiC 6H from the current-voltage and capacitance-voltage characteristics Kudryk, Ya.Ya. Shynkarenko, V.V. Slipokurov, V.S. Bigun, R.I. Kudryk, R.Ya. We present the results of investigation of the barrier height and ideality factor in Schottky barrier diodes based on Au–TiB₂–n-SiC 6H relying on measuring the current-voltage and capacitance-voltage characteristics. Improving the accuracy of the methods that take into account the effect of the series resistance in calculating the ideality factor and barrier height has been shown with the Cheung method and direct approximation one. It has been ascertained that an inconsistency between real currentvoltage characteristics and its model – the temperature dependence of the barrier height, the ideality factor dependence on the voltage – introduces the basic error into the calculated parameters in the diode under study. 2014 Article Determination of the Schottky barrier height in diodes based on Au–TiB₂–n-SiC 6H from the current-voltage and capacitance-voltage characteristics / Ya.Ya. Kudryk, V.V. Shynkarenko, V.S. Slipokurov, R.I. Bigun, R.Ya. Kudryk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2014. — Т. 17, № 4. — С. 398-402. — Бібліогр.: 22 назв. — англ. 1560-8034 PACS 73.23.+y, 73.40.-c, 85.30.De http://dspace.nbuv.gov.ua/handle/123456789/118424 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| language |
English |
| description |
We present the results of investigation of the barrier height and ideality factor
in Schottky barrier diodes based on Au–TiB₂–n-SiC 6H relying on measuring the
current-voltage and capacitance-voltage characteristics. Improving the accuracy of the
methods that take into account the effect of the series resistance in calculating the ideality
factor and barrier height has been shown with the Cheung method and direct
approximation one. It has been ascertained that an inconsistency between real currentvoltage
characteristics and its model – the temperature dependence of the barrier height,
the ideality factor dependence on the voltage – introduces the basic error into the
calculated parameters in the diode under study. |
| format |
Article |
| author |
Kudryk, Ya.Ya. Shynkarenko, V.V. Slipokurov, V.S. Bigun, R.I. Kudryk, R.Ya. |
| spellingShingle |
Kudryk, Ya.Ya. Shynkarenko, V.V. Slipokurov, V.S. Bigun, R.I. Kudryk, R.Ya. Determination of the Schottky barrier height in diodes based on Au–TiB₂–n-SiC 6H from the current-voltage and capacitance-voltage characteristics Semiconductor Physics Quantum Electronics & Optoelectronics |
| author_facet |
Kudryk, Ya.Ya. Shynkarenko, V.V. Slipokurov, V.S. Bigun, R.I. Kudryk, R.Ya. |
| author_sort |
Kudryk, Ya.Ya. |
| title |
Determination of the Schottky barrier height in diodes based on Au–TiB₂–n-SiC 6H from the current-voltage and capacitance-voltage characteristics |
| title_short |
Determination of the Schottky barrier height in diodes based on Au–TiB₂–n-SiC 6H from the current-voltage and capacitance-voltage characteristics |
| title_full |
Determination of the Schottky barrier height in diodes based on Au–TiB₂–n-SiC 6H from the current-voltage and capacitance-voltage characteristics |
| title_fullStr |
Determination of the Schottky barrier height in diodes based on Au–TiB₂–n-SiC 6H from the current-voltage and capacitance-voltage characteristics |
| title_full_unstemmed |
Determination of the Schottky barrier height in diodes based on Au–TiB₂–n-SiC 6H from the current-voltage and capacitance-voltage characteristics |
| title_sort |
determination of the schottky barrier height in diodes based on au–tib₂–n-sic 6h from the current-voltage and capacitance-voltage characteristics |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| publishDate |
2014 |
| url |
http://dspace.nbuv.gov.ua/handle/123456789/118424 |
| citation_txt |
Determination of the Schottky barrier height in diodes based on Au–TiB₂–n-SiC 6H from the current-voltage and capacitance-voltage characteristics / Ya.Ya. Kudryk, V.V. Shynkarenko, V.S. Slipokurov, R.I. Bigun, R.Ya. Kudryk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2014. — Т. 17, № 4. — С. 398-402. — Бібліогр.: 22 назв. — англ. |
| series |
Semiconductor Physics Quantum Electronics & Optoelectronics |
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