The growth of weakly coupled graphene sheets from silicon carbide powder
A simple method for production of weakly coupled graphene layers by hightemperature sublimation of polycrystalline SiC is presented. The method allows manufacturing carbon-based composite with a high content of weakly coupled graphene layers in large-scale production. The study of the obtained ca...
Збережено в:
| Дата: | 2014 |
|---|---|
| Автори: | , , , , , , |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2014
|
| Назва видання: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/118507 |
| Теги: |
Додати тег
Немає тегів, Будьте першим, хто поставить тег для цього запису!
|
| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | The growth of weakly coupled graphene sheets from silicon carbide powder / V.S. Kiselov, P.M. Lytvyn, A.S. Nikolenko, V.V. Strelchuk, Yu.Yu. Stubrov, M.P. Tryus, A.E. Belyaev // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2014. — Т. 17, № 3. — С. 301-307. — Бібліогр.: 36 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
irk-123456789-118507 |
|---|---|
| record_format |
dspace |
| spelling |
irk-123456789-1185072017-05-31T03:02:58Z The growth of weakly coupled graphene sheets from silicon carbide powder Kiselov, V.S. Lytvyn, P.M. Nikolenko, A.S. Strelchuk, V.V. Stubrov, Yu.Yu. Tryus, M. Belyaev, A.E. A simple method for production of weakly coupled graphene layers by hightemperature sublimation of polycrystalline SiC is presented. The method allows manufacturing carbon-based composite with a high content of weakly coupled graphene layers in large-scale production. The study of the obtained carbon-based material by means of scanning electron microscopy, Raman spectroscopy and atomic force microscopy detected graphene plates with lateral size of up to tens of micrometers. The obtained graphene sheets are shown to have very high crystal perfection, low concentration of defects and weak interlayer coupling, which depends on the growth conditions. The proposed method of producing graphene-based composites is supposed to be very promising due to its relative simplicity and high output. 2014 Article The growth of weakly coupled graphene sheets from silicon carbide powder / V.S. Kiselov, P.M. Lytvyn, A.S. Nikolenko, V.V. Strelchuk, Yu.Yu. Stubrov, M.P. Tryus, A.E. Belyaev // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2014. — Т. 17, № 3. — С. 301-307. — Бібліогр.: 36 назв. — англ. 1560-8034 PACS 61.48.Gh, 68.37.Ps, 68.65.Pq, 78.30.-j, 78.67.Wj, 81.05.ue http://dspace.nbuv.gov.ua/handle/123456789/118507 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| language |
English |
| description |
A simple method for production of weakly coupled graphene layers by hightemperature
sublimation of polycrystalline SiC is presented. The method allows
manufacturing carbon-based composite with a high content of weakly coupled graphene
layers in large-scale production. The study of the obtained carbon-based material by
means of scanning electron microscopy, Raman spectroscopy and atomic force
microscopy detected graphene plates with lateral size of up to tens of micrometers. The
obtained graphene sheets are shown to have very high crystal perfection, low
concentration of defects and weak interlayer coupling, which depends on the growth
conditions. The proposed method of producing graphene-based composites is supposed
to be very promising due to its relative simplicity and high output. |
| format |
Article |
| author |
Kiselov, V.S. Lytvyn, P.M. Nikolenko, A.S. Strelchuk, V.V. Stubrov, Yu.Yu. Tryus, M. Belyaev, A.E. |
| spellingShingle |
Kiselov, V.S. Lytvyn, P.M. Nikolenko, A.S. Strelchuk, V.V. Stubrov, Yu.Yu. Tryus, M. Belyaev, A.E. The growth of weakly coupled graphene sheets from silicon carbide powder Semiconductor Physics Quantum Electronics & Optoelectronics |
| author_facet |
Kiselov, V.S. Lytvyn, P.M. Nikolenko, A.S. Strelchuk, V.V. Stubrov, Yu.Yu. Tryus, M. Belyaev, A.E. |
| author_sort |
Kiselov, V.S. |
| title |
The growth of weakly coupled graphene sheets from silicon carbide powder |
| title_short |
The growth of weakly coupled graphene sheets from silicon carbide powder |
| title_full |
The growth of weakly coupled graphene sheets from silicon carbide powder |
| title_fullStr |
The growth of weakly coupled graphene sheets from silicon carbide powder |
| title_full_unstemmed |
The growth of weakly coupled graphene sheets from silicon carbide powder |
| title_sort |
growth of weakly coupled graphene sheets from silicon carbide powder |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| publishDate |
2014 |
| url |
http://dspace.nbuv.gov.ua/handle/123456789/118507 |
| citation_txt |
The growth of weakly coupled graphene sheets
from silicon carbide powder / V.S. Kiselov, P.M. Lytvyn, A.S. Nikolenko, V.V. Strelchuk, Yu.Yu. Stubrov, M.P. Tryus, A.E. Belyaev // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2014. — Т. 17, № 3. — С. 301-307. — Бібліогр.: 36 назв. — англ. |
| series |
Semiconductor Physics Quantum Electronics & Optoelectronics |
| work_keys_str_mv |
AT kiselovvs thegrowthofweaklycoupledgraphenesheetsfromsiliconcarbidepowder AT lytvynpm thegrowthofweaklycoupledgraphenesheetsfromsiliconcarbidepowder AT nikolenkoas thegrowthofweaklycoupledgraphenesheetsfromsiliconcarbidepowder AT strelchukvv thegrowthofweaklycoupledgraphenesheetsfromsiliconcarbidepowder AT stubrovyuyu thegrowthofweaklycoupledgraphenesheetsfromsiliconcarbidepowder AT tryusm thegrowthofweaklycoupledgraphenesheetsfromsiliconcarbidepowder AT belyaevae thegrowthofweaklycoupledgraphenesheetsfromsiliconcarbidepowder AT kiselovvs growthofweaklycoupledgraphenesheetsfromsiliconcarbidepowder AT lytvynpm growthofweaklycoupledgraphenesheetsfromsiliconcarbidepowder AT nikolenkoas growthofweaklycoupledgraphenesheetsfromsiliconcarbidepowder AT strelchukvv growthofweaklycoupledgraphenesheetsfromsiliconcarbidepowder AT stubrovyuyu growthofweaklycoupledgraphenesheetsfromsiliconcarbidepowder AT tryusm growthofweaklycoupledgraphenesheetsfromsiliconcarbidepowder AT belyaevae growthofweaklycoupledgraphenesheetsfromsiliconcarbidepowder |
| first_indexed |
2023-10-18T20:32:12Z |
| last_indexed |
2023-10-18T20:32:12Z |
| _version_ |
1796150460137078784 |